All MOSFET. 4N60 Datasheet

 

4N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 4N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 106 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

Package: TO-263, TO-262, TO-251, TO-252, TO-220, TO-220F, DFN-8

4N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

4N60 Datasheet (PDF)

0.1. 4n60cb.pdf Size:224K _1

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UNISONIC TECHNOLOGIES CO., LTD 4N60-CB Power MOSFET 4.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

0.2. ndf04n60z ndp04n60z ndd04n60z.pdf Size:148K _1

4N60
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NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features http://onsemi.com • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested VDSS RDS(ON) (TYP) @ 2 A • These Devices are Pb-Free and are RoHS Compliant 600 V 1.8 Ω Applications • Adapter (Notebook, Printer, Gaming) • LCD Panel Power • Lighting Ballasts 4 ABSOLUTE MAXIMUM RATINGS

 0.3. jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf Size:1019K _1

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N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N60B 封装 Package 主要参数 MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson(Vgs=10V) 2.4Ω 13.3nC Qg APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电源 based on half bridge UPS 产品特性

0.4. svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf Size:801K _1

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SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc

 0.5. spd04n60s5 spu04n60s5.pdf Size:268K _1

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SPU04N60S5 SPD04N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 0.95 Ω • New revolutionary high voltage technology ID 4.5 A • Ultra low gate charge P-TO252. P-TO251. • Periodic avalanche rated • Extreme dv/dt rated 2 3 • Ultra low effective capacitances 3 1 2 1 • Improved transconductance Type Package Ordering Code Marking 04N60S5 SPU04N60S5 P-T

0.6. mgp4n60erev0.pdf Size:124K _motorola

4N60
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP4N60E/D Designer's Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulate

0.7. mgp14n60erev0.pdf Size:125K _motorola

4N60
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP14N60E/D Designer's Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insula

0.8. mgp4n60ed.pdf Size:150K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP4N60ED/D Designer's Data Sheet MGP4N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode

0.9. mgp4n60e.pdf Size:125K _motorola

4N60
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP4N60E/D Designer's Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulate

0.10. mgw14n60ed.pdf Size:154K _motorola

4N60
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW14N60ED/D Designer's Data Sheet MGW14N60ED Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insu

0.11. phx4n60e.pdf Size:83K _philips

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Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 2.4 A g • Isolated package RDS(ON) ≤ 2.5 Ω s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh

0.12. php4n60e phb4n60e.pdf Size:80K _philips

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Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 4.5 A g • Low thermal resistance RDS(ON) ≤ 2.5 Ω s GENERAL DESCRIPTION N-channel, enh

0.13. stf24n60dm2.pdf Size:815K _st

4N60
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STF24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features VDS @ RDS(on) Order code ID TJmax max STF24N60DM2 650 V 0.20 Ω 18 A • Fast-recovery body diode • Extremely low gate charge and input 3 2 1 capacitance TO-220FP • Low on-resistance • 100% avalanche tested • Extremely high dv/dt rugg

0.14. stb24n60dm2 stp24n60dm2 stw24n60dm2.pdf Size:1195K _st

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STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB VDS @ RDS(on) 2 Order codes ID 3 TJmax max 1 3 STB24N60DM2 D2PAK 2 1 STP24N60DM2 650 V 0.20 Ω 18 A TO-220 STW24N60DM2 • Extremely low gate charge and input capacitance 3 2

0.15. stf24n60m2 stfi24n60m2 stfw24n60m2.pdf Size:1364K _st

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STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STF24N60M2 3 2 1 1 STFI24N60M2 650 V 0.19 Ω 18 A 2 3 TO-220FP STFW24N60M2 I2PAKFP (TO-281) • Extremely low gate charge • Lower RDS(on) x area

0.16. stl24n60m2.pdf Size:1287K _st

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STL24N60M2 N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID S(2) Bottom view S(2) S(2) STL24N60M2 650 V 0.21 Ω 18 A G(1) D(3) • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance PowerFLAT

0.17. stb24n60m2 sti24n60m2 stp24n60m2 stw24n60m2.pdf Size:1556K _st

4N60
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STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 2 3 1 STB24N60M2 3 2 1 D2PAK STI24N60M2 I2PAK 650 V 0.19 Ω 18 A STP24N60M2 TAB STW24N60M2 • Extremely low gate charge

0.18. ssp4n60b sss4n60b.pdf Size:888K _fairchild_semi

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SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 14 pF) This advanced technology has been especially tailored to • Fast switchi

0.19. fdpf4n60nz.pdf Size:579K _fairchild_semi

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November 2013 FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 8.3 nC) technology. This advanced MOSFET family has the smallest • Low Crss (Typ. 3.7 pF) on

0.20. fqa24n60.pdf Size:671K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQA24N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 23.5A, 600V, RDS(on) = 0.24 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 110 nC) planar stripe, DMOS technology. • Low Crss ( typical 56 pF) This advanced technology has be

0.21. fcd4n60.pdf Size:922K _fairchild_semi

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December 2008 TM SuperFET FCD4N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 1.0Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.

0.22. fcp4n60.pdf Size:912K _fairchild_semi

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December 2008 TM SuperFET FCP4N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 1.0Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.

0.23. fch104n60f f085.pdf Size:629K _fairchild_semi

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November 2014 FCH104N60F_F085 N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 mΩ D Features Typical RDS(on) = 91 mΩ at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new For current package dr

0.24. fdd4n60nz.pdf Size:607K _fairchild_semi

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November 2013 FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features Description • RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 8.3 nC) technology. This advanced MOSFET family has the smallest • Low Crss (Typ. 3.7 pF) on-

0.25. fcp104n60f.pdf Size:652K _fairchild_semi

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December 2013 FCP104N60F N-Channel SuperFET® ll FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new • 650 V @ TJ = 150°C high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 91 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 110 nC

0.26. fch104n60.pdf Size:765K _fairchild_semi

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June 2014 FCH104N60 N-Channel SuperFET® II MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 63 nC) and lower

0.27. fcp104n60.pdf Size:797K _fairchild_semi

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June 2014 FCP104N60 N-Channel SuperFET® II MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 63 nC) and lower

0.28. fcd4n60tf fcd4n60tm.pdf Size:478K _fairchild_semi

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October 2013 FCD4N60 N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2  Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 1.0  utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 12.8 nC) resistance

0.29. fqpf4n60.pdf Size:549K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQPF4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has been e

0.30. fqp4n60.pdf Size:527K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQP4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has been es

0.31. fch104n60f.pdf Size:573K _fairchild_semi

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December 2013 FCH104N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 98 mΩ charge balance technology for outstanding low on-resistance and lower gate charge performance. This techn

0.32. ssi4n60b ssi4n60b ssw4n60b.pdf Size:644K _fairchild_semi

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November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 14 pF) This advanced technology has been especially tailored to

0.33. mtp4n60.pdf Size:57K _njs

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0.34. sss4n60as.pdf Size:501K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

0.35. ssp4n60as.pdf Size:912K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

0.36. ssw4n60a.pdf Size:503K _samsung

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 Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) : 2.037 Ω (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

0.37. ssr4n60a.pdf Size:501K _samsung

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 Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

0.38. irfs8xx irfs9xxx sss4n60 sss6n60.pdf Size:26K _samsung

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0.39. sihh14n60e.pdf Size:152K _vishay

