1N60P MOSFET. Datasheet pdf. Equivalent
Type Designator: 1N60P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 1.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 9.3 Ohm
Package: TO-92
1N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
1N60P Datasheet (PDF)
1.1. pht1n60p.pdf 
Size:26K _philips2
Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 600 V mounting featuring high avalanche ID Drain current (DC) 0.53 A energy capability, stable blocking Ptot Total power d
1.2. 1n60p.pdf Size:269K _utc
UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of pow
1.3. ap01n60p.pdf Size:60K _a-power
AP01N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Dynamic dv/dt Rating BVDSS 600V Ў Repetitive Avalanche Rated RDS(ON) 8? Ў Fast Switching ID 1.6A Ў Simple Drive Requirement G D TO-220 S Ў RoHS Compliant Description D The TO-220 package is universally preferred for all commercial- industrial applications. The device is s
1.4. ftk1n60p f d i.pdf Size:288K _first_silicon
SEMICONDUCTOR FTK1N60P / F / D / I TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts I : N-CHANNEL MOSFET 1 TO - 251 D : 1 DESCRIPTION TO - 252 The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P : charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu
Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .
