All MOSFET. 4N60 Datasheet

 

4N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 106 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 4 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 80 nC
   Rise Time (tr): 80 nS
   Drain-Source Capacitance (Cd): 80 pF
   Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm
   Package: TO-263 TO-262 TO-251 TO-252 TO-220 TO-220F DFN-8

 4N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

4N60 Datasheet (PDF)

 ..1. Size:384K  utc
4n60.pdf

4N60 4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

 ..2. Size:2598K  goford
4n60 4n60f.pdf

4N60 4N60

GOFORD4N60/4N60F600V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS technology.600V 2.5 4AThis latest technology has been especiallydesigned to minimize on-state resistance,Have a high rugged avalanchecharacteristics.These devices are well suitedfor high efficiency switched mode powersupplies, active p

 ..3. Size:229K  inchange semiconductor
4n60.pdf

4N60 4N60

isc N-Channel MOSFET Transistor 4N60DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 60

 ..4. Size:934K  chongqing pingwei
4n60 4n60f 4n60b 4n60h 4n60g 4n60d.pdf

4N60 4N60

 0.1. Size:217K  1
ssi4n60a ssw4n60a.pdf

4N60 4N60

 0.2. Size:224K  1
4n60cb.pdf

4N60 4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60-CB Power MOSFET 4.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 0.3. Size:801K  1
svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf

4N60 4N60

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc

 0.4. Size:1019K  1
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf

4N60 4N60

N RN-CHANNEL MOSFETJCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS RdsonVgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 0.5. Size:291K  1
ndf04n60z ndd04n60z.pdf

4N60 4N60

NDF04N60Z, NDD04N60ZPower MOSFET, N-Channel, 600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParam

 0.6. Size:268K  1
spd04n60s5 spu04n60s5.pdf

4N60 4N60

SPU04N60S5SPD04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO252. P-TO251. Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking04N60S5SPU04N60S5 P-T

 0.7. Size:148K  1
ndf04n60z ndp04n60z ndd04n60z.pdf

4N60 4N60

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET1.8 W, 600 VoltsFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant600 V1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts4ABSOLUTE MAXIMUM RATINGS

 0.8. Size:1358K  1
dg4n60.pdf

4N60 4N60

DG4N60V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N60N

 0.10. Size:124K  motorola
mgp4n60erev0.pdf

4N60 4N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP4N60E/DDesigner's Data SheetMGP4N60EInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insulate

 0.11. Size:150K  motorola
mgp4n60ed.pdf

4N60 4N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP4N60ED/DDesigner's Data SheetMGP4N60EDInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeN Channel Enhancement Mode

 0.12. Size:154K  motorola
mgw14n60ed.pdf

4N60 4N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW14N60ED/DDesigner's Data SheetMGW14N60EDInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insu

 0.13. Size:125K  motorola
mgp14n60erev0.pdf

4N60 4N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP14N60E/DDesigner's Data SheetMGP14N60EInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insula

 0.14. Size:125K  motorola
mgp4n60e.pdf

4N60 4N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP4N60E/DDesigner's Data SheetMGP4N60EInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insulate

 0.15. Size:83K  philips
phx4n60e.pdf

4N60 4N60

Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.4 Ag Isolated packageRDS(ON) 2.5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

 0.16. Size:80K  philips
php4n60e phb4n60e.pdf

4N60 4N60

Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 Ag Low thermal resistanceRDS(ON) 2.5 sGENERAL DESCRIPTIONN-channel, enh

 0.17. Size:1556K  st
stb24n60m2 sti24n60m2 stp24n60m2 stw24n60m2.pdf

4N60 4N60

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID231STB24N60M2321D2PAKSTI24N60M2I2PAK650 V 0.19 18 ASTP24N60M2TABSTW24N60M2 Extremely low gate charge

 0.18. Size:1364K  st
stf24n60m2 stfi24n60m2 stfw24n60m2.pdf

4N60 4N60

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF24N60M2321 1 STFI24N60M2 650 V 0.19 18 A23TO-220FPSTFW24N60M2I2PAKFP(TO-281) Extremely low gate charge Lower RDS(on) x area

 0.19. Size:815K  st
stf24n60dm2.pdf

4N60 4N60

STF24N60DM2N-channel 600 V, 0.175 typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF24N60DM2 650 V 0.20 18 A Fast-recovery body diode Extremely low gate charge and input 321 capacitanceTO-220FP Low on-resistance 100% avalanche tested Extremely high dv/dt rugg

 0.20. Size:1195K  st
stb24n60dm2 stp24n60dm2 stw24n60dm2.pdf

4N60 4N60

STB24N60DM2, STP24N60DM2, STW24N60DM2N-channel 600 V, 0.175 typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB TABVDS @ RDS(on) 2Order codes ID3 TJmax max13STB24N60DM2D2PAK21STP24N60DM2 650 V 0.20 18 ATO-220STW24N60DM2 Extremely low gate charge and input capacitance32

 0.21. Size:1287K  st
stl24n60m2.pdf

4N60 4N60

STL24N60M2N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDS(2) Bottom viewS(2)S(2)STL24N60M2 650 V 0.21 18 AG(1)D(3) Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistancePowerFLAT

 0.22. Size:549K  fairchild semi
fqpf4n60.pdf

4N60 4N60

April 2000TMQFETQFETQFETQFETFQPF4N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.6A, 600V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced technology has been e

 0.23. Size:527K  fairchild semi
fqp4n60.pdf

4N60 4N60

April 2000TMQFETQFETQFETQFETFQP4N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 600V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced technology has been es

 0.24. Size:765K  fairchild semi
fch104n60.pdf

4N60 4N60

June 2014FCH104N60N-Channel SuperFET II MOSFET600 V, 37 A, 104 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 63 nC)and lower

 0.25. Size:644K  fairchild semi
ssi4n60b ssi4n60b ssw4n60b.pdf

4N60 4N60

November 2001SSW4N60B / SSI4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to

 0.26. Size:579K  fairchild semi
fdpf4n60nz.pdf

4N60 4N60

November 2013FDPF4N60NZN-Channel UniFETTM II MOSFET600 V, 3.8 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF)on

 0.27. Size:912K  fairchild semi
fcp4n60.pdf

4N60 4N60

December 2008 TMSuperFETFCP4N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 1.0balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.

 0.28. Size:922K  fairchild semi
fcd4n60.pdf

4N60 4N60

December 2008 TMSuperFETFCD4N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 1.0balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.

 0.29. Size:629K  fairchild semi
fch104n60f f085.pdf

4N60 4N60

November 2014FCH104N60F_F085N-Channel SuperFET II FRFET MOSFET600 V, 37 A, 104 m DFeatures Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedr

 0.30. Size:607K  fairchild semi
fdd4n60nz.pdf

4N60 4N60

November 2013FDD4N60NZN-Channel UniFETTM II MOSFET600 V, 3.4 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF)on-

 0.31. Size:652K  fairchild semi
fcp104n60f.pdf

4N60 4N60

December 2013FCP104N60FN-Channel SuperFET ll FRFET MOSFET600 V, 37 A, 104 mFeatures DescriptionSuperFET II MOSFET is Fairchild Semiconductors brand-new 650 V @ TJ = 150Chigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 91 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 110 nC

 0.32. Size:797K  fairchild semi
fcp104n60.pdf

4N60 4N60

June 2014FCP104N60N-Channel SuperFET II MOSFET600 V, 37 A, 104 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 63 nC)and lower

 0.33. Size:573K  fairchild semi
fch104n60f.pdf

4N60 4N60

December 2013FCH104N60FN-Channel SuperFET II FRFET MOSFET600 V, 37 A, 104 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 98 mcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This techn

 0.34. Size:478K  fairchild semi
fcd4n60tf fcd4n60tm.pdf

4N60 4N60

October 2013FCD4N60N-Channel SuperFET MOSFET600 V, 3.9 A, 1.2 Features Description 650 V @TJ = 150 C SuperFET MOSFET is Fairchild Semiconductors first genera-tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 1.0 utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 12.8 nC)resistance

 0.35. Size:888K  fairchild semi
ssp4n60b sss4n60b.pdf

4N60 4N60

SSP4N60B/SSS4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to Fast switchi

 0.36. Size:671K  fairchild semi
fqa24n60.pdf

4N60 4N60

April 2000TMQFETQFETQFETQFETFQA24N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 23.5A, 600V, RDS(on) = 0.24 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 56 pF)This advanced technology has be

 0.37. Size:57K  njs
mtp4n60.pdf

4N60 4N60

 0.38. Size:26K  samsung
irfs8xx irfs9xxx sss4n60 sss6n60.pdf

4N60

 0.39. Size:501K  samsung
sss4n60as.pdf

4N60 4N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 0.40. Size:503K  samsung
ssw4n60a.pdf

4N60 4N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 2.037 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 0.41. Size:501K  samsung
ssr4n60a.pdf

4N60 4N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

 0.42. Size:912K  samsung
ssp4n60as.pdf

4N60 4N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 0.43. Size:152K  vishay
sihh14n60e.pdf

4N60 4N60

SiHH14N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.220 Low input capacitance (Ciss)Qg max. (nC) 82 Reduced switching and conduction lossesQgs (nC) 8Qgd (nC) 16 Ultra low gate charge (Qg)Confi

 0.44. Size:396K  diodes
dmg4n60sj3.pdf

4N60 4N60

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SJ3 DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS (@ TJ Max) RDS(ON) Max TC = +25C High BVDSS Rating for Power Application 650V 3.0A Low Input Capacitance 2.5 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony F

 0.45. Size:388K  diodes
dmg4n60sct.pdf

4N60 4N60

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SCT DMG4N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application TC = +25C Low Input/Output Leakage 650V 2.5@VGS = 10V 4.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 0.46. Size:375K  diodes
dmg4n60sk3.pdf

4N60 4N60

NOT RECOMMENDED FOR NEW DESIGN USE DMN60H3D5SK3 / DMN60H4D5SK3 DMG4N60SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS (@ TJ Max) RDS(ON) Max TC = +25C Low Gate Input Resistance 650V 3.7A Low Input Capacitance 2.3 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Note

 0.47. Size:1928K  infineon
aihd04n60r.pdf

4N60 4N60

AIHD04N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimised V and V for low conduction lossesCEsat FG Smooth switching performance leading to low EMI levelsE Very tight parameter distribution

 0.48. Size:2329K  infineon
ikd04n60ra.pdf

4N60 4N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD04N60RA600V TRENCHSTOPTM RC-Series for hard switching applicationsData sheetIndustrial Power ControlIKD04N60RATRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 6

 0.49. Size:396K  infineon
skp04n60.pdf

4N60 4N60

SKP04N60SKB04N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generationCcombined with low conduction losses Short circuit withstand time 10 s Designed for:- Motor controlsGE- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedness,

 0.50. Size:365K  infineon
spp04n60s5.pdf

4N60 4N60

SPP04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargePG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking04N60S5SPP04N60S5 PG-TO220 Q67040-S

 0.51. Size:339K  infineon
sgp04n60.pdf

4N60 4N60

SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25

 0.52. Size:345K  infineon
spp24n60c3.pdf

4N60 4N60

SPP24N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.16 New revolutionary high voltage technologyID 24.3 A Worldwide best RDS(on) in TO 220PG-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPP24N60C3 P

 0.53. Size:304K  infineon
spp04n60c3 spb04n60c3 spa04n60c3.pdf

4N60 4N60

SPP04N60C3, SPB04N60C3Final dataSPA04N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance P-TO

 0.54. Size:744K  infineon
spd04n60c3 spu04n60c3.pdf

4N60 4N60

VDS Tjmax G G G G

 0.55. Size:342K  infineon
sgp04n60 sgd04n60g.pdf

4N60 4N60

SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25

 0.56. Size:423K  infineon
spb04n60c3.pdf

4N60 4N60

VDS Tjmax G G

 0.57. Size:339K  infineon
sgd04n60.pdf

4N60 4N60

SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25

 0.58. Size:1143K  infineon
skb04n60.pdf

4N60 4N60

SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

 0.59. Size:458K  infineon
igu04n60t.pdf

4N60 4N60

IGU04N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP technology CGE Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for : - frequency inverters - drives PG-TO251-3 TRENCHSTOP technology for 600V applications offers : - very tight parameter distribution - hig

 0.60. Size:678K  infineon
spw24n60cfd.pdf

4N60 4N60

SPW24N60CFDTMCIMOSTM "9@/; %;+877+;BFeaturesV 1?B6M 650 V!0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9:R 0.185DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 688DG9>CC

 0.61. Size:784K  infineon
sgb04n60.pdf

4N60 4N60

SGB04N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switchi

 0.62. Size:1820K  infineon
ikd04n60rf.pdf

4N60 4N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD04N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzData sheetIndustrial Power ControlIKD04N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplica

 0.63. Size:807K  infineon
spw24n60c3.pdf

4N60 4N60

SPW24N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.16 New revolutionary high voltage technologyID 24.3 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW24N60C3 PG-TO247 Q67040-S4640 24N60C3Maximum Rati

 0.64. Size:539K  infineon
spp24n60cfd.pdf

4N60 4N60

SPP24N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.185DS(on),max Extremely low reverse recovery chargeI 21.7 AD Ultra low gate chargePG-TO220 Extreme dv /dt rated High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed

 0.65. Size:1808K  infineon
ikd04n60r.pdf

4N60 4N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD04N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsData sheetIndustrial Power ControlIKD04N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600

 0.66. Size:620K  infineon
sps04n60c3.pdf

4N60 4N60

S VDS Tjmax G -3-11 Marking S G 1-3-11

 0.67. Size:394K  infineon
ikp04n60t.pdf

4N60 4N60

IKP04N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Drives TrenchStop and Fieldstop technology for 6

 0.68. Size:786K  infineon
sgb04n60 .pdf

4N60 4N60

SGB04N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switchi

 0.69. Size:561K  infineon
ikp04n60t iki04n60t.pdf

4N60 4N60

IKP04N60T TrenchStop Series pIJIKI04N60TdsadsaLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Very low VCE(sat) 1.5 V (typ.) C Maximum Junction Temperature 175 C Short circuit withstand time 5s Designed for :GE - Frequency Converters - Drives TrenchStop and Fieldstop techno

 0.70. Size:360K  infineon
spb04n60s5.pdf

4N60 4N60

SPB04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPB04N60S5 PG-TO263 Q67040-S4201 04N60S5Maximum RatingsPar

 0.71. Size:1651K  infineon
ikd04n60rf 1 1.pdf

4N60 4N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD04N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzDatasheetIndustrial & MultimarketIKD04N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplicat

 0.72. Size:588K  infineon
spp04n60c3 spa04n60c3.pdf

4N60 4N60

VDS Tjmax G FP G 3 21P-TO220-3-31 G ;-3-111

 0.73. Size:1017K  infineon
iki04n60t.pdf

4N60 4N60

IKP04N60T TrenchStop Series pIJIKI04N60TdsadsaLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Very low VCE(sat) 1.5 V (typ.) C Maximum Junction Temperature 175 C Short circuit withstand time 5s Designed for :GE - Frequency Converters - Drives TrenchStop and Fie

 0.74. Size:1148K  infineon
skb04n60g.pdf

4N60 4N60

SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

 0.75. Size:1802K  infineon
iku04n60r.pdf

4N60 4N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD04N60R, IKU04N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsDatasheetIndustrial & MultimarketIKD04N60R, IKU04N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (R

 0.76. Size:169K  ixys
ixfk64n60p ixfx64n60p.pdf

4N60 4N60

IXFK 64N60PVDSS = 600 VPolarHVTM HiPerFETIXFX 64N60PID25 = 64 APower MOSFET RDS(on) 96 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Contin

 0.77. Size:101K  ixys
ixgh24n60cd1.pdf

4N60 4N60

IXGH 24N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 24N60CD1 IC25 = 48 Awith Diode VCE(sat) = 2.5 VLightspeed SeriesPreliminary dataTO-268Symbol Test Conditions Maximum Ratings(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGVGES Continuous 20 V E C (TAB)VGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110C24 A

 0.78. Size:163K  ixys
ixgt64n60b3.pdf

4N60 4N60

Preliminary Technical InformationIXGH64N60B3 VCES = 600VGenX3TM 600V IGBTIXGT64N60B3IC110 = 64AMedium speed low Vsat PTVCE(sat) 1.8VIGBTs for 5 - 40kHz switchingtfi(typ) = 88nsSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30

 0.79. Size:98K  ixys
ixgp24n60c.pdf

4N60 4N60

HiPerFASTTM IGBTIXGA 24N60C VCES = 600 VIXGP 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EIC25 TC = 25C48 AIC110 TC = 110C24 ATO-263 AA (IXGA)ICM TC

 0.80. Size:92K  ixys
ixgp24n60c4.pdf

4N60 4N60

Advance Technical InformationHigh-Gain IGBTs VCES = 600VIXGP24N60C4IC110 = 24AIXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68nsHigh-Speed PT Trench IGBTsTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IX

 0.81. Size:233K  ixys
ixgh24n60c4d1.pdf

4N60 4N60

VCES = 600V High-Gain IGBT IXGH24N60C4D1 IC110 = 24A w/ Diode VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C Tab E VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter

 0.82. Size:34K  ixys
ixfr44n60.pdf

4N60 4N60

HiPerFETTM Power MOSFETsIXFR 44N60 VDSS = 600 VISOPLUS247TMID25 = 38 A(Electrically Isolated Back Surface)RDS(on)= 130 mWSingle MOSFET Dietrr 250 nsISOPLUS 247TMSymbol Test Conditions Maximum Ratings E153432VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 VVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C38 AG = Gate D = Drain

 0.83. Size:148K  ixys
ixfn64n60p.pdf

4N60 4N60

VDSS = 600 VIXFN 64N60PPolarHVTM HiPerFETID25 = 50 APower MOSFET RDS(on) 96 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeminiBLOC, SOT-227 B (IXFN)E153432SSymbol Test Conditions Maximum Ratings GVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VS

 0.84. Size:133K  ixys
ixgh24n50bu1 ixgh24n60bu1.pdf

4N60 4N60

VCES IC(25) VCE(sat) tfiHiPerFASTTM IGBT500 V 48 A 2.3 V 80 nsIXGH24N50BU1with Diode600 V 48 A 2.5 V 80 nsIXGH24N60BU1Combi PackPreliminary dataTO-247 ADSymbol Test Conditions Maximum Ratings24N50 24N60C (TAB)VCES TJ = 25 C to 150 C 500 600 VGVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V CEVGES Continuous 20 VVGEM Transient 30 VG = Gate, C = Collector,E

 0.85. Size:173K  ixys
ixfa14n60p3 ixfh14n60p3.pdf

4N60 4N60

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA14N60P3Power MOSFETs ID25 = 14AIXFP14N60P3 RDS(on) 540m IXFH14N60P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 15

 0.86. Size:100K  ixys
ixsh24n60bd1.pdf

4N60 4N60

IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC

 0.87. Size:229K  ixys
ixfc14n60p.pdf

4N60 4N60

IXFC 14N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 8 APower MOSFET RDS(on) 630 m ISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)E153432VDSS TJ = 25 C to 150 C 600 VVDGR TJ

 0.88. Size:111K  ixys
ixsh24n60 a.pdf

4N60 4N60

Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em

 0.89. Size:52K  ixys
ixgt24n60c.pdf

4N60 4N60

IXGH 24N60C VCES = 600 VHiPerFASTTM IGBTIXGT 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110

 0.90. Size:151K  ixys
ixfr64n60p.pdf

4N60 4N60

VDSS = 600 VPolarHVTM HiPerFET IXFR 64N60PID25 = 36 APower MOSFET RDS(on) 105 m trr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeISOPLUS247 (IXFR)E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 15

 0.91. Size:92K  ixys
ixgh24n60c4.pdf

4N60 4N60

Advance Technical InformationHigh-Gain IGBTs VCES = 600VIXGP24N60C4IC110 = 24AIXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68nsHigh-Speed PT Trench IGBTsTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IX

 0.92. Size:37K  ixys
ixsh24n60u1 ixsh24n60au1.pdf

4N60 4N60

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat)IXSH 24N60U1 600 V 48 A 2.2 VShort Circuit SOA CapabilityIXSH 24N60AU1 600 V 48 A 2.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEG = Gate, C = Collector,IC25 TC = 25C48 AE = Emitter, TAB

 0.93. Size:257K  ixys
ixfa14n60p ixfh14n60p ixfp14n60p.pdf

4N60 4N60

IXFA 14N60P VDSS = 600 VPolarHVTM HiPerFETIXFH 14N60P ID25 = 14 APower MOSFET IXFP 14N60P RDS(on) 550 m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263 (IXFA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S(TAB)VGS Continuous 30 VV

 0.94. Size:100K  ixys
ixsh24n60b.pdf

4N60 4N60

IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC

 0.95. Size:104K  ixys
ixfx44n60 ixfk44n60.pdf

4N60 4N60

HiPerFETTM IXFX 44N60 VDSS = 600 VIXFK 44N60 ID25 = 44 APower MOSFETsRDS(on) = 130 mWSingle MOSFET Dietrr 250 nsPLUS 247TM (IXFX)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C44 ATO-264 AA (IXFK)IDM TC = 25C, pulse width limite

 0.96. Size:110K  ixys
ixsh24n60a.pdf

4N60 4N60

Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em

 0.97. Size:98K  ixys
ixga24n60c.pdf

4N60 4N60

HiPerFASTTM IGBTIXGA 24N60C VCES = 600 VIXGP 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EIC25 TC = 25C48 AIC110 TC = 110C24 ATO-263 AA (IXGA)ICM TC

 0.98. Size:137K  ixys
ixgh24n60b.pdf

4N60 4N60

IXGH 24N60B VCES = 600 VHiPerFASTTM IGBTIC25 = 48 AVCE(sat) = 2.3 Vtfi = 80 nsPreliminary DataTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GIC25 TC = 25C48 ACEIC90 TC = 90C24 AG = Gate, C = Collector,ICM TC = 25C, 1 ms 96 A

 0.99. Size:180K  ixys
ixgx64n60b3d1.pdf

4N60 4N60

VCES = 600VGenX3TM 600V IGBTIXGK64N60B3D1IC110 = 64Awith DiodeIXGX64N60B3D1VCE(sat) 1.8VMedium speed low Vsat PT tfi(typ) = 88nsIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 V C (TAB)EVGEM Transient 30 VIC110

 0.100. Size:54K  ixys
ixgr24n60c.pdf

4N60 4N60

VCES = 600 VIXGR 24N60CHiPerFASTTM IGBTIC25 = 42 AISOPLUS247TMVCE(sat) = 2.5 V(Electrically Isolated Back Surface)tfi(typ) = 60 nsPreliminary data sheetSymbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC =

 0.101. Size:100K  ixys
ixst24n60bd1.pdf

4N60 4N60

IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC

 0.102. Size:100K  ixys
ixst24n60b.pdf

4N60 4N60

IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC

 0.103. Size:36K  ixys
ixsh24n60u1.pdf

4N60 4N60

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat)IXSH 24N60U1 600 V 48 A 2.2 VShort Circuit SOA CapabilityIXSH 24N60AU1 600 V 48 A 2.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEG = Gate, C = Collector,IC25 TC = 25C48 AE = Emitter, TAB

 0.104. Size:36K  ixys
ixsh24n60au1.pdf

4N60 4N60

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat)IXSH 24N60U1 600 V 48 A 2.2 VShort Circuit SOA CapabilityIXSH 24N60AU1 600 V 48 A 2.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEG = Gate, C = Collector,IC25 TC = 25C48 AE = Emitter, TAB

 0.105. Size:183K  ixys
ixgr64n60a3.pdf

4N60 4N60

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGR64N60A3IC110 = 47AVCE(sat) 1.35VUltra-low Vsat PT IGBTs forup to 5kHz switchingISOPLUS247TM (IXGR)Symbol Test Conditions Maximum RatingsE153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 11

 0.106. Size:110K  ixys
ixsh24n60.pdf

4N60 4N60

Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em

 0.107. Size:155K  ixys
ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf

4N60 4N60

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA24N60XPower MOSFET ID25 = 24AIXFP24N60X RDS(on) 175m IXFQ24N60XIXFH24N60XN-Channel Enhancement ModeTO-220AB (IXFP)Avalanche RatedTO-263 AA (IXFA)Fast Intrinsic DiodeGGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

 0.108. Size:117K  ixys
ixgh24n60aui.pdf

4N60 4N60

VCES = 600 VIXGH 24N60AU1HiPerFASTTMIC25 = 48 AIXGH 24N60AU1SIGBT with DiodeVCE(sat) = 2.7 VCombi Packtfi = 275 nsTO-247 SMD(24N60AU1S)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VG C (TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C48 A(24N60AU1)IC90 TC = 90C

 0.109. Size:128K  ixys
ixfn44n60.pdf

4N60 4N60

HiPerFETTMIXFN 44N60 VDSS = 600 VPower MOSFETsID25 = 44 ASingle Die MOSFET RDS(on) = 130 mWDtrr 250 nsN-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to 150C 600 VSVDGR TJ = 25C to 150C; RGS = 1 MW 600 VGVGS Continuous 20 VVGSM Transient 30 VSI

 0.110. Size:147K  ixys
ixta14n60p ixtq14n60p ixtp14n60p.pdf

4N60 4N60

IXTA 14N60P VDSS = 600 VPolarHVTMIXTP 14N60P ID25 = 14 APower MOSFET IXTQ 14N60P RDS(on) 550 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VGVGS Continuous 30 V S(TAB)VGSM Tranisent 40 VID25 TC = 25C14 A

 0.111. Size:180K  ixys
ixgk64n60b3d1.pdf

4N60 4N60

VCES = 600VGenX3TM 600V IGBTIXGK64N60B3D1IC110 = 64Awith DiodeIXGX64N60B3D1VCE(sat) 1.8VMedium speed low Vsat PT tfi(typ) = 88nsIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 V C (TAB)EVGEM Transient 30 VIC110

 0.112. Size:180K  ixys
ixfp14n60p3.pdf

4N60 4N60

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA14N60P3Power MOSFETs ID25 = 14AIXFP14N60P3 RDS(on) 540m IXFH14N60P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 15

 0.113. Size:68K  ixys
ixsp24n60b.pdf

4N60 4N60

IXSP 24N60B VCES = 600 VHigh Speed IGBTIC25 = 48 AVCE(sat) = 2.5 VShort Circuit SOA Capabilitytfi typ = 170 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220 (IXSP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C48 AIC90 TC = 90C24 AG = Gate

 0.114. Size:192K  ixys
ixgh64n60a3.pdf

4N60 4N60

Preliminary Technical InformationIXGH64N60A3 VCES = 600VGenX3TM 600V IGBTIXGT64N60A3IC110 = 64AUltra-lowVsat PT IGBTs for up toVCE(sat) 1.35V5 kHz switchingSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC (TAB)CIC11

 0.115. Size:100K  ixys
ixga24n60c ixgp24n60c.pdf

4N60 4N60

HiPerFASTTM IGBTIXGA 24N60C VCES = 600 VIXGP 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EIC25 TC = 25C48 AIC110 TC = 110C24 ATO-263 AA (IXGA)ICM TC

 0.116. Size:102K  ixys
ixsh24n60b ixsh24n60bd1 ixst24n60b ixst24n60bd1.pdf

4N60 4N60

IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC

 0.117. Size:52K  ixys
ixgh24n60c.pdf

4N60 4N60

IXGH 24N60C VCES = 600 VHiPerFASTTM IGBTIXGT 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110

 0.118. Size:118K  ixys
ixgh24n50b ixgh24n60b.pdf

4N60 4N60

VCES IC(25) VCE(sat) tfiHiPerFASTTM IGBTIXGH24N50B 500 V 48 A 2.3 V 80 ns600 V 48 A 2.5 V 80 nsIXGH24N60BPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD24N50 24N60VCES TJ = 25 C to 150 C 500 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25 C48 AG = Gate, C = Collector,IC90 TC = 9

 0.119. Size:36K  ixys
ixgh34n60b2.pdf

4N60 4N60

Advance Technical DataVCES = 600 VIXGH 34N60B2HiPerFASTTM IGBTIC25 = 70 AVCE(sat)

 0.120. Size:163K  ixys
ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf

4N60 4N60

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFY4N60P3Power MOSFETs ID25 = 4AIXFA4N60P3 RDS(on) 2.2 IXFP4N60P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, RG

 0.121. Size:84K  ixys
ixgp24n60c4d1.pdf

4N60 4N60

Preliminary Technical InformationVCES = 600VHigh-Gain IGBT IXGP24N60C4D1IC110 = 24Aw/ Diode VCE(sat) 2.70V tfi(typ) = 44nsHigh-Speed PT Trench IGBTTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCTabEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 V G = Gate C = Collector

 0.122. Size:192K  ixys
ixgt64n60a3.pdf

4N60 4N60

Preliminary Technical InformationIXGH64N60A3 VCES = 600VGenX3TM 600V IGBTIXGT64N60A3IC110 = 64AUltra-lowVsat PT IGBTs for up toVCE(sat) 1.35V5 kHz switchingSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC (TAB)CIC11

 0.123. Size:141K  ixys
ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf

4N60 4N60

IXTA4N60P VDSS = 600 VPolarHVTMIXTP4N60P ID25 = 4 APower MOSFETIXTU4N60P RDS(on) 2.0 N-Channel Enhancement ModeIXTY4N60PAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient 40 V

 0.124. Size:101K  ixys
ixgt24n60cd1.pdf

4N60 4N60

IXGH 24N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 24N60CD1 IC25 = 48 Awith Diode VCE(sat) = 2.5 VLightspeed SeriesPreliminary dataTO-268Symbol Test Conditions Maximum Ratings(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGVGES Continuous 20 V E C (TAB)VGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110C24 A

 0.125. Size:163K  ixys
ixgh64n60b3.pdf

4N60 4N60

Preliminary Technical InformationIXGH64N60B3 VCES = 600VGenX3TM 600V IGBTIXGT64N60B3IC110 = 64AMedium speed low Vsat PTVCE(sat) 1.8VIGBTs for 5 - 40kHz switchingtfi(typ) = 88nsSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30

 0.126. Size:128K  ixys
ixga24n60c4.pdf

4N60 4N60

Advance Technical InformationHigh-Gain IGBTs VCES = 600VIXGA24N60C4IC110 = 24AIXGP24N60C4 VCE(sat) 2.70V IXGH24N60C4tfi(typ) = 68nsHigh-Speed PT Trench IGBTsTO-263 (IXGA)GEC (Tab)TO-220 (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGCC (

 0.127. Size:449K  mcc
mcu04n60.pdf

4N60 4N60

 0.128. Size:454K  mcc
mcp04n60.pdf

4N60 4N60

 0.129. Size:413K  mcc
mcd04n60.pdf

4N60 4N60

 0.130. Size:714K  mcc
mcpf04n60.pdf

4N60 4N60

MCCTMMCDF04N60Micro Commercial ComponentsOutput CharacteristicsTransfer Characteristics8 1.0Ta=25Ta=25PulsedPulsed6V0.865.5V0.65V40.4VGS=4.5V20.20 0.00 10 20 30 40 50 0 2 4 6 8DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)RDS(ON) VGSRDS(ON) ID5 15Ta=25 Ta=25Pulsed Pulsed4 123 9VGS= 10V

 0.131. Size:687K  onsemi
fdpf4n60nz.pdf

4N60 4N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.132. Size:765K  onsemi
fcp104n60.pdf

4N60 4N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.133. Size:998K  onsemi
fch104n60f-f085.pdf

4N60 4N60

FCH104N60F-F085N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 mDFeatures Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS CapabilityG Qualified to AEC Q101 RoHS Compliant GDTO-247SSDescription SuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family tha

 0.134. Size:136K  onsemi
ndf04n60z ndd04n60z.pdf

4N60 4N60

NDF04N60Z, NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParamete

 0.135. Size:130K  onsemi
ndf04n60z ndp04n60z ndd04n60z.pdf

4N60 4N60

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 2 A 100% Avalanche Tested600 V2.0 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (

 0.136. Size:1634K  onsemi
fqa24n60.pdf

4N60 4N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.137. Size:491K  utc
4n60kl-tf3t-t 4n60kg-tf3t-t 4n60kl-tm3-t 4n60kg-tm3-t 4n60kl-tn3-r 4n60kg-tn3-r 4n60kg-tf2-t.pdf

4N60 4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 0.138. Size:238K  utc
4n60kl-tms-t 4n60kg-tms-t 4n60kl-tms2-t 4n60kg-tms2-t 4n60kl-tms4-t 4n60kg-tms4-t 4n60kl-tn3-r 4n60kg-tn3-r 4n60kl-tnd-r 4n60kg-tnd-r.pdf

4N60 4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

 0.139. Size:491K  utc
4n60kl-ta3-t 4n60kg-ta3-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tf1-t 4n60kg-tf1-t 4n60kl-tf2-t.pdf

4N60 4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 0.140. Size:354K  utc
4n60z.pdf

4N60 4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 1time, low gate charge, low on-state resistance and have a high TO-220Frugged avalanche characteristics. This power MOSFET is usually used at high speed switching

 0.141. Size:361K  utc
4n60k.pdf

4N60 4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220F TO-220F1The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp

 0.142. Size:441K  utc
4n60l-ta3-t 4n60g-ta3-t 4n60l-tf1-t 4n60g-tf1-t 4n60l-tf2-t 4n60g-tf2-t 4n60l-tf3-t 4n60g-tf3-t 4n60l-tf3t-t 4n60g-tf3t-t 4n60l-tq2-r 4n60g-tq2-r.pdf

4N60 4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingapplication

 0.143. Size:441K  utc
4n60l-tm3-t 4n60g-tm3-t 4n60l-tms-t 4n60g-tms-t 4n60l-tn3-r 4n60g-tn3-r 4n60l-tnd-r 4n60g-tnd-r 4n60l-t2q-t 4n60g-t2q-t 4n60l-tq2-t 4n60g-tq2-t.pdf

4N60 4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingapplication

 0.144. Size:238K  utc
4n60kl-ta3-t 4n60kg-ta3-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tf1-t 4n60kg-tf1-t 4n60kl-tf2-t 4n60kg-tf2-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tm3-t 4n60kg-tm3-t.pdf

4N60 4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

 0.145. Size:168K  apt
apt94n60l2c3.pdf

4N60 4N60

APT94N60L2C3600V 94A 0.035Super Junction MOSFETTO-264MaxCOOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, QgG Avalanche Energy Rated TO-264 Max PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT94N60L2C3 UNITVDSS Drain-Source Voltage60

 0.146. Size:15K  harris semi
hgtg24n60d.pdf

4N60

HGTG24N60D1DTypical Performance Curves (Continued)1300TJ = +150oC, TC = +100oC, RGE = 25, L = 500H801200VCE = 480V, VGE = 10V1100VCE = 480V, VGE = 15V1000fMAX1 = 0.05/tD(OFF)IfMAX2 = (PD - PC)/WOFF900PC = DUTY FACTOR = 50%10800RJC = 1.0oC/WVCE = 240V, VGE = 10V700VCE = 240V, VGE = 15V600VCE = 480V, VGE = 10V, 15V500TJ = +150oCVCE = 240V, VG

 0.147. Size:441K  semelab
ssh4n55 ssh4n60.pdf

4N60 4N60

SSH4N55 PCB24

 0.148. Size:459K  secos
ssrf4n60.pdf

4N60 4N60

SSRF4N60 4A , 600 V , RDS(ON) 2.4 N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION ITO-220 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without B Ndegrading performance over time. This

 0.149. Size:477K  taiwansemi
tsm4n60ch tsm4n60ci tsm4n60cp tsm4n60cz.pdf

4N60 4N60

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a

 0.150. Size:421K  jiangsu
cjd04n60a.pdf

4N60 4N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60A N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

 0.151. Size:553K  jiangsu
cjp04n60.pdf

4N60 4N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60 600V N-Channel Power MOSFET TO-220-3L General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast 1. GATE recovery time. Desigh

 0.152. Size:307K  jiangsu
cju04n60a.pdf

4N60 4N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60A N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 0.153. Size:325K  jiangsu
cjp04n60a.pdf

4N60 4N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60A N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 0.154. Size:640K  jiangsu
cjd04n60.pdf

4N60 4N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETSCJD04N60 N-Channel Power MOSFET TO-251 General Description 1. GATE This advanced high voltage MOSFET is designed to wighstand 2. DRAIN 3. SOURCE high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery

 0.155. Size:315K  jiangsu
cjpf04n60a.pdf

4N60 4N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 0.156. Size:267K  jiangsu
cjd04n60b.pdf

4N60 4N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed 1. GATE for

 0.157. Size:411K  jiangsu
cju04n60.pdf

4N60 4N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60 600V N-Channel Power MOSFET TO-252-2LGeneral Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high

 0.158. Size:333K  jiangsu
cjb04n60a.pdf

4N60 4N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB04N60A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 0.159. Size:501K  jiangsu
cjpf04n60.pdf

4N60 4N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60 600V N-Channel Power MOSFET TO-220F General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode wigh fast 2. DRAIN 3. SOURCE 1 2 3

 0.160. Size:385K  kec
kf4n60d.pdf

4N60 4N60

KF4N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF4N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20switching mode power supp

 0.161. Size:382K  kec
kf4n60f.pdf

4N60 4N60

KF4N60FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSswitching mode power supplies. _A 10.16 0.2+_B 15.8

 0.162. Size:250K  microsemi
apt94n60l2c3g.pdf

4N60 4N60

APT94N60L2C3600V 94A 0.035Super Junction MOSFETTO-264MaxCOOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, QgD Avalanche Energy Rated TO-264 Max PackageGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made withStwo parallel MOSFET die. It

 0.163. Size:794K  wietron
4n60d 4n60f 4n60i 4n60p.pdf

4N60 4N60

4N60Surface Mount N-Channel Power MOSFETDRAIN CURRENTP b Lead(Pb)-Free4 AMPERESDRAIN SOURCE VOLTAGEDescription:600 VOLTAGEThe WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high

 0.164. Size:123K  hsmc
h04n60.pdf

4N60 4N60

Spec. No. : MOS200404 HI-SINCERITY Issued Date : 2004.07.01 Revised Date :2010.10.14 MICROELECTRONICS CORP. Page No. : 1/6 H04N60 Series Pin Assignment H04N60 Series Tab3-Lead Plastic TO-263 Package Code: U N-Channel Power Field Effect Transistor (600V, 4A) Pin 1: Gate Pin 2 & Tab: Drain 3 2 Pin 3: Source1Description Tab3-Lead Plastic TO-220ABThis advanced

 0.165. Size:376K  aosemi
aoi4n60.pdf

4N60 4N60

AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.166. Size:376K  aosemi
aod4n60.pdf

4N60 4N60

AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.167. Size:376K  aosemi
aou4n60.pdf

4N60 4N60

AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.168. Size:252K  aosemi
aot4n60.pdf

4N60 4N60

AOT4N60/AOTF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.169. Size:302K  aosemi
aowf4n60.pdf

4N60 4N60

AOWF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOWF4N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.170. Size:539K  aosemi
aod4n60 aoi4n60 aou4n60.pdf

4N60 4N60

AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.171. Size:651K  aosemi
aot4n60 aotf4n60 aotf4n60l.pdf

4N60 4N60

AOT4N60/AOTF4N60/AOTF4N60L600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 & AOTF4N60L have beenfabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4Athat is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.172. Size:252K  aosemi
aotf4n60.pdf

4N60 4N60

AOT4N60/AOTF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.173. Size:55K  ape
ap04n60h-h-hf.pdf

4N60 4N60

AP04N60H-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.8 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

 0.174. Size:57K  ape
ap04n60i-hf.pdf

4N60 4N60

AP04N60I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.35 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC conv

 0.175. Size:59K  ape
ap04n60j-hf.pdf

4N60 4N60

AP04N60J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices forGDuniversal 90~265VAC off-line AC/DC

 0.176. Size:198K  ape
aps04n60h.pdf

4N60 4N60

APS04N60H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAPS04N60 series are from Advanced Power innovated design andGsilicon process technology to achieve the l

 0.177. Size:55K  ape
ap04n60s-h-hf.pdf

4N60 4N60

AP04N60S-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.8 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

 0.178. Size:55K  ape
ap04n60r-a-hf.pdf

4N60 4N60

AP04N60R-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

 0.179. Size:55K  ape
ap04n60h-hf.pdf

4N60 4N60

AP04N60H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC conve

 0.180. Size:59K  ape
ap04n60i-a-hf.pdf

4N60 4N60

AP04N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

 0.181. Size:57K  ape
aps04n60h-hf.pdf

4N60 4N60

APS04N60H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAPS04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

 0.182. Size:159K  ape
ap04n60j.pdf

4N60 4N60

AP04N60J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are from Advanced Power innovated design andGsilicon process technology to achieve the low

 0.183. Size:57K  ape
ap04n60i.pdf

4N60 4N60

AP04N60IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.35 Simple Drive Requirement ID 4AGSDescriptionGDAP04N60 series are specially designed as main switching devices for STO-220CFM(I)universal 90~265VAC off-line AC/DC converter applicat

 0.184. Size:656K  ark-micro
ftp04n60b fta04n60b.pdf

4N60 4N60

FTP04N60B/FTA04N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 600V 2.8 3.6A Low Gate Charge (typical 14.7nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information

 0.185. Size:530K  ark-micro
ftu04n60a ftd04n60a.pdf

4N60 4N60

FTU04N60A/FTD04N60A 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.0 4.5A Low ON Resistance Low Gate Charge (typical 20nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information P

 0.186. Size:666K  ark-micro
ftp04n60a fta04n60a.pdf

4N60 4N60

FTP04N60A/FT A04N60A 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.0 4.5A Low ON Resistance Low Gate Charge (typical 20nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information

 0.187. Size:529K  ark-micro
ftu04n60b ftd04n60b.pdf

4N60 4N60

FTU04N60B/FTD04N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.8 3.6A Low ON Resistance Low Gate Charge (typical 14.7nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Inf

 0.188. Size:758K  alfa-mos
afn04n60t220ft afn04n60t220t afn04n60t251t.pdf

4N60 4N60

AFN04N60 Alfa-MOS 600V / 4A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN04N60 is an N-channel enhancement mode Power 600V/2A,RDS(ON)=2.4(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

 0.189. Size:1214K  shenzhen
sss4n60.pdf

4N60 4N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS4N60Technology co.,Ltd4 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS4N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance

 0.190. Size:379K  sisemi
sif4n60c.pdf

4N60 4N60

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N60CN- MOS / N-CHANNEL POWER MOSFET SIF4N60CN- MOS / N-CHANN

 0.191. Size:382K  sisemi
sif4n60c 1.pdf

4N60 4N60

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N60CN- MOS / N-CHANNEL POWER MOSFET SIF4N60CN- MOS / N-CHANN

 0.192. Size:380K  sisemi
sif4n60d.pdf

4N60 4N60

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N60DN- MOS / N-CHANNEL POWER MOSFET SIF4N60DN- MOS / N-CHANN

 0.193. Size:376K  sisemi
sif4n60d 1.pdf

4N60 4N60

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N60DN- MOS / N-CHANNEL POWER MOSFET SIF4N60DN- MOS / N-CHANN

 0.194. Size:1045K  jilin sino
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf

4N60 4N60

N RN-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 RdsonVgs=10VQg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

 0.195. Size:1304K  jilin sino
jcs4n60v jcs4n60c jcs4n60f jcs4n60r jcs4n60b.pdf

4N60 4N60

N RN-CHANNEL MOSFET JCS4N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson Typ 2.0 Vgs=10V Max 2.5 Qg-typ 17.5nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 0.196. Size:948K  jilin sino
jcs4n60f.pdf

4N60 4N60

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N60 \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5 @Vgs=10V27 nC Qg APPLICATIONS (u High efficiency switch

 0.197. Size:286K  cystek
mtn4n60fp.pdf

4N60 4N60

Spec. No. : C408FP Issued Date : 2008.09.02 CYStech Electronics Corp.Revised Date :2012.11.20 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60FP ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 0.198. Size:320K  cystek
mtn4n60e3.pdf

4N60 4N60

Spec. No. : C408E3 Issued Date : 2010.12.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60E3 ID : 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 0.199. Size:357K  cystek
mtn4n60j3.pdf

4N60 4N60

Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60J3 ID : 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications

 0.200. Size:315K  cystek
mtn4n60afp.pdf

4N60 4N60

Spec. No. : C408FP-B Issued Date : 2010.03.15 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) typ: 2.8 MTN4N60AFP ID : 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 0.201. Size:239K  cystek
mtn4n60ae3.pdf

4N60 4N60

Spec. No. : C408E3-A Issued Date : 2011.01.19 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60AE3 ID : 4A Description The MTN4N60AE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 0.202. Size:339K  cystek
mtn4n60i3.pdf

4N60 4N60

Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60I3 ID : 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 0.203. Size:338K  cystek
mtn14n60fp.pdf

4N60 4N60

Spec. No. : C715FP Issued Date : 2009.09.16 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 0.55(max.) MTN14N60FP ID : 14A Description The MTN14N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

 0.204. Size:4720K  goford
g4n60k.pdf

4N60 4N60

GOFORDG4N60K5N60Features Application 600V, 4A High frequency switching mode power supply R = 2.0 (Typ.) @ V = 10V Uninterruptible Power Supply (UPS) DS(ON) GS Fast switching Electronic ballast 100% avalanche tested Improved dv/dt capability RoHS CompliantPackage TO-252 Ordering Information Part Number Marking Case Packaging

 0.205. Size:190K  samhop
sdf04n60 sdp04n60.pdf

4N60 4N60

SDP04N60SDF04N60aS mHop Microelectronics C orp.Ver 2.2N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.600V 4A 2.0 @ VGS=10V TO-220 and TO-220F Package.DGG D S G D SSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package Mar

 0.206. Size:155K  samhop
sdu04n60 sdd04n60.pdf

4N60 4N60

GreenProduct SDU/D04N60aS mHop Microelectronics C orp.Ver 2.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.600V 4A 2.1 @ VGS=10V Suface Mount Package.DGSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERIN

 0.207. Size:165K  solitron
sdf4n60.pdf

4N60

 0.208. Size:510K  silikron
ssf4n60g.pdf

4N60 4N60

SSF4N60G Main Product Characteristics: VDSS 600V RDS(on) 1.85 (typ.) ID 4A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.209. Size:518K  silikron
ssf4n60d.pdf

4N60 4N60

SSF4N60D Main Product Characteristics: VDSS 600V RDS(on) 2.0 (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.210. Size:524K  silikron
ssf4n60f.pdf

4N60 4N60

SSF4N60F Main Product Characteristics: VDSS 600V RDS(on) 1.9(typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.211. Size:649K  silikron
ssf4n60.pdf

4N60 4N60

SSF4N60 Features Vdss = 600V Extremely high dv/dt capability Id = 4A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 2.3 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF4N60 is a new generation of high voltage NChannel enhancement mode

 0.212. Size:152K  can-sheng
cs4n60 to-252.pdf

4N60

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsula

 0.213. Size:255K  inpower semi
ftp04n60c fta04n60c.pdf

4N60 4N60

FTP04N60CFTA04N60CN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) ID Adaptor Charger600 V 2.2 4.0 A SMPS Standby PowerFeatures: D RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching CurvesG GGOrdering InformationDSDS TO-220FTO-220 SPART

 0.214. Size:248K  inpower semi
ftp04n60d fta04n60d.pdf

4N60 4N60

FTP04N60DFTA04N60DN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) ID Adaptor Charger600 V 2.2 4.0 A SMPS Standby PowerFeatures:D RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching CurvesGGGOrdering InformationDSDS TO-220FTO-220 SPART N

 0.215. Size:900K  blue-rocket-elect
br4n60.pdf

4N60 4N60

BR4N60(BRCS4N60R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

 0.216. Size:745K  blue-rocket-elect
brf4n60.pdf

4N60 4N60

BRF4N60(BRCS4N60F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi

 0.217. Size:700K  blue-rocket-elect
brd4n60.pdf

4N60 4N60

BRD4N60(BRCS4N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

 0.218. Size:827K  blue-rocket-elect
bra4n60.pdf

4N60 4N60

BRA4N60 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package.. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc

 0.219. Size:799K  blue-rocket-elect
bri4n60.pdf

4N60 4N60

BRI4N60(BRCSI4N60I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high e

 0.220. Size:521K  lrc
l4n60.pdf

4N60 4N60

LESHAN RADIO COMPANY, LTD.L4N604 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220The LRC L4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed 1switching applications i

 0.221. Size:451K  nell
4n60a 4n60af 4n60g.pdf

4N60 4N60

RoHS 4N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(4A, 600Volts)DESCRIPTION The Nell 4N60 is a three-terminal silicon DDdevice with current conduction capabilityof 4A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such

 0.222. Size:208K  shantou-huashan
hfp4n60.pdf

4N60 4N60

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP4N60 APPLICATIONSL TO-220 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25

 0.223. Size:343K  crhj
cs4n60 arrd.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 ARRD General Description VDSS 600 V CS4N60 ARRD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.224. Size:356K  crhj
cs4n60 a3tdy.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A3TDY General Description VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.225. Size:340K  crhj
cs4n60 a7hd.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A7HD General Description VDSS 600 V CS4N60 A7HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.226. Size:220K  crhj
cs4n60 a3r.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A3R General Description VDSS 600 V CS4N60 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.227. Size:264K  crhj
cs4n60f a9r.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.228. Size:344K  crhj
cs4n60f a9tdy.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.229. Size:351K  crhj
cs4n60 a4tdy.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A4TDY General Description VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.230. Size:343K  crhj
cs4n60f a9hd.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60F A9HD General Description VDSS 600 V CS4N60F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.231. Size:231K  crhj
cs4n60 a4r.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A4R General Description VDSS 600 V CS4N60 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.232. Size:345K  crhj
cs4n60 a8hd.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A8HD General Description VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.233. Size:353K  crhj
cs4n60 a3hd.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A3HD General Description VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.234. Size:352K  crhj
cs4n60 a4hd.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A4HD General Description VDSS 600 V CS4N60 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.235. Size:144K  jdsemi
cm4n60c.pdf

4N60 4N60

RCM4N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

 0.236. Size:128K  jdsemi
cm4n60f.pdf

4N60 4N60

RCM4N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE 2 1 23

 0.237. Size:144K  jdsemi
cm4n60c to251.pdf

4N60 4N60

RCM4N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

 0.238. Size:145K  jdsemi
cm4n60.pdf

4N60 4N60

RCM4N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

 0.239. Size:171K  first silicon
ftk4n60p f d i.pdf

4N60 4N60

SEMICONDUCTORFTK4N60P / F / D / ITECHNICAL DATAPower MOSFET4 Amps, 600 VoltI :N-CHANNEL POWER MOSFET1TO - 251D :DESCRIPTION1TO - 252The FTK 4N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usua

 0.240. Size:1765K  kexin
kx4n60f.pdf

4N60 4N60

DIP Type MOSFETN-Channel MOSFETKX4N60FUnit: mmTO-220F0.200.200.202.540.200.70 Features VDS (V) = 600V ID = 2.4 A (VGS = 10V) RDS(ON) 2.5 (VGS = 10V)0.202.76D1.47max0.200.501 2 3G0.200.802.54typ2.54typS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 600V

 0.241. Size:2528K  kexin
ndt4n60.pdf

4N60 4N60

SMD Type MOSFETN-Channel MOSFETNDT4N60TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 600V ID = 3.9 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V)0.127+0.1 Low effective output capacitance 0.80-0.1max+ 0.11 Gate2.3 0.60- 0.1+0.154.60 -0.152 Drain3 Source Absolute Maximum Ratings Ta = 2

 0.242. Size:800K  silan
svf4n60d svf4n60f svf4n60t svf4n60m.pdf

4N60 4N60

SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS

 0.243. Size:364K  silan
svsp14n60td2 svsp14n60fjdd2 svsp14n60fd2.pdf

4N60 4N60

SVSP14N60F(FJD)(T)D2 14A, 600V MOS 2 SVSP14N60F(FJD)(T)D2 N MOSFET 1 MOS 31. 2. 3.SVSP14N60F(FJD)(T)D2

 0.244. Size:321K  silan
svfp14n60cfjd.pdf

4N60 4N60

SVFP14N60CFJD 14A600V N 2SVFP14N60CFJD N MOS F-CellTM VDMOS 1 3

 0.245. Size:377K  silan
svsp24n60fjdd2 svsp24n60td2.pdf

4N60 4N60

SVSP24N60FJD(T)D2 24A600V MOS 2SVSP24N60FJD(T)D2 N MOSFET 1 MOS 3. 1. 2. 3.SVSP24N60FJD(T)D2

 0.246. Size:358K  silan
svs14n60td2 svs14n60fjd2 svs14n60fd2.pdf

4N60 4N60

SVS14N60F(FJ)(T)D2 14A, 600V MOS 2 SVS14N60F(FJ)(T)D2 N MOSFET 1 MOS 3SVS14N60F(FJ)(T)D2 /

 0.247. Size:479K  silan
svf4n60f svf4n60t svf4n60dtr svf4n60m.pdf

4N60 4N60

SVF4N60D/F/T/M 4A600V N 2SVF4N60D/F/T/M N MOS F-CellTM VDMOS 113TO-252-2L3

 0.248. Size:473K  silan
svf4n60caf svf4n60cak svf4n60cat svf4n60cadtr svf4n60camn svf4n60camj.pdf

4N60 4N60

SVF4N60CAF/K/D/T/MN/MJ 4A600V N 2 SVF4N60CAF/K/D/T/MN/MJ N MOS 13 F-CellTM VDMOS 1TO-252-2L3

 0.249. Size:900K  silan
svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf

4N60 4N60

SVF4N60CAF/K/D/T/MN/MJ 4A600V N SVF4N60CAF/K/D/T/MN/MJ N MOS F-CellTM VDMOS

 0.250. Size:318K  silan
svfp14n60cfj.pdf

4N60 4N60

SVFP14N60CFJ 14A600V N 2SVFP14N60CFJ N MOS F-CellTM VDMOS 13 1. 2.

 0.251. Size:323K  silan
svf4n60cafj.pdf

4N60 4N60

SVF4N60CAFJ 4A600V N 2SVF4N60CAFJ N MOS 1 F-CellTM VDMOS 3 1. 2.

 0.252. Size:325K  silan
svf4n60rd svf4n60rdm.pdf

4N60 4N60

SVF4N60RD(M) 4A600V N SVF4N60RD(M) N MOS F-CellTM VDMOS AC-DC

 0.253. Size:422K  silan
svfp4n60camj svfp4n60cadtr.pdf

4N60 4N60

SVFP4N60CAMJ/D 4A600V N 2SVFP4N60CAMJ/D N MOS F-CellTM VDMOS 1 3

 0.254. Size:845K  magnachip
mdf4n60dth.pdf

4N60 4N60

MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 0.255. Size:842K  magnachip
mdd4n60brh mdi4n60bth.pdf

4N60 4N60

MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0General Description Features The MDD/I4N60B uses advanced Magnachips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 2.0 @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications

 0.256. Size:943K  magnachip
mdf4n60bth.pdf

4N60 4N60

MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 0.257. Size:1239K  magnachip
mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdf

4N60 4N60

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable

 0.258. Size:561K  bruckewell
ms4n60c.pdf

4N60 4N60

HV MOSFET DIE SPECIFICATION Product Name: BW-MS4N60C Chip Features Front side Back side Chip Size (um) Thickness (um) Pad Size-Gate (um) Pad Size-Source (um) 3,180 * 2,720 350 420 * 520 900 * 1900 Referenced PKG Electrical Ratings TC = 25Cunless otherwise noted Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V VGS Gate to Source Vol

 0.259. Size:824K  bruckewell
msd4n60.pdf

4N60 4N60

MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme

 0.260. Size:375K  bruckewell
ms14n60.pdf

4N60 4N60

MS14N60 900V N-Channel MOSFET Description The MS14N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requiremen

 0.261. Size:844K  bruckewell
ms4n60.pdf

4N60 4N60

MS4N60 N-Channel Enhancement Mode Power MOSFET Description The MS4N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150

 0.262. Size:992K  bruckewell
msf4n60l.pdf

4N60 4N60

MSF4N60L 600V N-Channel MOSFET Description The MSF4N60L is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

 0.263. Size:373K  bruckewell
msf14n60.pdf

4N60 4N60

MSF14N60 N-Channel Enhancement Mode Power MOSFET Description The MS14N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 0.264. Size:287K  bruckewell
msq4n60.pdf

4N60 4N60

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ Product Specification PRELIMINARY N-Channel Enhancement Mode Power MOSFET MSQ4N60 Description The MSQ4N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which

 0.265. Size:381K  bruckewell
msu4n60 s.pdf

4N60 4N60

Preliminary MSU4N60_S 600V N-Channel MOSFET Description The MSU4N60_S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design V

 0.266. Size:694K  bruckewell
msu4n60.pdf

4N60 4N60

MSU4N60 600V N-Channel MOSFET Description The MSU4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme

 0.267. Size:911K  bruckewell
msf4n60.pdf

4N60 4N60

MSF4N60 MSF4N60 600V N-Channel MOSFET General Description The MSF4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

 0.268. Size:532K  winsemi
wfd4n60.pdf

4N60 4N60

WFD4N60WFD4N60WFD4N60WFD4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V.R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150)General Descr

 0.269. Size:457K  winsemi
sff4n60.pdf

4N60 4N60

SFF4N60SFF4N60SFF4N60SFF4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V,R (Max 2.2)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

 0.270. Size:512K  winsemi
wfu4n60.pdf

4N60 4N60

WFU4N60WFU4N60WFU4N60WFU4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V.R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150)General Descr

 0.271. Size:445K  winsemi
wfp4n60.pdf

4N60 4N60

WFP4N60WFP4N60WFP4N60WFP4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V,R (Max 2.2)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

 0.272. Size:677K  winsemi
wff4n60.pdf

4N60 4N60

WFF4N60WFF4N60WFF4N60WFF4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V,R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

 0.273. Size:532K  winsemi
wfd4n60b.pdf

4N60 4N60

WFD4N60BWFD4N60BWFD4N60BWFD4N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V.R (Max 2.4)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150)General D

 0.274. Size:463K  belling
blv4n60.pdf

4N60 4N60

BLV4N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 2.2 Simple Drive Requirements ID 4ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless

 0.275. Size:341K  champion
cmt04n60.pdf

4N60 4N60

CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on)efficiently. This new high energy device also offers a Lower Capacitancesdrain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc

 0.276. Size:2765K  citcorp
cs4n60fa9hd.pdf

4N60 4N60

CS4N60FA9HD600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Ep

 0.277. Size:123K  crownpo
ctm04n60.pdf

4N60 4N60

CTM04N60CTM04N60Crownpo TechnologyCrownpo TechnologyPower MOSFETFeatures General DescriptionHigher Current RatingThis advanced high voltage MOSFET is designed toLower RDS(on)withstand high energy in the avalanche mode and switchLower Capacitancesefficiently. This new high energy device also offers aLower Total Gate Chargedrain-to-source diode with f

 0.278. Size:1158K  feihonltd
fhu4n60a fhp4n60a fhd4n60a fhf4n60a.pdf

4N60 4N60

N N-CHANNEL MOSFET FHU4N60A/FHP4N60A/FHD4N60A/FHF4N60A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

 0.279. Size:101K  hy
hy4n60t.pdf

4N60 4N60

HY4N60T / HY4N60FT600V / 4.0A600V, RDS(ON)=2.4@VGS=10V, ID=2.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDS

 0.280. Size:181K  hy
hy4n60d.pdf

4N60 4N60

HY4N60D / HY4N60M600V / 4.0A600V, RDS(ON)=2.4@VGS=10V, ID=2.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS21 1D G 2 In compliance with EU RoHs 2002/95/EC Directives G3DS3SMec

 0.281. Size:316K  kia
kia4n60h.pdf

4N60 4N60

4.0A600VN-CHANNELMOSFET4N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.2. Features R =2.3@V =10VDS(ON) GS Lowgate cha

 0.282. Size:170K  lzg
cs4n60f.pdf

4N60 4N60

BRF4N60(CS4N60F) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 0.283. Size:235K  lzg
csi4n60.pdf

4N60 4N60

BRI4N60(CSI4N60) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 0.284. Size:237K  lzg
cs4n60.pdf

4N60 4N60

BR4N60(CS4N60) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

 0.285. Size:628K  samwin
sw4n60dc swi4n60dc swd4n60dc.pdf

4N60 4N60

SW4N60DCN-channel Enhancement mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252 BVDSS : 600VID : 4A High ruggedness RDS(ON) (Typ 2.0)@VGS=10VRDS(ON) : 2.0 Gate Charge (Typ 17nC) Improved dv/dt Capability 121 2 100% Avalanche Tested2 33 Application: LED,Charge11. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produce

 0.286. Size:958K  samwin
swf4n60k swi4n60k swd4n60k.pdf

4N60 4N60

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 600V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V RDS(ON) : 1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adapter,LED, Charger 3 3 3 1. Gate 2. Drain 3. Source 1 3

 0.287. Size:654K  samwin
sw4n60d.pdf

4N60 4N60

SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251N TO-252 ID : 4A High ruggedness RDS(ON) : 2.2 RDS(ON) (Max 2.2)@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 2 1 1 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produc

 0.288. Size:965K  samwin
swf4n60d.pdf

4N60 4N60

SW4N60DN-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFETFeaturesBVDSS : 600VTO-251S TO-251M TO-252TO-220F TO-220FT TO-251ID : 4A High ruggedness Low RDS(ON) (Typ 1.9)RDS(ON) : 1.9@VGS=10V Low Gate Charge (Typ 18nC)111 121 212 2 23 Improved dv/dt Capability 2 33 2333 100% Avalanche Tested Application:A

 0.289. Size:393K  samwin
sw4n60a.pdf

4N60 4N60

SAMWIN SW4N60A N-channel TO-220F MOSFET BVDSS : 600V Features TO-220F ID : 4.0A High ruggedness RDS(ON) : 2.2ohm RDS(ON) (Max 2.2 )@VGS=10V Gate Charge (Typ 22nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN

 0.290. Size:791K  samwin
sw4n60v.pdf

4N60 4N60

SW4N60VSW4N60VSAMWINN-channel MOSFETIPAK DPAKBVDSS : 600VFeaturesID : 4.0A High ruggednessRDS(ON) : 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 27nC)2 Improved dv/dt Capability 1122 100% Avalanche Tested331. Gate 2. Drain 3. Source1General DescriptionThis power MOSFET is produced with advanced super-junction technology

 0.291. Size:851K  samwin
swd4n60da swf4n60da swsi4n60da.pdf

4N60 4N60

SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS : 600V ID : 4A High ruggedness Low RDS(ON) (Typ3.35)@VGS=10V RDS(ON) : 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application:DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou

 0.292. Size:917K  samwin
sw4n60b.pdf

4N60 4N60

SAMWIN SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET TO-220F TO-251 TO-252 BVDSS : 600V Features ID : 4A High ruggedness RDS(ON) : 2.5 RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typ 11nC) 1 Improved dv/dt Capability 1 2 2 1 3 2 100% Avalanche Tested 3 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produce

 0.293. Size:916K  samwin
swf4n60d swy4n60d swi4n60d swsi4n60d swmi4n60d swd4n60d.pdf

4N60 4N60

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS : 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID : 4A High ruggedness Low RDS(ON) (Typ 1.9) RDS(ON) : 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

 0.294. Size:371K  samwin
sw4n60.pdf

4N60 4N60

SW4N60SAMWINN-channel MOSFETBVDSS : 600VFeaturesTO-220F TO-220ID : 4.0A High ruggednessRDS(ON) : 2.2ohm RDS(ON) (Max 2.2 )@VGS=10V Gate Charge (Typ 30nC) Improved dv/dt Capability 1 122 2 100% Avalanche Tested3 31. Gate 2. Drain 3. Source1General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.3This

 0.295. Size:650K  samwin
sw4n60k.pdf

4N60 4N60

SAMWIN SW4N60K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251 TO-252 ID : 4A High ruggedness RDS(ON) : 1.15 RDS(ON) (Max 1.15)@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced

 0.296. Size:610K  samwin
swi4n60dc swd4n60dc.pdf

4N60 4N60

SW4N60DC N-channel Enhancement mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS : 600V ID : 4A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10V RDS(ON) : 2.0 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 2 3 3 Application: LED,Charger 1 1. Gate 2. Drain 3. Source 3 General Descrip

 0.297. Size:305K  sanrise-tech
srm4n60.pdf

4N60 4N60

Datasheet 4A, 600V, N-Channel Power MOSFET SRM4N60General Description Symbol The Sanrise SRM4N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 0.298. Size:406K  semihow
hfp4n60f hfs4n60f.pdf

4N60 4N60

Oct 2016HFP4N60F / HFS4N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC RoHS CompliantHFP4N60F HFS4N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 0.299. Size:177K  semihow
hfs4n60.pdf

4N60 4N60

July 2005BVDSS = 600 VRDS(on) typ HFS4N60ID = 4.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(

 0.300. Size:369K  semihow
hfs4n60fs.pdf

4N60 4N60

Oct 2016HFS4N60FS600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC Single Gauge PackageTO-220FS SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter

 0.301. Size:1222K  sipower
hx4n60.pdf

4N60 4N60

 0.302. Size:571K  trinnotech
tmp4n60 tmpf4n60.pdf

4N60 4N60

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

 0.303. Size:618K  trinnotech
tmp4n60az tmpf4n60az.pdf

4N60 4N60

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

 0.304. Size:317K  trinnotech
tmd4n60 tmu4n60.pdf

4N60 4N60

TMD4N60/TMU4N60TMD4N60G/TMU4N60GVDSS = 660 V @TjmaxFeaturesID = 4A Low gate chargeRDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationD-PAKDI-PAKGSDevice Package Marking RemarkTMD4N60/TMU4N60 D-PAK/I-PAK TMD4N60/TMU4N60 RoHSTMD4N60G/TMU4N60G D-PAK/I-PAK

 0.305. Size:464K  trinnotech
tmd4n60az tmu4n60az.pdf

4N60 4N60

TMD4N60AZ(G)/TMU4N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

 0.306. Size:1096K  truesemi
tsp4n60m tsf4n60m.pdf

4N60 4N60

TSP4N60M/TSF4N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

 0.307. Size:321K  ubiq
qm04n60f.pdf

4N60 4N60

QM04N60F 1 2011-11-15 - 1 -N-Ch 600V Fast Switching MOSFETsGeneral Description Product SummeryThe QM04N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 2.0 4Amost of the synchronous buck converterapplications . Applications The QM04N60F meet the RoHS and G