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SiHH14N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Fully lead (Pb)-free device VDS (V) at TJ max. 650 • Low figure-of-merit (FOM) Ron x Qg RDS(on) typ. (Ω) at 25 °C VGS = 10 V 0.220 • Low input capacitance (Ciss) Qg max. (nC) 82 • Reduced switching and conduction losses Qgs (nC) 8 Qgd (nC) 16 • Ultra low gate charge (Qg) Confi

0.40. skb04n60g.pdf Size:1148K _infineon

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SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • NPT-Technology for 600V applications offers: - very tight

0.41. ikd04n60r.pdf Size:1802K _infineon

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IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60R, IKU04N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD04N60R, IKU04N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (R

0.42. spd04n60c3 spu04n60c3.pdf Size:744K _infineon

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 VDS Tjmax Ω • • G G • • • • G G

0.43. sgd04n60.pdf Size:339K _infineon

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 SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses C • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25

0.44. spp04n60s5.pdf Size:365K _infineon

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SPP04N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 0.95 Ω • New revolutionary high voltage technology ID 4.5 A • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated • Ultra low effective capacitances 3 2 1 • Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 04N60S5 SPP04N60S5 PG-TO220 Q67040-S

0.45. sps04n60c3.pdf Size:620K _infineon

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 S VDS Tjmax Ω • • G -3-11 • • • • Marking S G 1-3-11

0.46. spw24n60cfd.pdf Size:678K _infineon

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SPW24N60CFD TM CססIMOSTM "9@/; %;+8<3<=9; ";9.>-= $>77+;B Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0.185 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 21.7 A D V 2 AIG6 ADL <6I: 8=6G<: V "MIG:B: 9v /dt G6I:9 /d PG‐TO247 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 688DG9>C< ID '"!" H 996 !$ ./<318/. 09; V 0D;IHL>I8=>C< -4* 0I6<:H V ) ! /

0.47. spp04n60c3 spa04n60c3.pdf Size:588K _infineon

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 VDS Tjmax Ω • • G FP G • • 3 • 2 1 P-TO220-3-31 • • G ;-3-111

0.48. skp04n60.pdf Size:396K _infineon

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SKP04N60 SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness,

0.49. ikp04n60t.pdf Size:1017K _infineon

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IKP04N60T TrenchStop® Series pIJIKI04N60Tdsadsa Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Very low VCE(sat) 1.5 V (typ.) C • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5μs • Designed for : G E - Frequency Converters - Drives • TrenchStop® and Fie

0.50. sgb04n60.pdf Size:784K _infineon

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 SGB04N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G • Designed for: E - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switchi

0.51. spb04n60c3.pdf Size:423K _infineon

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 VDS Tjmax Ω • • G • • • • G

0.52. sgb04n60 .pdf Size:786K _infineon

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 SGB04N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G • Designed for: E - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switchi

0.53. spp24n60cfd.pdf Size:539K _infineon

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SPP24N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS • Intrinsic fast-recovery body diode R 0.185 DS(on),max • Extremely low reverse recovery charge I 21.7 A D • Ultra low gate charge PG-TO220 • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • CoolMOS CFD designed

0.54. iku04n60r.pdf Size:1802K _infineon

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IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60R, IKU04N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD04N60R, IKU04N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (R

0.55. skb04n60.pdf Size:1143K _infineon

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SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • NPT-Technology for 600V applications offers: - very tight

0.56. sgp04n60.pdf Size:339K _infineon

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 SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses C • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25

0.57. ikd04n60rf.pdf Size:1856K _infineon

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IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Data sheet Industrial Power Control IKD04N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applica

0.58. ikd04n60rf 1 1.pdf Size:1651K _infineon

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IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Datasheet Industrial & Multimarket IKD04N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applicat

0.59. ikd04n60ra.pdf Size:2329K _infineon

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IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60RA 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD04N60RA TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 6

0.60. spp24n60c3.pdf Size:345K _infineon

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4N60

SPP24N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.16 Ω • New revolutionary high voltage technology ID 24.3 A • Worldwide best RDS(on) in TO 220 PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPP24N60C3 P

0.61. iki04n60t.pdf Size:1017K _infineon

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4N60

IKP04N60T TrenchStop® Series pIJIKI04N60Tdsadsa Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Very low VCE(sat) 1.5 V (typ.) C • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5μs • Designed for : G E - Frequency Converters - Drives • TrenchStop® and Fie

0.62. spb04n60s5.pdf Size:360K _infineon

4N60
4N60

SPB04N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 0.95 Ω • New revolutionary high voltage technology ID 4.5 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPB04N60S5 PG-TO263 Q67040-S4201 04N60S5 Maximum Ratings Par

0.63. spw24n60c3.pdf Size:807K _infineon

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4N60

SPW24N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.16 Ω • New revolutionary high voltage technology ID 24.3 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPW24N60C3 PG-TO247 Q67040-S4640 24N60C3 Maximum Rati

0.64. sgp04n60 sgd04n60g.pdf Size:342K _infineon

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4N60

 SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses C • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25

0.65. ikp04n60t iki04n60t.pdf Size:561K _infineon

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4N60

IKP04N60T TrenchStop® Series pIJIKI04N60Tdsadsa Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Very low VCE(sat) 1.5 V (typ.) C • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5μs • Designed for : G E - Frequency Converters - Drives • TrenchStop® and Fieldstop techno

0.66. ixga24n60c.pdf Size:98K _ixys

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4N60

HiPerFASTTM IGBT IXGA 24N60C VCES = 600 V IXGP 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C48 A IC110 TC = 110°C24 A TO-263 AA (IXGA) ICM TC

0.67. ixgh64n60b3.pdf Size:163K _ixys

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4N60

Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30

0.68. ixsp24n60b.pdf Size:68K _ixys

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4N60

IXSP 24N60B VCES = 600 V High Speed IGBT IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability tfi typ = 170 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXSP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C48 A IC90 TC = 90°C24 A G = Gate

0.69. ixgp24n60c.pdf Size:98K _ixys

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4N60

HiPerFASTTM IGBT IXGA 24N60C VCES = 600 V IXGP 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C48 A IC110 TC = 110°C24 A TO-263 AA (IXGA) ICM TC

0.70. ixgp24n60c4.pdf Size:92K _ixys

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Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 ≤ ≤ VCE(sat) ≤ 2.70V ≤ ≤ tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IX

0.71. ixgt24n60cd1.pdf Size:101K _ixys

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IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C48 A TO-247 AD (IXGH) IC110 TC = 110°C24 A

0.72. ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf Size:141K _ixys

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4N60

IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) ≤ 2.0 Ω ≤ Ω ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V TO-220 (IXTP) VGSS Continuous ±30 V VGSM Transient ±40 V

0.73. ixfc14n60p.pdf Size:229K _ixys

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4N60

IXFC 14N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 8 A Power MOSFET ≤ Ω RDS(on) ≤ 630 mΩ ≤ Ω ≤ Ω ≤ Ω ISOPLUS220TM ≤ trr ≤ 200 ns ≤ ≤ ≤ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25° C to 150° C 600 V VDGR TJ

0.74. ixfp14n60p3.pdf Size:180K _ixys

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4N60

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 540mΩ ≤ Ω ≤ Ω IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

0.75. ixgp24n60c4d1.pdf Size:84K _ixys

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Preliminary Technical Information VCES = 600V High-Gain IGBT IXGP24N60C4D1 IC110 = 24A w/ Diode ≤ ≤ VCE(sat) ≤ 2.70V ≤ ≤ tfi(typ) = 44ns High-Speed PT Trench IGBT TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C Tab E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G = Gate C = Collector

