1N60P Datasheet. Specs and Replacement

Type Designator: 1N60P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm

Package: TO-92

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1N60P datasheet

 ..1. Size:269K  utc
 1n60p.pdf pdf_icon

1N60P

UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of ... See More ⇒

 0.1. Size:26K  philips
 pht1n60p.pdf pdf_icon

1N60P

Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 600 V mounting featuring high avalanche ID Drain current (DC) 0.53 A energy capability, stable blocking Ptot Total powe... See More ⇒

 0.2. Size:60K  ape
 ap01n60p.pdf pdf_icon

1N60P

AP01N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement G D TO-220 S RoHS Compliant Description D The TO-220 package is universally preferred for all commercial- industrial applications. The de... See More ⇒

 0.3. Size:288K  first silicon
 ftk1n60p f d i.pdf pdf_icon

1N60P

SEMICONDUCTOR FTK1N60P / F / D / I TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts I N-CHANNEL MOSFET 1 TO - 251 D 1 DESCRIPTION TO - 252 The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu... See More ⇒

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Detailed specifications: 15N60, 18N60, 20N60, 22N60, UF601, UK2996, 1N60A, 1N60, IRF840, 1N60Z, 2N60L, 2N60, 2N60K, 3N60, 3N60A, 3N60Z, 3N60K

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.