 0.308. Size:670K  way-on
wml14n60c4 wmk14n60c4 wmm14n60c4 wmn14n60c4 wmp14n60c4 wmo14n60c4.pdf

4N60 4N60

WML1 MM14N60C14N60C4, WMK14N60C4, WM C4 WMN14N60C4, WMP14N60C4, WM C4 MO14N60C 600V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 0.309. Size:351K  wuxi china
cs4n60a4tdy.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A4TDY General Description VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.310. Size:344K  wuxi china
cs4n60fa9tdy.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.311. Size:317K  wuxi china
cs4n60a3hd.pdf

4N60 4N60

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N60 A3HD General Description VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 0.312. Size:234K  wuxi china
cs4n60a7hd.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A7HD General Description VDSS 600 V CS4N60 A7HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.313. Size:356K  wuxi china
cs4n60a3tdy.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A3TDY General Description VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.314. Size:343K  wuxi china
cs4n60arrd.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 ARRD General Description VDSS 600 V CS4N60 ARRD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.315. Size:315K  wuxi china
cs4n60fa9r.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.316. Size:220K  wuxi china
cs4n60a3r.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A3R General Description VDSS 600 V CS4N60 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.317. Size:277K  wuxi china
cs4n60a4r.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A4R General Description VDSS 600 V CS4N60 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.318. Size:333K  wuxi china
cs4n60a4hd.pdf

4N60 4N60

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N60 A4HD General Description VDSS 600 V CS4N60 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 0.319. Size:221K  wuxi china
cs4n60a8hd.pdf

4N60 4N60

Silicon N-Channel Power MOSFET R CS4N60 A8HD General Description VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.321. Size:704K  convert
cs4n60f cs4n60p cs4n60u cs4n60d.pdf

4N60 4N60

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N60F,CS4N60P,CS4N60U,CS4N60D600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N60F TO-220F

 0.322. Size:702K  convert
csfr4n60f csfr4n60p csfr4n60u csfr4n60d.pdf

4N60 4N60

CSFR4N60F,CSFR4N60PnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR4N60U,CSFR4N60D600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Ma

 0.323. Size:4499K  first semi
fir4n60bpg.pdf

4N60 4N60

FIR4N60BPG N-Channel Super Junction Power MOSFET-YPIN Connection TO-251General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.G D SFeatures New

 0.324. Size:2125K  first semi
fir4n60fg.pdf

4N60 4N60

FIR4N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FGeneral Description FIR4N60FG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

 0.325. Size:2769K  first semi
fir4n60lg.pdf

4N60 4N60

FIR4N60LGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR4N60LG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The1improved planar stripe cell and the improved guard ring 3terminal have been especially tailored to minimize on-state resistance, provi

 0.326. Size:948K  huake
smf4n60.pdf

4N60 4N60

SMF4N60600V N-Channnel MOSFETFeatures 4.0A, 600V, R =2.1@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

 0.327. Size:1293K  lonten
lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf

4N60 4N60

LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate

 0.328. Size:1028K  lonten
lnc4n60 lnd4n60 lng4n60 lnh4n60.pdf

4N60 4N60

LNC4N60\LND4N60\LNG4N60\LNH4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.4 superior switching performance and high avalance Qg,typ 12.8 nC energy. Features Low RDS(on) Low gate charge

 0.329. Size:722K  microne
mem4n60thdg mem4n60thg mem4n60k3g mem4n60a3g.pdf

4N60 4N60

MEM4N60 N-CHANNEL POWER MOSFET MEM4N60 General Description Features 600V4A Switching regulator application. RDS(ON)=2.3@VGS=10V High voltage and high speed. LOW CRSS Switching application. FAST SWITCHING PACKAGE :TO251,TO251S,TO252,TO-220F Pin Configuration MEM4N60THDG MEM4N60THG MEM4N60K3G MEM4N60A3G Maximum Ratings (Ta=25) P

 0.330. Size:352K  cn szxunrui
si4n60.pdf

4N60 4N60

N-CHANNEL MOSFET SI4N604 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONis a high voltage MOSFET and is designed to have better characteristics,The SI4N60such as fast switching time, low gate charge, low on-state resistance and have a highrugged avalanche characteristics. This

 0.331. Size:1946K  cn puolop
ptp4n60 ptf4n60.pdf

4N60 4N60

PTP4 N60/PTF4 N60600V/4 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D S G D STO-220 TO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functio

 0.332. Size:474K  cn puolop
ptd4n60.pdf

4N60 4N60

PTD4N60 N-Channel MOSFETFeatures 2. DrainSymbol RDS(on) (Max 2.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (150C) 3. Source TO-252(D-PAK)213Absolute Maximum RatingsSymbol Par

 0.333. Size:853K  cn vbsemi
spu04n60c3.pdf

4N60 4N60

SPU04N60C3www.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650RequirementRoHSRDS(on) ()VGS = 10 V 2.0COMPLIANT Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compli

 0.334. Size:543K  cn wuxi unigroup
tma4n60h tmu4n60h tmd4n60h tmp4n60h.pdf

4N60 4N60

TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf

 0.335. Size:1050K  cn hmsemi
hm4n60.pdf

4N60 4N60

N RN-CHANNEL MOSFET HM4N60 Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.4 @Vgs=10V13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 0.336. Size:460K  cn hmsemi
hm4n60 hm4n60f.pdf

4N60 4N60

HM4N60 / HM4N60FHM4N60 / HM4N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching

 0.337. Size:753K  cn hmsemi
hm4n60k hm4n60i.pdf

4N60 4N60

HM4N60K / HM4N60IHM4N60K / HM4N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

 0.338. Size:244K  inchange semiconductor
spd04n60s5.pdf

4N60 4N60

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

 0.339. Size:226K  inchange semiconductor
4n60as.pdf

4N60 4N60

isc N-Channel MOSFET Transistor 4N60ASDESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0)

 0.340. Size:247K  inchange semiconductor
spp04n60s5.pdf

4N60 4N60

isc N-Channel MOSFET Transistor SPP04N60S5ISPP04N60S5FEATURESStatic drain-source on-resistance:RDS(on) 0.95Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUT

 0.341. Size:247K  inchange semiconductor
spp24n60c3.pdf

4N60 4N60

isc N-Channel MOSFET Transistor SPP24N60C3ISPP24N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.16Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductanceABSO

 0.342. Size:262K  inchange semiconductor
aod4n60.pdf

4N60 4N60

Isc N-Channel MOSFET Transistor AOD4N60FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

 0.343. Size:273K  inchange semiconductor
dmg4n60sj3.pdf

4N60 4N60

isc N-Channel MOSFET Transistor DMG4N60SJ3FEATURESDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 0.344. Size:327K  inchange semiconductor
ndd04n60z-1g.pdf

4N60 4N60

isc N-Channel MOSFET Transistor NDD04N60Z-1GFEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive

 0.345. Size:248K  inchange semiconductor
spp04n60c3.pdf

4N60 4N60

isc N-Channel MOSFET Transistor SPP04N60C3ISPP04N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.95Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 0.346. Size:258K  inchange semiconductor
spb04n60c3.pdf

4N60 4N60

Isc N-Channel MOSFET Transistor SPB04N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 0.347. Size:208K  inchange semiconductor
spu04n60c3.pdf

4N60 4N60

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPU04N60C3FEATURESWith To-251(IPAK) packageNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsA

 0.348. Size:274K  inchange semiconductor
aou4n60.pdf

4N60 4N60

isc N-Channel MOSFET Transistor AOU4N60FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 0.349. Size:244K  inchange semiconductor
spw24n60cfd.pdf

4N60 4N60

isc N-Channel MOSFET Transistor SPW24N60CFDISPW24N60CFDFEATURESStatic drain-source on-resistance:RDS(on)185mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 0.350. Size:261K  inchange semiconductor
aot4n60.pdf

4N60 4N60

isc N-Channel MOSFET Transistor AOT4N60FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 0.351. Size:244K  inchange semiconductor
spw24n60c3.pdf

4N60 4N60

isc N-Channel MOSFET Transistor SPW24N60C3ISPW24N60C3FEATURESStatic drain-source on-resistance:RDS(on)160mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 0.352. Size:247K  inchange semiconductor
spp24n60cfd.pdf

4N60 4N60

isc N-Channel MOSFET Transistor SPP24N60CFDISPP24N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.185Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)

 0.353. Size:361K  inchange semiconductor
fch104n60.pdf

4N60 4N60

isc N-Channel MOSFET Transistor FCH104N60FEATURESWith TO-247 packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 104m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 0.354. Size:227K  inchange semiconductor
fcp104n60f.pdf

4N60 4N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP104N60FFEATURESStatic drain-source on-resistance:RDS(on) 104mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONLightingAC-DC Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dra

 0.355. Size:260K  inchange semiconductor
dmg4n60sct.pdf

4N60 4N60

isc N-Channel MOSFET Transistor DMG4N60SCTFEATURESDrain Current I = 4.5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 0.356. Size:245K  inchange semiconductor
spd04n60c3.pdf

4N60 4N60

isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 0.357. Size:258K  inchange semiconductor
spb04n60s5.pdf

4N60 4N60

Isc N-Channel MOSFET Transistor SPB04N60S5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 0.358. Size:202K  inchange semiconductor
aotf4n60.pdf

4N60 4N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOTF4N60FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

 0.359. Size:261K  inchange semiconductor
spu04n60s5.pdf

4N60 4N60

isc N-Channel MOSFET Transistor SPU04N60S5FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 0.360. Size:266K  inchange semiconductor
dmg4n60sk3.pdf

4N60 4N60

isc N-Channel MOSFET Transistor DMG4N60SK3FEATURESDrain Current I = 3.7A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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