All MOSFET. 2N50 Datasheet

 

2N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 3.9 Ohm

Package: TO-252_TO-220F

2N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N50 Datasheet (PDF)

1.1. stf12n50m2.pdf Size:660K _update

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2N50

STF12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order code VDS RDS(on) max ID STF12N50M2 500 V 0.38 Ω 10 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation 3 2 • Low gate input resistance 1 • 100% avalanche tested TO-220FP • Zener-protected Appli

1.2. 2n5001smd.pdf Size:10K _upd

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2N5001SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

 1.3. 2n5014s.pdf Size:55K _upd

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.4. 2n5013s.pdf Size:55K _upd

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

 1.5. 2n5015sx.pdf Size:55K _upd

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.6. 2n5089g.pdf Size:83K _upd

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2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti

1.7. 2n5015x.pdf Size:84K _upd

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2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) SILICON EPITAXIAL 7.75 (0.305) 8.51 (0.335) NPN TRANSISTOR 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) FEATURES min. 0.41 (0.016) 0.53 (0.021) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR dia. • HIGH BREAKDOWN VOLTAGE • LOW SATURATION VOLTAGE 5.08 (0.20

1.8. 2n5052smd.pdf Size:10K _upd

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2N5052SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

1.9. 2n5012s.pdf Size:55K _upd

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.10. 2n5038g.pdf Size:79K _upd

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2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com • High Speed - tf = 0.5 ms (Max) • High Current - IC(max) = 30 Amps 20 AMPERE • Low Saturation - VCE(sat) = 2.5 V (Max)

1.11. std12n50m2.pdf Size:748K _upd

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STD12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID STD12N50M2 500 V 0.38 Ω 10 A TAB • Extremely low gate charge 3 • Excellent output capacitance (COSS) profile 1 • 100% avalanche tested DPAK • Zener-protected Applications • Switching applications Figure 1. Int

1.12. 2n5010s.pdf Size:55K _upd

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.13. 2n5011s.pdf Size:55K _upd

2N50
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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.14. 2n5087g.pdf Size:156K _upd

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2N5087 Preferred Device Amplifier Transistor PNP Silicon Features • Pb-Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

1.15. 2n5087rlrag.pdf Size:156K _upd

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2N5087 Preferred Device Amplifier Transistor PNP Silicon Features • Pb-Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

1.16. 2n5088g.pdf Size:83K _upd

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2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti

1.17. irfp32n50k irfp32n50kpbf.pdf Size:175K _upd-mosfet

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IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.135 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con

1.18. siha12n50e.pdf Size:164K _upd-mosfet

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SiHA12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.19. irfba22n50apbf.pdf Size:130K _upd-mosfet

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PD-91886C IRFBA22N50A SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptible Power Supply 500V 0.23Ω 24A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage an

1.20. stp12n50m2.pdf Size:618K _upd-mosfet

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STP12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID TAB STP12N50M2 500 V 0.38 Ω 10 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation 3 • Low gate input resistance 2 1 • 100% avalanche tested TO-220 • Zener-protected Appl

1.21. sihg22n50d.pdf Size:180K _upd-mosfet

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SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.230 - Low Input Capacitance (Ciss) Qg max. (nC) 98 - Reduced Capacitive Switching Losses Qgs (nC) 13 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS)

1.22. sihb12n50c sihf12n50c.pdf Size:179K _upd-mosfet

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SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.555 • 100 % Avalanche Tested Qg (Max.) (nC) 48 • Gate Charge Improved Qgs (nC) 12 • Trr/Qrr Improved Qgd (nC) 15 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

1.23. fmi12n50es.pdf Size:507K _upd-mosfet

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FMI12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.

1.24. fmc12n50es.pdf Size:510K _upd-mosfet

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FMC12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.