0.76. ixfx44n60 ixfk44n60.pdf Size:104K _ixys

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4N60

HiPerFETTM IXFX 44N60 VDSS = 600 V IXFK 44N60 ID25 = 44 A Power MOSFETs RDS(on) = 130 mW Single MOSFET Die trr £ 250 ns PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V (TAB) G VGS Continuous ±20 V D VGSM Transient ±30 V ID25 TC = 25°C44 A TO-264 AA (IXFK) IDM TC = 25°C, pulse width limite

0.77. ixgt64n60a3.pdf Size:192K _ixys

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Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C (TAB) C IC11

0.78. ixfk64n60p ixfx64n60p.pdf Size:169K _ixys

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IXFK 64N60P VDSS = 600 V PolarHVTM HiPerFET IXFX 64N60P ID25 = 64 A Power MOSFET ≤ Ω RDS(on) ≤ 96 mΩ ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode ≤ trr ≤ 200 ns ≤ ≤ ≤ Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Contin

0.79. ixgh34n60b2.pdf Size:36K _ixys

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Advance Technical Data VCES = 600 V IXGH 34N60B2 HiPerFASTTM IGBT IC25 = 70 A VCE(sat) < 1.55 V Optimized for 10-25 KHz hard tfi typ = 150 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by lea

0.80. ixfr64n60p.pdf Size:151K _ixys

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VDSS = 600 V PolarHVTM HiPerFET IXFR 64N60P ID25 = 36 A Power MOSFET ≤ Ω RDS(on) ≤ 105 mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200 ns ≤ ≤ ≤ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 15

0.81. ixsh24n60bd1.pdf Size:100K _ixys

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IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 (D3) ( IXST) IC25 TC

0.82. ixgt24n60c.pdf Size:52K _ixys

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IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C48 A TO-247 AD (IXGH) IC110 TC = 110°

0.83. ixgh24n60c4.pdf Size:92K _ixys

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Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 ≤ ≤ VCE(sat) ≤ 2.70V ≤ ≤ tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IX

0.84. ixga24n60c4.pdf Size:128K _ixys

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Advance Technical Information High-Gain IGBTs VCES = 600V IXGA24N60C4 IC110 = 24A IXGP24N60C4 ≤ ≤ VCE(sat) ≤ 2.70V ≤ ≤ IXGH24N60C4 tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G C C (

0.85. ixgx64n60b3d1.pdf Size:180K _ixys

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4N60

VCES = 600V GenX3TM 600V IGBT IXGK64N60B3D1 IC110 = 64A with Diode IXGX64N60B3D1 ≤ VCE(sat) ≤ ≤£ 1.8V ≤ ≤ Medium speed low Vsat PT tfi(typ) = 88ns IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C (TAB) E VGEM Transient ±30 V IC110

0.86. ixta14n60p ixtq14n60p ixtp14n60p.pdf Size:147K _ixys

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4N60

IXTA 14N60P VDSS = 600 V PolarHVTM IXTP 14N60P ID25 = 14 A Power MOSFET ≤ Ω IXTQ 14N60P RDS(on) ≤ 550 mΩ ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V G VGS Continuous ±30 V S (TAB) VGSM Tranisent ±40 V ID25 TC = 25°C14 A

0.87. ixga24n60c ixgp24n60c.pdf Size:100K _ixys

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4N60

HiPerFASTTM IGBT IXGA 24N60C VCES = 600 V IXGP 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C48 A IC110 TC = 110°C24 A TO-263 AA (IXGA) ICM TC

0.88. ixst24n60bd1.pdf Size:100K _ixys

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IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 (D3) ( IXST) IC25 TC

0.89. ixsh24n60a.pdf Size:110K _ixys

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Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G TAB C VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ±20 V VGEM Transient ±30 V G = Gate C = Collector IC25 TC = 25°C 48 A E = Em

0.90. ixgh24n60b.pdf Size:137K _ixys

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4N60

IXGH 24N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 48 A VCE(sat) = 2.3 V tfi = 80 ns Preliminary Data TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G IC25 TC = 25°C48 A C E IC90 TC = 90°C24 A G = Gate, C = Collector, ICM TC = 25°C, 1 ms 96 A

0.91. ixgh24n60c4d1.pdf Size:233K _ixys

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4N60

VCES = 600V High-Gain IGBT IXGH24N60C4D1 IC110 = 24A w/ Diode ≤ ≤ VCE(sat) ≤ 2.70V ≤ ≤ tfi(typ) = 68ns High-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C Tab E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G = Gate C = Collector VGEM Transient ±30 V E = Emitter

0.92. ixfn44n60.pdf Size:128K _ixys

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HiPerFETTM IXFN 44N60 VDSS = 600 V Power MOSFETs ID25 = 44 A Single Die MOSFET RDS(on) = 130 mW D trr £ 250 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25°C to 150°C 600 V S VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V G VGS Continuous ±20 V VGSM Transient ±30 V S I

0.93. ixgh24n60c.pdf Size:52K _ixys

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4N60

IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C48 A TO-247 AD (IXGH) IC110 TC = 110°

0.94. ixsh24n60b ixsh24n60bd1 ixst24n60b ixst24n60bd1.pdf Size:102K _ixys

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IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 (D3) ( IXST) IC25 TC

0.95. ixfr44n60.pdf Size:34K _ixys

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HiPerFETTM Power MOSFETs IXFR 44N60 VDSS = 600 V ISOPLUS247TM ID25 = 38 A (Electrically Isolated Back Surface) RDS(on)= 130 mW Single MOSFET Die trr £ 250 ns ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C38 A G = Gate D = Drain

0.96. ixsh24n60u1.pdf Size:36K _ixys

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HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E G = Gate, C = Collector, IC25 TC = 25°C48 A E = Emitter, TAB

0.97. ixgr64n60a3.pdf Size:183K _ixys

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Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGR64N60A3 IC110 = 47A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 5kHz switching ISOPLUS247TM (IXGR) Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G IC110 TC = 11

0.98. ixfa14n60p ixfh14n60p ixfp14n60p.pdf Size:257K _ixys

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4N60

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET ≤ Ω IXFP 14N60P RDS(on) ≤ 550 mΩ ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V G VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V S (TAB) VGS Continuous ±30 V V

0.99. ixgt64n60b3.pdf Size:163K _ixys

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Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30

0.100. ixsh24n60 a.pdf Size:111K _ixys

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4N60

Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G TAB C VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ±20 V VGEM Transient ±30 V G = Gate C = Collector IC25 TC = 25°C 48 A E = Em

0.101. ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf Size:163K _ixys

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4N60

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 2.2Ω ≤ Ω ≤ Ω IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V TO-263 AA (IXFA) VDGR TJ = 25°C to 150°C, RG

0.102. ixfa14n60p3 ixfh14n60p3.pdf Size:173K _ixys

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4N60

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 540mΩ ≤ Ω ≤ Ω IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

0.103. ixgr24n60c.pdf Size:54K _ixys

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VCES = 600 V IXGR 24N60C HiPerFASTTM IGBT IC25 = 42 A ISOPLUS247TM VCE(sat) = 2.5 V (Electrically Isolated Back Surface) tfi(typ) = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC =

0.104. ixgh24n60cd1.pdf Size:101K _ixys

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IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C48 A TO-247 AD (IXGH) IC110 TC = 110°C24 A

0.105. ixsh24n60u1 ixsh24n60au1.pdf Size:37K _ixys

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HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E G = Gate, C = Collector, IC25 TC = 25°C48 A E = Emitter, TAB

