3N60K Specs and Replacement
Type Designator: 3N60K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
3N60K substitution
- MOSFET ⓘ Cross-Reference Search
3N60K datasheet
3n60k.pdf
UNISONIC TECHNOLOGIES CO., LTD 3N60K Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ... See More ⇒
swf13n60k2 swi13n60k2 swd13n60k2.pdf
SW13N60K2 N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET BVDSS 600V Features TO-220F TO-251 TO-252 ID 13A High ruggedness RDS(ON) 0.24 Low RDS(ON) (Typ 0.24 )@VGS=10V Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED, Charger, Adaptor 1. Gate 2. Drain 3... See More ⇒
Detailed specifications: 1N60P , 1N60Z , 2N60L , 2N60 , 2N60K , 3N60 , 3N60A , 3N60Z , IRF1404 , 4N60 , 4N60Z , 4N60K , 8N50H , 9N50 , 10N50 , 11N50 , 12N50 .
Keywords - 3N60K MOSFET specs
3N60K cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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