1.25. sihp12n50c.pdf Size:179K _upd-mosfet

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SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.555 • 100 % Avalanche Tested Qg (Max.) (nC) 48 • Gate Charge Improved Qgs (nC) 12 • Trr/Qrr Improved Qgd (nC) 15 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

1.26. fmv12n50e.pdf Size:374K _upd-mosfet

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FMV12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.

1.27. sihfp22n50a.pdf Size:311K _upd-mosfet

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IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ()VGS = 10 V 0.23 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Con

1.28. fml12n50es.pdf Size:278K _upd-mosfet

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http://www.fujisemi.com FML12N50ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0±0.2 7.0±0.2 0.4±0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow

1.29. sihp12n50e.pdf Size:158K _upd-mosfet

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SiHP12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.30. sihb12n50e.pdf Size:200K _upd-mosfet

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SiHB12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.31. fmc12n50e.pdf Size:452K _upd-mosfet

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FMC12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.32. irfp22n50apbf.pdf Size:311K _upd-mosfet

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IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ()VGS = 10 V 0.23 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Con

1.33. sihfp32n50k.pdf Size:175K _upd-mosfet

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IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.135 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con

1.34. fmp12n50es.pdf Size:478K _upd-mosfet

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FMP12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.5V

1.35. sihd12n50e.pdf Size:185K _upd-mosfet

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SiHD12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.36. fmp12n50e.pdf Size:444K _upd-mosfet

2N50
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FMP12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.37. fmv12n50es.pdf Size:487K _upd-mosfet

2N50
2N50

FMV12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.

1.38. fdpf12n50nzt.pdf Size:370K _upd-mosfet

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October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS(on) = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 23nC ) stripe, DMOS technology. • Low Crss ( Typ. 14pF ) This advanced tech

1.39. sihg32n50d.pdf Size:179K _upd-mosfet

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SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.150 - Low Input Capacitance (Ciss) Qg max. (nC) 96 - Reduced Capacitive Switching Losses Qgs (nC) 18 - High Body Diode Ruggedness Qgd (nC) 29 - Avalanche Energy Rated (UIS)

1.40. fmi12n50e.pdf Size:448K _upd-mosfet

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FMI12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.41. mmix1f132n50p3.pdf Size:182K _update_mosfet

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Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V MMIX1F132N50P3 Power MOSFET ID25 = 63A ≤ Ω RDS(on) ≤ 43mΩ ≤ Ω ≤ Ω ≤ Ω ≤ (Electrically Isolated Tab) trr ≤ 250ns ≤ ≤ ≤ D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V Isolated Tab VDGR TJ =

1.42. cs2n50a4.pdf Size:357K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS2N50 A4 General Description: VDSS 500 V CS2N50 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.43. 2n5087rev0.pdf Size:300K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5087/D Amplifier Transistor PNP Silicon 2N5087 COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 50 Vdc CollectorBase Voltage VCBO 50 Vdc EmitterBase Voltage VEBO 3.0 Vdc Collector Current

1.44. 2n5088 2n5089.pdf Size:281K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol 2N508 2N508 Unit TO92 (TO226AA) 8 9 CollectorEmitter Voltage VCEO 30 25 Vdc CollectorBase Voltage VCBO 35 30 Vdc EmitterBase Voltage VEBO 3.0 Vdc Collector Current C

1.45. 2n5060 2n5062 2n5061 2n5064.pdf Size:110K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5060/D 2N5060 2N5061 * Silicon Controlled Rectifiers 2N5062 Reverse Blocking Triode Thyristors * 2N5064 *Motorola preferred devices . . . Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and SCRs sensing and detec

1.46. mtp2n50e.pdf Size:244K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N50E/D Designer's? Data Sheet MTP2N50E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltageblocking capability without 500 VOLTS degrading performa

1.47. mtd2n50e.pdf Size:255K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2N50E/D Designer's? Data Sheet TMOS E-FET.? MTD2N50E Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltageblocking capability without 500 VO

1.48. 2n5086 2n5087.pdf Size:434K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5086/D Amplifier Transistors 2N5086 PNP Silicon * 2N5087 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 50 Vdc CollectorBase Voltage VCBO 50 Vdc EmitterBase Voltage VEBO 3.0 Vdc Collecto

1.49. 2n5038 2n5039.pdf Size:124K _motorola

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Order this document MOTOROLA by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N5038 * 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wideband amplifiers and power oscillators in 20 AMPERE industrial and commercial applications. NPN SILICON POWER TRANSISTORS

1.50. mtd2n50erev1x.pdf Size:299K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2N50E/D Designer's? Data Sheet TMOS E-FET.? MTD2N50E Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltageblocking capability without 500 VO

1.51. 2n5087 cnv 2.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5087 PNP general purpose transistor Product specification 1997 Jul 02 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor 2N5087 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 collect

1.52. 2n5088 3.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor 1997 Sep 03 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N5088 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 30 V). 1 collector

1.53. php2n50e phb2n50e phd2n50e.pdf Size:73K _philips2

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Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 2 A g • Low thermal resistance RDS(ON) ≤ 5 Ω s GENERAL DESCRIPTION N-channe

1.54. phx2n50e.pdf Size:85K _philips2

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Philips Semiconductors Product specification PowerMOS transistors PHX2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 1.4 A g • Isolated package RDS(ON) ≤ 5 Ω s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan

1.55. php2n50 1.pdf Size:56K _philips2

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Philips Semiconductors Product specification PowerMOS transistor PHP2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 2 A off-state characteristics, fast Ptot Total power dissipation 50

1.56. phb2n50 1.pdf Size:59K _philips2

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Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 500 V mounting featuring high avalanche ID Drain current (DC) 2 A energy capability, stable off-state Ptot Total power dissip

1.57. php2n50e 3.pdf Size:74K _philips2

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Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 A g Low thermal resistance RDS(ON) ? 5 ? s GENERAL DESCRIPTION N-channel, enhancement mo

1.58. phu2n50e 1.pdf Size:64K _philips2

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Philips Semiconductors Product specification PowerMOS transistors PHU2N50E Avalanche energy rated FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 A Low thermal resistance Extremely high dV/dt capability RDS(ON) ? 5 ? GENERAL DESCRIPTION N-channel, enhancement mode

1.59. std2n50.pdf Size:174K _st

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STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD2N50 500 V < 5.5 ? 2 A TYPICAL R = 4.5 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1) SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK P

1.60. 2n5038.pdf Size:42K _st

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2N5038 HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching 1 applications. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-B

1.61. fdp12n50 fdpf12n50.pdf Size:446K _fairchild_semi

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June 2007 UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65? Features Description RDS(on) = 0.55? (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF) This advanced technology has been especially

1.62. fdp12n50nz fdpf12n50nz.pdf Size:377K _fairchild_semi

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October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52? Features Description RDS(on) = 0.46? ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC ) stripe, DMOS technology. Low Crss ( Typ. 14pF ) This advanced technology has be

1.63. fqpf2n50.pdf Size:711K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.3A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology has bee

1.64. fdp12n50f fdpf12n50ft.pdf Size:695K _fairchild_semi

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December 2007 UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7? Features Description RDS(on) = 0.59? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has been espe

1.65. fqnl2n50b.pdf Size:598K _fairchild_semi

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March 2001 TM QFET FQNL2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.35A, 500V, RDS(on) = 5.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has been especially tailored to Fas

1.66. fqu2n50b.pdf Size:731K _fairchild_semi

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November 2013 FQU2N50B N-Channel QFET® MOSFET 500 V, 1.6 A, 5.3 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 0.8 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 6.0 nC) MOSFET technology has been especially tailo

1.67. 2n5088 mmbt5088 2n5089 mmbt5089.pdf Size:97K _fairchild_semi

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2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1A to 50 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO Coll