0.106. ixfn64n60p.pdf Size:148K _ixys

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4N60

VDSS = 600 V IXFN 64N60P PolarHVTM HiPerFET ID25 = 50 A Power MOSFET ≤ Ω RDS(on) ≤ 96 mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200 ns ≤ ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V S

0.107. ixsh24n60b.pdf Size:100K _ixys

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IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 (D3) ( IXST) IC25 TC

0.108. ixgk64n60b3d1.pdf Size:180K _ixys

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4N60

VCES = 600V GenX3TM 600V IGBT IXGK64N60B3D1 IC110 = 64A with Diode IXGX64N60B3D1 ≤ VCE(sat) ≤ ≤£ 1.8V ≤ ≤ Medium speed low Vsat PT tfi(typ) = 88ns IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C (TAB) E VGEM Transient ±30 V IC110

0.109. ixsh24n60au1.pdf Size:36K _ixys

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HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E G = Gate, C = Collector, IC25 TC = 25°C48 A E = Emitter, TAB

0.110. ixgh64n60a3.pdf Size:192K _ixys

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Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C (TAB) C IC11

0.111. ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf Size:155K _ixys

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Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA24N60X Power MOSFET ID25 = 24A IXFP24N60X   RDS(on)    175m     IXFQ24N60X IXFH24N60X N-Channel Enhancement Mode TO-220AB (IXFP) Avalanche Rated TO-263 AA (IXFA) Fast Intrinsic Diode G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

0.112. ixsh24n60.pdf Size:110K _ixys

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Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G TAB C VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ±20 V VGEM Transient ±30 V G = Gate C = Collector IC25 TC = 25°C 48 A E = Em

0.113. ixgh24n60aui.pdf Size:117K _ixys

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4N60

VCES = 600 V IXGH 24N60AU1 HiPerFASTTM IC25 = 48 A IXGH 24N60AU1S IGBT with Diode VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 SMD (24N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C48 A (24N60AU1) IC90 TC = 90°C

0.114. ixst24n60b.pdf Size:100K _ixys

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4N60

IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 (D3) ( IXST) IC25 TC

0.115. mcpf04n60.pdf Size:714K _mcc

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 MCC TM MCDF04N60 Micro Commercial Components Output Characteristics Transfer Characteristics 8 1.0 Ta=25℃ Ta=25℃ Pulsed Pulsed 6V 0.8 6 5.5V 0.6 5V 4 0.4 VGS=4.5V 2 0.2 0 0.0 0 10 20 30 40 50 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V) RDS(ON) VGS —— RDS(ON) ID —— 5 15 Ta=25℃ Ta=25℃ Pulsed Pulsed 4 12 3 9 VGS= 10V

0.116. mcu04n60.pdf Size:449K _mcc

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0.117. mcp04n60.pdf Size:454K _mcc

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0.118. mcd04n60.pdf Size:413K _mcc

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4N60



0.119. ndf04n60z ndp04n60z ndd04n60z.pdf Size:130K _onsemi

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4N60

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features http://onsemi.com • Low ON Resistance • Low Gate Charge • ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 2 A • 100% Avalanche Tested 600 V 2.0 Ω • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) D (

0.120. 4n60z.pdf Size:354K _utc

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4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 1 time, low gate charge, low on-state resistance and have a high TO-220F rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

0.121. 4n60.pdf Size:384K _utc

4N60
4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

0.122. 4n60k.pdf Size:361K _utc

4N60
4N60

UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-220F TO-220F1 The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp

0.123. apt94n60l2c3.pdf Size:168K _apt

4N60
4N60

APT94N60L2C3 Ω 600V 94A 0.035Ω Ω Ω Ω Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance D • Ultra Low Gate Charge, Qg G • Avalanche Energy Rated • TO-264 Max Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT94N60L2C3 UNIT VDSS Drain-Source Voltage 60

0.124. hgtg24n60d.pdf Size:15K _harris_semi

4N60

HGTG24N60D1D Typical Performance Curves (Continued) 1300 TJ = +150oC, TC = +100oC, RGE = 25Ω, L = 500µH 80 1200 VCE = 480V, VGE = 10V 1100 VCE = 480V, VGE = 15V 1000 fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF 900 PC = DUTY FACTOR = 50% 10 800 RθJC = 1.0oC/W VCE = 240V, VGE = 10V 700 VCE = 240V, VGE = 15V 600 VCE = 480V, VGE = 10V, 15V 500 TJ = +150oC VCE = 240V, VG

0.125. ssh4n55 ssh4n60.pdf Size:441K _semelab

4N60
4N60

查询SSH4N55供应商 捷多邦,专业PCB打样工厂,24小时加 急出货

0.126. ssrf4n60.pdf Size:459K _secos

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4N60

SSRF4N60 4A , 600 V , RDS(ON) 2.4 Ω Ω Ω Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION ITO-220 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without B N degrading performance over time. This

0.127. tsm4n60ch tsm4n60ci tsm4n60cp tsm4n60cz.pdf Size:477K _taiwansemi

4N60
4N60

 TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)(Ω) ID (A) 3. Source 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a

0.128. cjb04n60a.pdf Size:333K _jiangsu

4N60
4N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB04N60A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

0.129. cjd04n60b.pdf Size:267K _jiangsu

4N60
4N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed 1. GATE for

0.130. cjpf04n60a.pdf Size:315K _jiangsu

4N60
4N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

0.131. cjd04n60.pdf Size:640K _jiangsu

4N60
4N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD04N60 N-Channel Power MOSFET TO-251 General Description 1. GATE This advanced high voltage MOSFET is designed to wighstand 2. DRAIN 3. SOURCE high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery

0.132. cju04n60a.pdf Size:307K _jiangsu

4N60
4N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60A N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

0.133. cju04n60.pdf Size:411K _jiangsu

4N60
4N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60 600V N-Channel Power MOSFET TO-252-2L General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high

0.134. cjpf04n60.pdf Size:501K _jiangsu

4N60
4N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60 600V N-Channel Power MOSFET TO-220F General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode wigh fast 2. DRAIN 3. SOURCE 1 2 3

0.135. cjp04n60.pdf Size:553K _jiangsu

4N60
4N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60 600V N-Channel Power MOSFET TO-220-3L General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast 1. GATE recovery time. Desigh

0.136. cjd04n60a.pdf Size:421K _jiangsu

4N60
4N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60A N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

0.137. cjp04n60a.pdf Size:325K _jiangsu

4N60
4N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60A N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

0.138. kf4n60d.pdf Size:385K _kec

4N60
4N60

KF4N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode power supp

0.139. kf4n60f.pdf Size:382K _kec

4N60
4N60

KF4N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS switching mode power supplies. _ A 10.16 0.2 + _ B 15.8

0.140. apt94n60l2c3g.pdf Size:250K _microsemi

4N60
4N60

APT94N60L2C3 Ω 600V 94A 0.035Ω Ω Ω Ω Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg D • Avalanche Energy Rated • TO-264 Max Package G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. It

0.141. 4n60d 4n60f 4n60i 4n60p.pdf Size:794K _wietron

4N60
4N60

4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 4 AMPERES DRAIN SOURCE VOLTAGE Description: 600 VOLTAGE The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high

0.142. h04n60.pdf Size:123K _hsmc

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4N60

Spec. No. : MOS200404 HI-SINCERITY Issued Date : 2004.07.01 Revised Date :2010.10.14 MICROELECTRONICS CORP. Page No. : 1/6 H04N60 Series Pin Assignment H04N60 Series Tab 3-Lead Plastic TO-263 Package Code: U N-Channel Power Field Effect Transistor (600V, 4A) Pin 1: Gate Pin 2 & Tab: Drain 3 2 Pin 3: Source 1 Description Tab 3-Lead Plastic TO-220AB This advanced

0.143. aod4n60.pdf Size:376K _aosemi

4N60
4N60

AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150℃ process that is designed to deliver high levels of ID (at VGS=10V) 4A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 2.3Ω applications.By providing low RDS(on), Ciss and Cr

0.144. aou4n60.pdf Size:376K _aosemi

4N60
4N60

AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150℃ process that is designed to deliver high levels of ID (at VGS=10V) 4A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 2.3Ω applications.By providing low RDS(on), Ciss and Cr

0.145. aot4n60.pdf Size:252K _aosemi

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4N60

AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 2.2Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

0.146. aotf4n60.pdf Size:252K _aosemi

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4N60

AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 2.2Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

0.147. aowf4n60.pdf Size:302K _aosemi

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4N60

AOWF4N60 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOWF4N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 2.3Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche cap

0.148. aoi4n60.pdf Size:376K _aosemi

4N60
4N60

AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150℃ process that is designed to deliver high levels of ID (at VGS=10V) 4A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 2.3Ω applications.By providing low RDS(on), Ciss and Cr

0.149. ap04n60j.pdf Size:159K _ape

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AP04N60J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 620V D ▼ Fast Switching Characteristic RDS(ON) 2.5Ω ▼ Simple Drive Requirement ID 4A G ▼ RoHS Compliant & Halogen-Free S Description AP04N60 series are from Advanced Power innovated design and G silicon process technology to achieve the low

0.150. ap04n60s-h-hf.pdf Size:55K _ape

4N60
4N60

AP04N60S-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V D ▼ Fast Switching Characteristic RDS(ON) 2.8Ω ▼ Simple Drive Requirement ID 4A G ▼ RoHS Compliant & Halogen-Free S Description AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC con

0.151. ap04n60i.pdf Size:57K _ape

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4N60

AP04N60I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V D ▼ Fast Switching Characteristic RDS(ON) 2.35Ω ▼ Simple Drive Requirement ID 4A G S Description G D AP04N60 series are specially designed as main switching devices for S TO-220CFM(I) universal 90~265VAC off-line AC/DC converter applicat

0.152. ap04n60j-hf.pdf Size:59K _ape

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4N60

AP04N60J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 620V D ▼ Fast Switching Characteristic RDS(ON) 2.5Ω ▼ Simple Drive Requirement ID 4A G ▼ RoHS Compliant & Halogen-Free S Description AP04N60 series are specially designed as main switching devices for G D universal 90~265VAC off-line AC/DC

0.153. ap04n60h-h-hf.pdf Size:55K _ape

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4N60

AP04N60H-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V D ▼ Fast Switching Characteristic RDS(ON) 2.8Ω ▼ Simple Drive Requirement ID 4A G ▼ RoHS Compliant & Halogen-Free S Description AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC con

0.154. aps04n60h-hf.pdf Size:57K _ape

4N60
4N60

APS04N60H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 620V D ▼ Fast Switching Characteristic RDS(ON) 2.5Ω ▼ Simple Drive Requirement ID 4A G ▼ RoHS Compliant & Halogen-Free S Description APS04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC con

0.155. ap04n60i-hf.pdf Size:57K _ape

4N60
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AP04N60I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V D ▼ Fast Switching Characteristic RDS(ON) 2.35Ω ▼ Simple Drive Requirement ID 4A G ▼ RoHS Compliant & Halogen-Free S Description AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC conv

0.156. ap04n60h-hf.pdf Size:55K _ape

4N60
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AP04N60H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V D ▼ Fast Switching Characteristic RDS(ON) 2.5Ω ▼ Simple Drive Requirement ID 4A G ▼ RoHS Compliant & Halogen-Free S Description AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC conve

0.157. ap04n60i-a-hf.pdf Size:59K _ape

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AP04N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 650V D ▼ Fast Switching Characteristic RDS(ON) 2.5Ω ▼ Simple Drive Requirement ID 4A G ▼ RoHS Compliant & Halogen-Free S Description AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC con

0.158. ap04n60r-a-hf.pdf Size:55K _ape

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4N60

AP04N60R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 650V D ▼ Fast Switching Characteristic RDS(ON) 2.5Ω ▼ Simple Drive Requirement ID 4A G ▼ RoHS Compliant & Halogen-Free S Description AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC con

0.159. aps04n60h.pdf Size:198K _ape

4N60
4N60

APS04N60H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 620V D ▼ Fast Switching Characteristic RDS(ON) 2.5Ω ▼ Simple Drive Requirement ID 4A G ▼ RoHS Compliant & Halogen-Free S Description APS04N60 series are from Advanced Power innovated design and G silicon process technology to achieve the l

0.160. ftu04n60a ftd04n60a.pdf Size:530K _ark-micro

4N60
4N60

FTU04N60A/FTD04N60A 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.0Ω 4.5A  Low ON Resistance  Low Gate Charge (typical 20nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power Ordering Information P

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4N60

FTU04N60B/FTD04N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.8Ω 3.6A  Low ON Resistance  Low Gate Charge (typical 14.7nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant/Lead Free  Halogen-free available Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power Ordering Inf

0.162. ftp04n60a fta04n60a.pdf Size:666K _ark-micro

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FTP04N60A/FT A04N60A 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.0Ω 4.5A  Low ON Resistance  Low Gate Charge (typical 20nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power Ordering Information

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4N60
4N60

FTP04N60B/FTA04N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features  Low ON Resistance 600V 2.8 Ω 3.6A  Low Gate Charge (typical 14.7nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power Ordering Information

0.164. afn04n60t220ft afn04n60t220t afn04n60t251t.pdf Size:758K _alfa-mos

4N60
4N60

AFN04N60 Alfa-MOS 600V / 4A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN04N60 is an N-channel enhancement mode Power 600V/2A,RDS(ON)=2.4Ω(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

0.165. sss4n60.pdf Size:1214K _shenzhen

4N60
4N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS4N60 Technology co.,Ltd 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps,600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET ■ DESCRIPTION The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance

0.166. sif4n60d 1.pdf Size:376K _sisemi

4N60
4N60

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANN

0.167. sif4n60c.pdf Size:379K _sisemi

4N60
4N60

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANN

0.168. sif4n60d.pdf Size:380K _sisemi

4N60
4N60

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANN

0.169. sif4n60c 1.pdf Size:382K _sisemi

4N60
4N60

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANN

0.170. jcs4n60f.pdf Size:948K _jilin_sino

4N60
4N60

N lSX:_W:WHe^vfSO{ R N-CHANNEL MOSFET JCS4N60 \ň Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5 @Vgs=10V 27 nC Qg APPLICATIONS (u High efficiency switch

0.171. mtn4n60i3.pdf Size:339K _cystek

4N60
4N60

Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp. Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.8Ω(typ.) MTN4N60I3 ID : 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

0.172. mtn14n60fp.pdf Size:338K _cystek

4N60
4N60

Spec. No. : C715FP Issued Date : 2009.09.16 CYStech Electronics Corp. Revised Date : 2011.03.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 0.55Ω(max.) MTN14N60FP ID : 14A Description The MTN14N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

0.173. mtn4n60afp.pdf Size:315K _cystek

4N60
4N60

Spec. No. : C408FP-B Issued Date : 2010.03.15 CYStech Electronics Corp. Revised Date : 2011.03.29 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) typ: 2.8Ω MTN4N60AFP ID : 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

