7N60K - описание и поиск аналогов

UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicat

PD - 94407 SMPS MOSFET IRFP27N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 180m 27A High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Char

PD - 95479A SMPS MOSFET IRFP27N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 180m 27A l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt

PD - 95629 IRFB17N60KPbF Lead-Free 8/4/04 Document Number 91099 www.vishay.com 1 IRFB17N60KPbF Document Number 91099 www.vishay.com 2 IRFB17N60KPbF Document Number 91099 www.vishay.com 3 IRFB17N60KPbF Document Number 91099 www.vishay.com 4 IRFB17N60KPbF Document Number 91099 www.vishay.com 5 IRFB17N60KPbF Document Number 91099 www.vishay.com 6 IRFB17N60KPbF

IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co

IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Smaller TO-220 Package VDS (V) 600 Available Low Gate Charge Qg Results in Simple Drive RDS(on) ( )VGS = 10 V 0.35 RoHS* Requirement Qg (Max.) (nC) 99 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 32 Ruggedness Qgd (nC) 47 Fully Characterized Capacitance and Avalanc

IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co

SW7N60K N-channel Enhanced mode TO-220F/TO-251MOSFET Features TO-220F TO-251 BVDSS 600V High ruggedness ID 7A Low RDS(ON) (Typ 0.5 )@VGS=10V RDS(ON) 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Adaptor LED 3 3 3 1. Gate 2. Drain 3. Source 1 General Descr

SW47N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS 600V TO-247 ID 47A High ruggedness Low RDS(ON) (Typ 56m )@VGS=10V RDS(ON) 56m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

SW7N60K2F N-channel Enhanced mode TO-252 MOSFET TO-252 BVDSS 600V Features ID 7A High ruggedness RDS(ON) 0.43 Low RDS(ON) (Typ 0.43 )@VGS=10V Low Gate Charge (Typ 13nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Adaptor, Charger 1. Gate 2. Drain 3. Source 3 General Description This pow

CSFR7N60F, CSFR7N60K, nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR7N60D,CSFR7N60U 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC) Device Marking and Package

HM7N60K / HM7N60I HM7N60K / HM7N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin

iscN-Channel MOSFET Transistor IRFP27N60K FEATURES Low drain-source on-resistance RDS(ON) =0.22 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL