1N60P - Даташиты. Аналоги. Основные параметры

UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of

Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 600 Vmounting featuring high avalanche ID Drain current (DC) 0.53 Aenergy capability, stable blocking Ptot Total powe

AP01N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement GDTO-220S RoHS CompliantDescriptionDThe TO-220 package is universally preferred for all commercial-industrial applications. The de

SEMICONDUCTORFTK1N60P / F / D / ITECHNICAL DATAPower MOSFET1.0 Amps, 600 VoltsI :N-CHANNEL MOSFET 1TO - 251D :1DESCRIPTIONTO - 252The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P :charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu

Silicon N-Channel Power MOSFET HM1N60 General Description VDSS 600 VHM1N60PR, the silicon N-channel EnhancedID 1.0 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circu