1.68. fdp22n50n.pdf Size:557K _fairchild_semi

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April 2009 UniFETTM FDP22N50N N-Channel MOSFET 500V, 22A, 0.22? Features Description RDS(on) = 0.185? ( Typ.)@ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 49nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology has been especially tailored to m

1.69. fqi12n50tu.pdf Size:616K _fairchild_semi

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TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 39 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored

1.70. fqb2n50tm.pdf Size:720K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQB2N50 / FQI2N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.1A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technolog

1.71. fqd2n50tf fqd2n50tm.pdf Size:714K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQD2N50 / FQU2N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technolog

1.72. fdb12n50u.pdf Size:643K _fairchild_semi

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March 2008 TM Ultra FRFET FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8? Features Description RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has been especiall

1.73. fdp12n50u fdpf12n50ut.pdf Size:646K _fairchild_semi

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November 2007 Ultra FRFETTM FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8? Features Description RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has

1.74. fdb12n50f.pdf Size:602K _fairchild_semi

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November 2007 UniFETTM FDB12N50F tm N-Channel MOSFET, FRFET 500V, 11.5A, 0.7? Features Description RDS(on) = 0.59? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has been especially

1.75. fdp12n50 fdpf12n50t.pdf Size:535K _fairchild_semi

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May 2012 UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 22nC) stripe, DMOS technology. • Low Crss ( Typ. 11pF) This advanced technology has be

1.76. 2n5086 2n5087 mmbt5087.pdf Size:100K _fairchild_semi

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2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 TO-92 1 Mark: 2Q 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emi

1.77. fqp2n50.pdf Size:712K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.1A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology has been

1.78. fqnl2n50bbu fqnl2n50bta.pdf Size:596K _fairchild_semi

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March 2001 TM QFET FQNL2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.35A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology has been especially tailo

1.79. fqb12n50tm am002.pdf Size:616K _fairchild_semi

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TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 39 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored

1.80. fdb12n50tm.pdf Size:2875K _fairchild_semi

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June 2007 UniFETTM FDB12N50TM tm N-Channel MOSFET 500V, 11.5A, 0.65? Features Description RDS(on) = 0.55? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 12pF) This advanced technology has been especially tailored

1.81. fqu2n50btu.pdf Size:598K _fairchild_semi

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May 2000 TM QFET QFET QFET QFET FQD2N50B / FQU2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology

1.82. irfba32n50k.pdf Size:41K _international_rectifier

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PD- 93924 PROVISIONAL IRFBA32N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply 500V 0.14? 32A Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Voltage

1.83. irfp32n50ks.pdf Size:115K _international_rectifier

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PD - 94360 IRFP32N50KS SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135? 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capa

1.84. irfp32n50k.pdf Size:94K _international_rectifier

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PD - 94099A IRFP32N50K SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135? 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capa

1.85. irfp22n50a.pdf Size:103K _international_rectifier

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PD- 91833C SMPS MOSFET IRFP22N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.23? 22A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current TO-2

1.86. irfba22n50a.pdf Size:106K _international_rectifier

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PD-91866B IRFBA22N50A SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptible Power Supply 500V 0.23? 24A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current S

1.87. irfbl12n50a.pdf Size:175K _international_rectifier

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PD - 91818A SMPS MOSFET IRFBL12N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45? 13A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-D2PakTM Avalanche Voltage

1.88. irfp32n50kpbf.pdf Size:202K _international_rectifier

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PD - 95052 IRFP32N50KPbF SMPS MOSFET HEXFET Power MOSFET AppIications l Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID l Uninterruptible Power Supply l High Speed Power Switching 500V 0.135? 32A l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l F

1.89. irfp22n50apbf.pdf Size:206K _international_rectifier

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PD - 95004 IRFP22N50APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply 500V 0.23? 22A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Vo

1.90. 2n5088-2n5089.pdf Size:58K _samsung

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2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage :2N5088 VCBO 2N5089 30 V Collector-Emitter Voltage :2N5088 VCEO 30 V 2N5089 25 V Emitter-Base Voltage VEBO 4.5 V Collec