0.174. mtn4n60fp.pdf Size:286K _cystek

4N60
4N60

Spec. No. : C408FP Issued Date : 2008.09.02 CYStech Electronics Corp. Revised Date :2012.11.20 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN4N60FP ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

0.175. mtn4n60e3.pdf Size:320K _cystek

4N60
4N60

Spec. No. : C408E3 Issued Date : 2010.12.06 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN4N60E3 ID : 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

0.176. mtn4n60j3.pdf Size:357K _cystek

4N60
4N60

Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp. Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.8Ω(typ.) MTN4N60J3 ID : 4A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating package Applications

0.177. mtn4n60ae3.pdf Size:239K _cystek

4N60
4N60

Spec. No. : C408E3-A Issued Date : 2011.01.19 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.8Ω(typ.) MTN4N60AE3 ID : 4A Description The MTN4N60AE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

0.178. 4n60 4n60f.pdf Size:2598K _goford

4N60
4N60

GOFORD 4N60/4N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 600V 2.5Ω 4A This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active p

0.179. sdf04n60 sdp04n60.pdf Size:190K _samhop

4N60
4N60

SDP04N60 SDF04N60 a S mHop Microelectronics C orp. Ver 2.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 600V 4A 2.0 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Mar

0.180. sdu04n60 sdd04n60.pdf Size:155K _samhop

4N60
4N60

Green Product SDU/D04N60 a S mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 600V 4A 2.1 @ VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERIN

0.181. sdf4n60.pdf Size:164K _solitron

4N60



0.182. ssf4n60f.pdf Size:524K _silikron

4N60
4N60

 SSF4N60F Main Product Characteristics: VDSS 600V RDS(on) 1.9Ω(typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery 

0.183. ssf4n60d.pdf Size:518K _silikron

4N60
4N60

 SSF4N60D Main Product Characteristics: VDSS 600V RDS(on) 2.0Ω (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

0.184. ssf4n60.pdf Size:649K _silikron

4N60
4N60

SSF4N60 Features Vdss = 600V ■ Extremely high dv/dt capability Id = 4A ■ Low Gate Charge Qg results in Simple Drive Requirement Rdson = 2.3Ω (typ.)  100% avalanche tested  Gate charge minimized  Very low intrinsic capacitances  Very good manufacturing repeatability Description The SSF4N60 is a new generation of high voltage N–Channel enhancement mode

0.185. ssf4n60g.pdf Size:510K _silikron

4N60
4N60

 SSF4N60G Main Product Characteristics: VDSS 600V RDS(on) 1.85Ω (typ.) ID 4A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

0.186. cs4n60 to-252.pdf Size:152K _can-sheng

4N60

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula

0.187. ftp04n60d fta04n60d.pdf Size:248K _inpower_semi

4N60
4N60

FTP04N60D FTA04N60D N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • Charger 600 V 2.2 Ω 4.0 A • SMPS Standby Power Features: D • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves G G G Ordering Information DS DS TO-220F TO-220 S PART N

0.188. ftp04n60c fta04n60c.pdf Size:255K _inpower_semi

4N60
4N60

FTP04N60C FTA04N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • Charger 600 V 2.2 Ω 4.0 A • SMPS Standby Power Features: D • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves G G G Ordering Information DS DS TO-220F TO-220 S PART

0.189. brf4n60.pdf Size:745K _blue-rocket-elect

4N60
4N60

BRF4N60(BRCS4N60F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

0.190. brd4n60.pdf Size:700K _blue-rocket-elect

4N60
4N60

BRD4N60(BRCS4N60D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

0.191. br4n60.pdf Size:900K _blue-rocket-elect

4N60
4N60

BR4N60(BRCS4N60R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

0.192. bri4n60.pdf Size:799K _blue-rocket-elect

4N60
4N60

BRI4N60(BRCSI4N60I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 晶体管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high e

0.193. l4n60.pdf Size:521K _lrc

4N60
4N60

LESHAN RADIO COMPANY, LTD. L4N60 4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The LRC L4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed 1 switching applications i

0.194. 4n60a 4n60af 4n60g.pdf Size:451K _nell

4N60
4N60

RoHS 4N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal silicon D D device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such

0.195. hfp4n60.pdf Size:208K _shantou-huashan

4N60
4N60

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP4N60 █ APPLICATIONSL TO-220 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation(Tc=25℃)

0.196. cs4n60 a3r.pdf Size:220K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A3R General Description: VDSS 600 V CS4N60 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

0.197. cs4n60 a4r.pdf Size:231K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A4R General Description: VDSS 600 V CS4N60 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

0.198. cs4n60 a3tdy.pdf Size:356K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A3TDY General Description: VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

0.199. cs4n60 a3hd.pdf Size:353K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A3HD General Description: VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.200. cs4n60 a7hd.pdf Size:340K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A7HD General Description: VDSS 600 V CS4N60 A7HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

0.201. cs4n60f a9hd.pdf Size:343K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60F A9HD General Description: VDSS 600 V CS4N60F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

0.202. cs4n60 a4hd.pdf Size:352K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A4HD General Description: VDSS 600 V CS4N60 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.203. cs4n60 a8hd.pdf Size:345K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A8HD General Description: VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.204. cs4n60 arrd.pdf Size:343K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 ARRD General Description: VDSS 600 V CS4N60 ARRD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

0.205. cs4n60f a9r.pdf Size:264K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60F A9R General Description: VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.206. cs4n60 a4tdy.pdf Size:351K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A4TDY General Description: VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.207. cs4n60f a9tdy.pdf Size:344K _crhj

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60F A9TDY General Description: VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25℃) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 Ω planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.208. cm4n60c.pdf Size:144K _jdsemi

4N60
4N60

R CM4N60C 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

0.209. cm4n60.pdf Size:145K _jdsemi

4N60
4N60

R CM4N60 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

0.210. cm4n60c to251.pdf Size:144K _jdsemi

4N60
4N60

R CM4N60C 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

0.211. cm4n60f.pdf Size:128K _jdsemi

4N60
4N60

R CM4N60F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于 LD E 驱动、电源适配器 等各类功率开关电路 2.主要特点 开关速度快 1 通态电阻小,输入电容小 2 3.

0.212. ftk4n60p f d i.pdf Size:171K _first_silicon

4N60
4N60

SEMICONDUCTOR FTK4N60P / F / D / I TECHNICAL DATA Power MOSFET 4 Amps, 600 Volt I : N-CHANNEL POWER MOSFET 1 TO - 251 D : DESCRIPTION 1 TO - 252 The FTK 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche P : characteristics. This power MOSFET is usua

0.213. ndt4n60.pdf Size:2528K _kexin

4N60
4N60

SMD Type MOSFET N-Channel MOSFET NDT4N60 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● VDS (V) = 600V ● ID = 3.9 A (VGS = 10V) ● RDS(ON) < 1.2Ω (VGS = 10V) 0.127 +0.1 ● Low effective output capacitance 0.80-0.1 max + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 2

0.214. kx4n60f.pdf Size:1765K _kexin

4N60
4N60

DIP Type MOSFET N-Channel MOSFET KX4N60F Unit: mm TO-220F ±0.20 ±0.20 ±0.20 2.54 ±0.20 0.70 ■ Features ● VDS (V) = 600V ● ID = 2.4 A (VGS = 10V) ● RDS(ON) < 2.5Ω (VGS = 10V) ±0.20 2.76 D 1.47max ±0.20 0.50 1 2 3 G ±0.20 0.80 2.54typ 2.54typ S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V

