All MOSFET. 18N50 Datasheet

 

18N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 18N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 277 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 165 nS

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm

Package: TO-3P_TO-263_TO-220_TO-230_TO-220F1_TO-220F2

18N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

18N50 Datasheet (PDF)

1.1. sihp18n50c.pdf Size:247K _upd-mosfet

18N50
18N50

SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 • 100 % Avalanche Tested RDS(on) ()VGS = 10 V 0.225 • High Peak Current Capability Qg (Max.) (nC) 76 • dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 • Improved trr/Qrr Configuration Single • Improved Gate Charge D • High Power Dissipations Capabilit

1.2. irfb18n50kpbf.pdf Size:177K _upd-mosfet

18N50
18N50

SMPS MOSFET PD - 95472A IRFB18N50KPbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID l Uninterruptible Power Supply 500V 0.26Ω 17A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness

 1.3. sihf18n50c.pdf Size:168K _upd-mosfet

18N50
18N50

SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 • 100 % Avalanche Tested RDS(on) (Ω)VGS = 10 V 0.225 • High Peak Current Capability Qg (Max.) (nC) 76 • dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 • Improved trr/Qrr Configuration Single • Improved Gate Charge D • High Power Dissipati

1.4. irfb18n50k.pdf Size:168K _upd-mosfet

18N50
18N50

IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Ω)VGS = 10 V 0.26 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con

 1.5. hy18n50w.pdf Size:294K _upd-mosfet

18N50
18N50

 SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 – MAXIMUM NON- T1 – FORWARD CURRENT AMBIENT TEMPERATURE (℃) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY18N50W 500V / 18A 500V, RDS(ON)=0.32W@VGS=10V, ID=9A N-Channel Enhancement Mode MOSFET Features TO-3PN • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CR

1.6. msf18n50.pdf Size:964K _upd-mosfet

18N50
18N50

MSF18N50 500V N-Channel MOSFET Description The MSF18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. he TO-220F package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrins

1.7. sihf18n50d.pdf Size:169K _upd-mosfet

18N50
18N50

SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.28 - Low Input Capacitance (Ciss) Qg (max.) (nC) 76 - Reduced Capacitive Switching Losses Qgs (nC) 11 - High Body Diode Ruggedness Qgd (nC) 17 - Avalanche Energy Rated (UIS)

1.8. hfh18n50s.pdf Size:221K _update_mosfet

18N50
18N50

Nov 2009 BVDSS = 500 V RDS(on) typ = 0.220 HFH18N50S ID = 19 A 500V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

1.9. wff18n50.pdf Size:608K _update_mosfet

18N50
18N50

WFF18N50 WFF18N50 WFF18N50 WFF18N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 18A,500V,R (Max0.27Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 42nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

1.10. hfs18n50u.pdf Size:263K _update_mosfet

18N50
18N50

Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 HFS18N50U ID = 18 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lo

1.11. hfp18n50u.pdf Size:276K _update_mosfet

18N50
18N50

Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 HFP18N50U ID = 18 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Low

1.12. mtu18n50e.pdf Size:165K _motorola

18N50
18N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU18N50E/D Designer's? Data Sheet MTU18N50E TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 18 AMPERES scheme to provide enhanced voltageblocking capability without 500 VOLTS degrading performance over time. In addition

1.13. mtu18n50erev1.pdf Size:160K _motorola

18N50
18N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU18N50E/D Designer's? Data Sheet MTU18N50E TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 18 AMPERES scheme to provide enhanced voltageblocking capability without 500 VOLTS degrading performance over time. In addition

1.14. fqp18n50v2.pdf Size:836K _fairchild_semi

18N50
18N50

TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailor

1.15. fdp18n50 fdpf18n50 fdpf18n50t.pdf Size:870K _fairchild_semi

18N50
18N50

November 2013 FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Features Description • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low

1.16. fda18n50.pdf Size:732K _fairchild_semi

18N50
18N50

October 2006 TM UniFET FDA18N50 500V N-Channel MOSFET Features Description 19A, 500V, RDS(on) = 0.265? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to Fast swit

1.17. fqpf18n50v2.pdf Size:844K _fairchild_semi

18N50
18N50

TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailor

1.18. fdp18n50 fdpf18n50.pdf Size:466K _fairchild_semi

18N50
18N50

April 2007 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description 18A, 500V, RDS(on) = 0.265? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to

1.19. fqa18n50v2.pdf Size:624K _fairchild_semi

18N50
18N50

TM QFET FQA18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 20A, 500V, RDS(on) = 0.265Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • F

1.20. fqh18n50v2.pdf Size:627K _fairchild_semi

18N50
18N50

® QFET FQH18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 20A, 500V, RDS(on) = 0.265Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • F

1.21. irfb18n50kpbf.pdf Size:194K _international_rectifier

18N50
18N50

SMPS MOSFET PD - 95472A IRFB18N50KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID l Uninterruptible Power Supply 500V 0.26? 17A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Ful

1.22. irfbl18n50k.pdf Size:29K _international_rectifier

18N50
18N50

PD- 93928 PROVISIONAL IRFBL18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply 500V 0.25? 18A Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Voltage

1.23. irfb18n50k.pdf Size:83K _international_rectifier

18N50
18N50

PD - 93926B IRFB18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.26? 17A High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capaci

