All MOSFET. 1N60P Datasheet

 

1N60P Datasheet and Replacement


   Type Designator: 1N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
   Package: TO-92
 

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1N60P Datasheet (PDF)

 ..1. Size:269K  utc
1n60p.pdf pdf_icon

1N60P

UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of

 0.1. Size:26K  philips
pht1n60p.pdf pdf_icon

1N60P

Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 600 Vmounting featuring high avalanche ID Drain current (DC) 0.53 Aenergy capability, stable blocking Ptot Total powe

 0.2. Size:60K  ape
ap01n60p.pdf pdf_icon

1N60P

AP01N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement GDTO-220S RoHS CompliantDescriptionDThe TO-220 package is universally preferred for all commercial-industrial applications. The de

 0.3. Size:288K  first silicon
ftk1n60p f d i.pdf pdf_icon

1N60P

SEMICONDUCTORFTK1N60P / F / D / ITECHNICAL DATAPower MOSFET1.0 Amps, 600 VoltsI :N-CHANNEL MOSFET 1TO - 251D :1DESCRIPTIONTO - 252The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P :charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu

Datasheet: 15N60 , 18N60 , 20N60 , 22N60 , UF601 , UK2996 , 1N60A , 1N60 , IRF840 , 1N60Z , 2N60L , 2N60 , 2N60K , 3N60 , 3N60A , 3N60Z , 3N60K .

History: KDB6030L | IXFH6N100 | NTD4960N | CPH6445

Keywords - 1N60P MOSFET datasheet

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