0.215. mdf4n60dth.pdf Size:845K _magnachip

4N60
4N60

 MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2Ω General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip’s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 2.2Ω @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

0.216. mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdf Size:1239K _magnachip

4N60
4N60

 MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description Features These N-channel MOSFET are produced using advanced  V = 600V DS MagnaChip’s MOSFET Technology, which provides low on-  I = 4.6A @ V = 10V D GS state resistance, high switching performance and excellent  R ≤ 2.0Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable

0.217. mdd4n60brh mdi4n60bth.pdf Size:842K _magnachip

4N60
4N60

 MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω Ω Ω Ω General Description Features The MDD/I4N60B uses advanced Magnachip’s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) ≤ 2.0Ω @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications

0.218. mdf4n60bth.pdf Size:943K _magnachip

4N60
4N60

 MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description Features These N-channel MOSFET are produced using advanced  V = 600V DS MagnaChip’s MOSFET Technology, which provides low on-  I = 4.6A @ V = 10V D GS state resistance, high switching performance and excellent  R ≤ 2.0Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

0.219. msf4n60.pdf Size:911K _bruckewell

4N60
4N60

MSF4N60 MSF4N60 600V N-Channel MOSFET General Description The MSF4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simpl

0.220. ms4n60c.pdf Size:561K _bruckewell

4N60
4N60

HV MOSFET DIE SPECIFICATION Product Name: BW-MS4N60C Chip Features Front side Back side Chip Size (um) Thickness (um) Pad Size-Gate (um) Pad Size-Source (um) 3,180 * 2,720 350 420 * 520 900 * 1900 Referenced PKG Electrical Ratings TC = 25°Cunless otherwise noted Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V VGS Gate to Source Vol

0.221. ms14n60.pdf Size:375K _bruckewell

4N60
4N60

MS14N60 900V N-Channel MOSFET Description The MS14N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requiremen

0.222. msq4n60.pdf Size:287K _bruckewell

4N60
4N60

 Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ Product Specification PRELIMINARY N-Channel Enhancement Mode Power MOSFET MSQ4N60 ●Description The MSQ4N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which

0.223. msu4n60 s.pdf Size:381K _bruckewell

4N60
4N60

Preliminary MSU4N60_S 600V N-Channel MOSFET Description The MSU4N60_S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features • Originative New Design • V

0.224. msu4n60.pdf Size:694K _bruckewell

4N60
4N60

MSU4N60 600V N-Channel MOSFET Description The MSU4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requireme

0.225. msf14n60.pdf Size:373K _bruckewell

4N60
4N60

MSF14N60 N-Channel Enhancement Mode Power MOSFET Description The MS14N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Sim

0.226. msf4n60l.pdf Size:992K _bruckewell

4N60
4N60

MSF4N60L 600V N-Channel MOSFET Description The MSF4N60L is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requir

0.227. msd4n60.pdf Size:824K _bruckewell

4N60
4N60

MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requireme

0.228. ms4n60.pdf Size:844K _bruckewell

4N60
4N60

MS4N60 N-Channel Enhancement Mode Power MOSFET Description The MS4N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=650V typically @ Tj=150°

0.229. sff4n60.pdf Size:457K _winsemi

4N60
4N60

SFF4N60 SFF4N60 SFF4N60 SFF4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 4A,600V,R (Max 2.2Ω)@V =10V DS(on) GS ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage(V =4000V AC) ISO ■ Maximum Junction Temperature Range(150℃) General Descri

0.230. wff4n60.pdf Size:677K _winsemi

4N60
4N60

WFF4N60 WFF4N60 WFF4N60 WFF4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4A,600V,R (Max 2.5Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(V =4000V AC) ISO � Maximum Junction Temperature Range(150℃) General Descri

0.231. wfd4n60.pdf Size:532K _winsemi

4N60
4N60

WFD4N60 WFD4N60 WFD4N60 WFD4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 4A,600V.R (Max 2.5Ω)@V =10V DS(on) GS ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Descr

0.232. wfu4n60.pdf Size:512K _winsemi

4N60
4N60

WFU4N60 WFU4N60 WFU4N60 WFU4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 4A,600V.R (Max 2.5Ω)@V =10V DS(on) GS ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Descr

0.233. wfd4n60b.pdf Size:532K _winsemi

4N60
4N60

WFD4N60B WFD4N60B WFD4N60B WFD4N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 4A,600V.R (Max 2.4Ω)@V =10V DS(on) GS ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General D

0.234. wfp4n60.pdf Size:445K _winsemi

4N60
4N60

WFP4N60 WFP4N60 WFP4N60 WFP4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 4A,600V,R (Max 2.2Ω)@V =10V DS(on) GS ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage(V =4000V AC) ISO ■ Maximum Junction Temperature Range(150℃) General Descri

0.235. blv4n60.pdf Size:463K _belling

4N60
4N60

 BLV4N60 N-channel Enhancement Mode Power MOSFET 600V DSS • Avalanche Energy Specified BV • Fast Switching RDS(ON) 2.2Ω Ω Ω Ω • Simple Drive Requirements ID 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless

0.236. cmt04n60.pdf Size:341K _champion

4N60
4N60

CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on) efficiently. This new high energy device also offers a Lower Capacitances drain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc

0.237. cs4n60fa9hd.pdf Size:2765K _citcorp

4N60
4N60

CS4N60FA9HD 600V Silicon N-Channel Power MOSFET ■ Features ■ Outline • Fast switching. TO-220F • ESD improved capability. 0.189(4.80) 0.173(4.40) • Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) • Low reverse transfer capacitances. 0.098(2.50) • 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code ■ Mechanical data G D S • Ep

0.238. ctm04n60.pdf Size:123K _crownpo

4N60
4N60

CTM04N60 CTM04N60 Crownpo Technology Crownpo Technology Power MOSFET Features General Description ● Higher Current Rating This advanced high voltage MOSFET is designed to ● Lower RDS(on) withstand high energy in the avalanche mode and switch ● Lower Capacitances efficiently. This new high energy device also offers a ● Lower Total Gate Charge drain-to-source diode with f

0.239. hy4n60t.pdf Size:101K _hy

4N60
4N60

HY4N60T / HY4N60FT 600V / 4.0A 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 • In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S

0.240. hy4n60d.pdf Size:181K _hy

4N60
4N60

HY4N60D / HY4N60M 600V / 4.0A 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS 2 1 1 D G 2 • In compliance with EU RoHs 2002/95/EC Directives G 3 DS3 S Mec

0.241. csi4n60.pdf Size:235K _lzg

4N60
4N60

BRI4N60(CSI4N60) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃

0.242. cs4n60f.pdf Size:170K _lzg

4N60
4N60

BRF4N60(CS4N60F) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃

0.243. cs4n60.pdf Size:237K _lzg

4N60
4N60

BR4N60(CS4N60) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃)

0.244. sw4n60b.pdf Size:917K _samwin

4N60
4N60

SAMWIN SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET TO-220F TO-251 TO-252 BVDSS : 600V Features ID : 4A ■ High ruggedness RDS(ON) : 2.5Ω ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) 1 ■ Improved dv/dt Capability 1 2 2 1 3 2 ■ 100% Avalanche Tested 3 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produce

