All MOSFET. 7N60K Datasheet

 

7N60K MOSFET. Datasheet pdf. Equivalent

Type Designator: 7N60K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 90 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.83 Ohm

Package: TO-220_TO-220F_TO-263

7N60K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

7N60K Datasheet (PDF)

1.1. irfp27n60k irfp27n60kpbf.pdf Size:183K _upd-mosfet

7N60K
7N60K

IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ()VGS = 10 V 0.18 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co

1.2. irfp27n60kpbf.pdf Size:615K _international_rectifier

7N60K
7N60K

PD - 95479A SMPS MOSFET IRFP27N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 180m? 27A l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Rugge

 1.3. irfp27n60k.pdf Size:91K _international_rectifier

7N60K
7N60K

PD - 94407 SMPS MOSFET IRFP27N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 180m? 27A High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characteri

1.4. irfb17n60k.pdf Size:486K _international_rectifier

7N60K
7N60K

PD - 95629 IRFB17N60KPbF Lead-Free 8/4/04 Document Number: 91099 www.vishay.com 1 IRFB17N60KPbF Document Number: 91099 www.vishay.com 2 IRFB17N60KPbF Document Number: 91099 www.vishay.com 3 IRFB17N60KPbF Document Number: 91099 www.vishay.com 4 IRFB17N60KPbF Document Number: 91099 www.vishay.com 5 IRFB17N60KPbF Document Number: 91099 www.vishay.com 6 IRFB17N60KPbF Docu

 1.5. irfp27n60k sihfp27n60k.pdf Size:179K _vishay

7N60K
7N60K

IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) (?)VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Configuration

1.6. 7n60k.pdf Size:259K _utc

7N60K
7N60K

UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

Datasheet: 5N65K , 6N65 , 5N60 , 6N60 , 6N60Z , 7N60A , 7N60 , 7N60Z , FDS4435 , 8N60 , 10N60 , 10N60K , 12N60 , 15N60 , 18N60 , 20N60 , 22N60 .

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