All MOSFET. 1N60P Datasheet

 

1N60P MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N60P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 9.3 Ohm

Package: TO-92

1N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N60P Datasheet (PDF)

1.1. pht1n60p.pdf Size:26K _philips2

1N60P
1N60P

Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 600 V mounting featuring high avalanche ID Drain current (DC) 0.53 A energy capability, stable blocking Ptot Total power d

1.2. 1n60p.pdf Size:269K _utc

1N60P
1N60P

UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of pow

 1.3. ap01n60p.pdf Size:60K _a-power

1N60P
1N60P

AP01N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Dynamic dv/dt Rating BVDSS 600V Ў Repetitive Avalanche Rated RDS(ON) 8? Ў Fast Switching ID 1.6A Ў Simple Drive Requirement G D TO-220 S Ў RoHS Compliant Description D The TO-220 package is universally preferred for all commercial- industrial applications. The device is s

1.4. ftk1n60p f d i.pdf Size:288K _first_silicon

1N60P
1N60P

SEMICONDUCTOR FTK1N60P / F / D / I TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts I : N-CHANNEL MOSFET 1 TO - 251 D : 1 DESCRIPTION TO - 252 The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P : charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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