0.245. sw4n60.pdf Size:371K _samwin

4N60
4N60

SW4N60 SAMWIN N-channel MOSFET BVDSS : 600V Features TO-220F TO-220 ID : 4.0A ■ High ruggedness RDS(ON) : 2.2ohm ■ RDS(ON) (Max 2.2 Ω)@VGS=10V ■ Gate Charge (Typ 30nC) ■ Improved dv/dt Capability 1 1 2 2 2 ■ 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3 This

0.246. sw4n60d.pdf Size:654K _samwin

4N60
4N60

SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251N TO-252 ID : 4A ■ High ruggedness RDS(ON) : 2.2Ω ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge (Typ 18nC) ■ Improved dv/dt Capability 1 2 1 1 2 2 ■ 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produc

0.247. sw4n60k.pdf Size:650K _samwin

4N60
4N60

SAMWIN SW4N60K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251 TO-252 ID : 4A ■ High ruggedness RDS(ON) : 1.15Ω ■ RDS(ON) (Max 1.15Ω)@VGS=10V ■ Gate Charge (Typ 13nC) ■ Improved dv/dt Capability 1 1 1 2 2 2 ■ 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced

0.248. sw4n60v.pdf Size:791K _samwin

4N60
4N60

SW4N60V SW4N60V SAMWIN N-channel MOSFET IPAK DPAK BVDSS : 600V Features ID : 4.0A ■ High ruggedness RDS(ON) : 2.5ohm ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typical 27nC) 2 ■ Improved dv/dt Capability 1 1 2 2 ■ 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced super-junction technology

0.249. sw4n60a.pdf Size:393K _samwin

4N60
4N60

SAMWIN SW4N60A N-channel TO-220F MOSFET BVDSS : 600V Features TO-220F ID : 4.0A ■ High ruggedness RDS(ON) : 2.2ohm ■ RDS(ON) (Max 2.2 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capability 1 2 2 ■ 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN

0.250. srm4n60.pdf Size:305K _sanrise-tech

4N60
4N60

Datasheet 4A, 600V, N-Channel Power MOSFET SRM4N60 General Description Symbol The Sanrise SRM4N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

0.251. hfs4n60.pdf Size:177K _semihow

4N60
4N60

July 2005 BVDSS = 600 V RDS(on) typ HFS4N60 ID = 4.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(

0.252. hx4n60.pdf Size:1222K _sipower

4N60
4N60



0.253. tmp4n60 tmpf4n60.pdf Size:571K _trinnotech

4N60
4N60

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A  Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

0.254. tmd4n60az tmu4n60az.pdf Size:464K _trinnotech

4N60
4N60

TMD4N60AZ(G)/TMU4N60AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.0A < 2.5W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD4N60AZ / TMU4N60AZ D-PAK/I-PAK TMD4N60AZ / TMU4N60AZ RoHS TMD4N

0.255. tmd4n60 tmu4n60.pdf Size:317K _trinnotech

4N60
4N60

TMD4N60/TMU4N60 TMD4N60G/TMU4N60G VDSS = 660 V @Tjmax Features ID = 4A  Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD4N60/TMU4N60 D-PAK/I-PAK TMD4N60/TMU4N60 RoHS TMD4N60G/TMU4N60G D-PAK/I-PAK

0.256. tmp4n60az tmpf4n60az.pdf Size:618K _trinnotech

4N60
4N60

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.0A < 2.5W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMP4N60AZ / TMPF4N60AZ TO-220 / TO-220F TMP4N60AZ / TMPF4N60AZ RoHS TMP4N60AZG

0.257. qm04n60f.pdf Size:321K _ubiq

4N60
4N60

QM04N60F 機密 第 1 頁 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM04N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 2.0 Ω 4A most of the synchronous buck converter applications . Applications The QM04N60F meet the RoHS and G

0.258. cs4n60fa9tdy.pdf Size:344K _wuxi_china

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60F A9TDY General Description: VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25℃) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 Ω planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.259. cs4n60a7hd.pdf Size:340K _wuxi_china

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A7HD General Description: VDSS 600 V CS4N60 A7HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

0.260. cs4n60a4hd.pdf Size:352K _wuxi_china

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A4HD General Description: VDSS 600 V CS4N60 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.261. cs4n60a4tdy.pdf Size:351K _wuxi_china

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A4TDY General Description: VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.262. cs4n60a8hd.pdf Size:345K _wuxi_china

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A8HD General Description: VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.263. cs4n60a3hd.pdf Size:353K _wuxi_china

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A3HD General Description: VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.264. cs4n60a3tdy.pdf Size:356K _wuxi_china

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 A3TDY General Description: VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

0.265. cs4n60arrd.pdf Size:343K _wuxi_china

4N60
4N60

Silicon N-Channel Power MOSFET R ○ CS4N60 ARRD General Description: VDSS 600 V CS4N60 ARRD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

0.266. aod4n60.pdf Size:262K _inchange_semiconductor

4N60
4N60

Isc N-Channel MOSFET Transistor AOD4N60 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

0.267. aou4n60.pdf Size:274K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor AOU4N60 FEATURES ·Drain Current –I = 4A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Static Drain-Source On-Resistance : R =2.3Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose a

0.268. spp04n60s5.pdf Size:247K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor SPP04N60S5,ISPP04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·Ultra low effective capacitance ·Improved transconductance ·ABSOLUT

0.269. aot4n60.pdf Size:261K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor AOT4N60 FEATURES ·Drain Current –I = 4A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Static Drain-Source On-Resistance : R =2.2Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose a

0.270. spd04n60s5.pdf Size:244K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

0.271. spw24n60cfd.pdf Size:244K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor SPW24N60CFD ISPW24N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤185mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

0.272. spb04n60c3.pdf Size:258K _inchange_semiconductor

4N60
4N60

Isc N-Channel MOSFET Transistor SPB04N60C3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

0.273. 4n60.pdf Size:229K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor 4N60 DESCRIPTION ·Drain Current I = 4A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25℃) C SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 60

0.274. 4n60as.pdf Size:226K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor 4N60AS DESCRIPTION ·Drain Current I = 4A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25℃) C SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

0.275. fcp104n60f.pdf Size:227K _inchange_semiconductor

4N60
4N60

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP104N60F ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤104mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Lighting ·AC-DC Power Supply ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Dra

0.276. spp24n60cfd.pdf Size:247K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor SPP24N60CFD,ISPP24N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.185Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

0.277. fch104n60.pdf Size:361K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor FCH104N60 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : V ≥ 600V DSS ·Static drain-source on-resistance: RDS(on) ≤ 104mΩ@V =10V GS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25

0.278. aotf4n60.pdf Size:202K _inchange_semiconductor

4N60
4N60

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF4N60 ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM

0.279. spu04n60c3.pdf Size:208K _inchange_semiconductor

4N60
4N60

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPU04N60C3 ·FEATURES ·With To-251(IPAK) package ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·A

0.280. spu04n60s5.pdf Size:261K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor SPU04N60S5 ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

0.281. spp24n60c3.pdf Size:247K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor SPP24N60C3,ISPP24N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.16Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION · Ultra low gate charge · Ultra low effective capacitance · Improved transconductance ·ABSO

0.282. spb04n60s5.pdf Size:258K _inchange_semiconductor

4N60
4N60

Isc N-Channel MOSFET Transistor SPB04N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

0.283. spw24n60c3.pdf Size:244K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor SPW24N60C3 ISPW24N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤160mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

0.284. spp04n60c3.pdf Size:248K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor SPP04N60C3,ISPP04N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

0.285. spd04n60c3.pdf Size:245K _inchange_semiconductor

4N60
4N60

isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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