1.91. ssh22n50a.pdf Size:220K _samsung

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SSH22N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.25 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 22 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.197 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character

1.92. irfp32n50k sihfp32n50k.pdf Size:170K _vishay

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IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.135 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Configuration

1.93. irfp22n50a sihfp22n50a.pdf Size:306K _vishay

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IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.23 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Configuration

1.94. sihp12n50c sihb12n50c sihf12n50c.pdf Size:154K _vishay

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1.95. 2n5088 2n5089.pdf Size:66K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.96. 2n5058 2n5059.pdf Size:81K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.97. 2n5086 2n5087.pdf Size:60K _central

2N50

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.98. 2n5022 2n5023.pdf Size:73K _central

2N50

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.99. zxt12n50dx.pdf Size:261K _diodes

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ZXT12N50DX SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 45m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSOP8 FEA

1.100. spd02n50c3 rev.2.5.pdf Size:630K _infineon

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VDS Tjmax ? G 2 G

1.101. spw52n50c3 rev126 pcn12.pdf Size:609K _infineon

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SPW52N50C3 CoolMOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.07 ? New revolutionary high voltage technology ID 52 A Worldwide best RDS(on) in TO-247 PG-TO247 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Marking SPW52N50C3 PG-TO247 52N50C3 Maximum Ratings Paramete

1.102. spb12n50c3 rev.2.4.pdf Size:1694K _infineon

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SPB12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11.6 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance - Type Package Ordering Code Marking 12N50C3 SPB12N50C3 PG-TO263 Q67040-S4641 Maximum Ratings Parameter

1.103. spw12n50c3 rev[1].2.5 pcn.pdf Size:763K _infineon

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VDS Tjmax ? G G

1.104. spw32n50c3 rev[1].2.5 pcn.pdf Size:822K _infineon

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SPW32N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.11 ? New revolutionary high voltage technology ID 32 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 Maximum Ratings Parameter Symbol

1.105. ixtn62n50l.pdf Size:84K _ixys

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Preliminary Technical Information IXTN62N50L VDSS = 500 V Linear Power MOSFET ID25 = 62 A With Extended FBSOA D ? ? RDS(on) ? 0.1 ? ? ? ? ? ? ? N-Channel Enhancement Mode G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXTN) E153432 VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V S G VGS Continuous 30 V VGSM Transient 40 V ID25 TC

1.106. ixtp02n50d ixtu02n50d ixty02n50d.pdf Size:94K _ixys

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IXTP 02N50D VDSS = 500 V High Voltage MOSFET IXTU 02N50D ID25 = 200 mA N-Channel, Depletion Mode IXTY 02N50D ? RDS(on) = 30 ? ? ? ? Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25C to 150C 500 V VDGX TJ = 25C to 150C 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V G D S IDSS TC = 25C; TJ = 25C to 150C 200 mA IDM TC =

1.107. ixfh22n50p ixfv22n50p.pdf Size:312K _ixys

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IXFH 22N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 22N50P ID25 = 22 A Power MOSFET IXFV 22N50PS RDS(on) ? 270 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V D (TAB) VGS Continuous 30 V VGSM

1.108. ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf Size:110K _ixys

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VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr ? 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC = 25C 30N

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2N50

Advance Technical Information PolarP2TM HiperFETTM VDSS = 500V IXFH42N50P2 ID25 = 42A Power MOSFET IXFT42N50P2 ? ? RDS(on) ? ? ? 145m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G D Symbol Test Conditions Maximum Ratings D (Tab) S VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M? 500 V TO-268 (IXFT) VGSS Continuous 3

1.110. ixfk32n50q ixfx32n50q.pdf Size:573K _ixys

2N50
2N50

VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q Ω 500 V 32 A 0.16 Ω Ω Ω Power MOSFETs Ω Ω 500 V 32 A 0.16 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