1.24. sihp18n50c.pdf Size:247K _vishay

18N50
18N50

1.25. irfb18n50k sihfb18n50k.pdf Size:223K _vishay

18N50
18N50

IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Configuration

1.26. ixz318n50.pdf Size:137K _ixys

18N50
18N50

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) ≤ Ω Ω Ω Symbol Test Conditions Maximum Ratings 0.34 Ω TJ = 25°C to 150°C VDSS 500 V PDC = 880 W TJ = 25°C to 150°C; RGS = 1 MΩ VDGR

1.27. ixz4df18n50.pdf Size:238K _ixys

18N50
18N50

IXZ4DF18N50 RF Power MOSFET & DRIVER 500 Volts Driver / MOSFET Combination 19 A DEIC-515 Driver combined with IXZ318N50 MOSFET 0.29 Ohms Gate driver matched to MOSFET Features • Isolated substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low Rds(ON) •

1.28. ixzr18n50a ixzr18n50b.pdf Size:160K _ixys

18N50
18N50

IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) ≤ 0.37 Ω Ω Ω Ω Symbol Test Conditions Maximum Ratings TJ = 25°C to 150°C VDSS 500 V PDC = 350 W TJ = 25°C to 150°C; RGS

1.29. 18n50.pdf Size:251K _utc

18N50
18N50

UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 1 TO-230 TO-220F1 ? DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum 1

1.30. ap18n50w.pdf Size:94K _a-power

18N50
18N50

AP18N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.27? Ў Fast Switching Characteristic ID 20A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

1.31. 18n50a.pdf Size:1179K _goford

18N50
18N50

GOFORD 18N50A Description Features • VDSS RDS(ON) ID @ 10V (typ) 18A 500V 0.22Ω • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • Active power factor correction • Uninterruptible Power Supply (UPS) • Electronic lamp ballasts Absolute Maximum Ratings TC=25℃ unless otherwise specified Max. Symbol Parameter Units

1.32. sdf18n50 sdp18n50.pdf Size:665K _samhop

18N50
18N50

SDP18N50 SDF18N50 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 500V 18A 0.25 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package M

1.33. ssf18n50f.pdf Size:379K _silikron

18N50
18N50

 SSF18N50F  Main Product Characteristics: VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A Marking and pin TO220F Schematic diagram  Assignment  Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating

1.34. cm18n50f.pdf Size:146K _jdsemi

18N50
18N50

R CM18N50F 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS

1.35. cm18n50p.pdf Size:124K _jdsemi

18N50
18N50

R C1N0 M85P 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电焊机控制、大功率开关电源 等功率开关电路 2 .主要特点 1 开关速度快 2 驱动简单,可并联使用 3 3

1.36. mdq18n50gtp.pdf Size:915K _magnachip

18N50
18N50

 MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27Ω General Description Features .  V = 500V DS These N-channel MOSFET are produced using advanced  I = 20.0A @ V = 10V D GS MagnaChip’s MOSFET Technology, which provides low on-  R ≤ 0.27Ω @ V = 10V DS(ON) GS state resistance, high switching performance and excellent quality. Applications These devices are s

1.37. mdp18n50bth.pdf Size:1244K _magnachip

18N50
18N50

MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Description Features The MDP/F18N50B uses advanced Magnachip’s VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) ≤ 0.27Ω @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general

1.38. mdq18n50gth.pdf Size:915K _magnachip

18N50
18N50

 MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27Ω General Description Features .  V = 500V DS These N-channel MOSFET are produced using advanced  I = 20.0A @ V = 10V D GS MagnaChip’s MOSFET Technology, which provides low on-  R ≤ 0.27Ω @ V = 10V DS(ON) GS state resistance, high switching performance and excellent quality. Applications These devices are s

1.39. mdf18n50bth.pdf Size:1244K _magnachip

18N50
18N50

MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Description Features The MDP/F18N50B uses advanced Magnachip’s VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) ≤ 0.27Ω @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general

1.40. msf18n50.pdf Size:964K _bruckewell

18N50
18N50

MSF18N50 500V N-Channel MOSFET Description The MSF18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. he TO-220F package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrins

1.41. wfw18n50.pdf Size:423K _winsemi

18N50
18N50

WFW18N50 WFW18N50 WFW18N50 WFW18N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 18A,500V,R (Max0.27Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description These N-Channel enhancement

1.42. wfp18n50.pdf Size:610K _winsemi

18N50
18N50

WFP18N50 WFP18N50 WFP18N50 WFP18N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 18A,500V,R (Max0.27Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 42nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

1.43. wfw18n50w.pdf Size:804K _winsemi

18N50
18N50

WFW18N50W WFW18N50W WFW18N50W WFW18N50W Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 18A,500V,R (Max0.27Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is prod

1.44. wfw18n50n.pdf Size:794K _winsemi

18N50
18N50

WFW18N50N WFW18N50N WFW18N50N WFW18N50N Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 18A,500V,R (Max0.27Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is prod

Datasheet: 9N50 , 10N50 , 11N50 , 12N50 , 13N50 , 14N50 , 15N50 , 16N50 , IRF830 , 24N50 , 26N50 , UF830 , UF830Z , UF840 , UK3568 , UF450 , UF460 .

 
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