All MOSFET. 3N60K Datasheet

 

3N60K MOSFET. Datasheet pdf. Equivalent


   Type Designator: 3N60K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-252 TO-220F

 3N60K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3N60K Datasheet (PDF)

 ..1. Size:377K  utc
 3n60k.pdf

3N60K 3N60K

UNISONIC TECHNOLOGIES CO., LTD 3N60K Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

 0.1. Size:878K  samwin
 swf13n60k2 swi13n60k2 swd13n60k2.pdf

3N60K 3N60K

SW13N60K2 N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET BVDSS : 600V Features TO-220F TO-251 TO-252 ID : 13A High ruggedness RDS(ON) : 0.24 Low RDS(ON) (Typ 0.24)@VGS=10V Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED, Charger, Adaptor 1. Gate 2. Drain 3

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HY3208PM | FRS440R

 

 
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