All MOSFET. 1N60P Datasheet

 

1N60P MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N60P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 9.3 Ohm

Package: TO-92

1N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N60P Datasheet (PDF)

1.1. pht1n60p.pdf Size:26K _philips2

1N60P
1N60P

Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 600 V mounting featuring high avalanche ID Drain current (DC) 0.53 A energy capability, stable blocking Ptot Total power d

1.2. 1n60p.pdf Size:269K _utc

1N60P
1N60P

UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of pow

 1.3. ap01n60p.pdf Size:60K _a-power

1N60P
1N60P

AP01N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Dynamic dv/dt Rating BVDSS 600V Ў Repetitive Avalanche Rated RDS(ON) 8? Ў Fast Switching ID 1.6A Ў Simple Drive Requirement G D TO-220 S Ў RoHS Compliant Description D The TO-220 package is universally preferred for all commercial- industrial applications. The device is s

1.4. ftk1n60p f d i.pdf Size:288K _first_silicon

1N60P
1N60P

SEMICONDUCTOR FTK1N60P / F / D / I TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts I : N-CHANNEL MOSFET 1 TO - 251 D : 1 DESCRIPTION TO - 252 The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P : charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

 
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