1.111. ixti12n50p.pdf Size:157K _ixys

2N50
2N50

VDSS = 500V PolarTM Power MOSFET IXTA12N50P ID25 = 12A IXTI12N50P ≤ Ω RDS(on) ≤ 500mΩ ≤ Ω ≤ Ω ≤ Ω IXTP12N50P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 500 V S (TAB) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V Leaded TO-263 (IXTI) ID25

1.112. ixfl132n50p3.pdf Size:144K _ixys

2N50
2N50

Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V IXFL132N50P3 Power MOSFET ID25 = 63A ≤ Ω RDS(on) ≤ 43mΩ ≤ Ω ≤ Ω ≤ Ω ≤ (Electrically Isolated Tab) trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode Avalanche Rated ISOPLUS264 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V G VDGR TJ = 25°C to 15

1.113. ixfr30n50q ixfr32n50q.pdf Size:91K _ixys

2N50
2N50

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q 500 V 29 A 0.16 W IXFR 32N50Q 500 V 30 A 0.15 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E 153432 VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V

1.114. ixft52n50p2 ixfh52n50p2.pdf Size:127K _ixys

2N50
2N50

Advance Technical Information PolarP2TM HiperFETTM VDSS = 500V IXFH52N50P2 ID25 = 52A Power MOSFET IXFT52N50P2 ? ? RDS(on) ? ? ? 120m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V TO-268 (IXFT) VDGR TJ = 25C to 150C, RGS = 1M? 500 V VGSS Continuous

1.115. ixth22n50p ixtq22n50p ixtv22n50p.pdf Size:198K _ixys

2N50
2N50

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) ? ? ? ? ? 270 m? ? ? ? ? N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25C to 150C 500 V S VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Transient 40 V ID25 TC = 25

1.116. ixtb62n50l.pdf Size:109K _ixys

2N50
2N50

Preliminary Technical Information IXTB62N50L VDSS = 500 V Linear Power MOSFET ID25 = 62 A With Extended FBSOA ? ? RDS(on) ? 0.1 ? ? ? ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings PLUS 264TM (IXTB) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 62 A G (TAB) D IDM TC =

1.117. ixth12n50a ixtm12n50a.pdf Size:62K _ixys

2N50
2N50

VDSS ID25 RDS(on) Standard Ω IXTH 12 N50A 500 V 12 A 0.4 Ω Ω Ω Ω Power MOSFET Ω IXTM 12 N50A 500 V 12 A 0.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C12 A IDM TC

1.118. ixfj32n50q.pdf Size:89K _ixys

2N50
2N50

VDSS = 500 V IXFJ 32N50Q HiPerFETTM ID(cont) = 32 A Power MOSFETs RDS(on) = 0.15 W Q-Class trr < 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V G VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V D é S VGS Continuous ±20 V (TAB) VGSM Transient ±3

1.119. ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf Size:65K _ixys

2N50



1.120. ixfh32n50q ixft32n50q.pdf Size:567K _ixys

2N50
2N50

IXFH 32N50Q VDSS ID25 RDS(on) HiPerFETTM IXFT 32N50Q Power MOSFETs ? 500 V 32 A 0.16 ? ? ? ? ? 500 V 32 A 0.16 ? ? ? ? Q-Class ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V VGSM Transie

1.121. 2n5088 2n5089.pdf Size:83K _onsemi

2N50
2N50

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http://onsemi.com Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Continuous

1.122. 2n5087-d.pdf Size:155K _onsemi

2N50
2N50

2N5087 Preferred Device Amplifier Transistor PNP Silicon Features Pb-Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 25C P

1.123. 2n5060.pdf Size:127K _onsemi

2N50
2N50

2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate http://onsemi.com drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA (TO-92) package SCRs which is

1.124. 2n5038.pdf Size:79K _onsemi

2N50
2N50

2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps 20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max) @ IC = 20

1.125. 12n50.pdf Size:214K _utc

2N50
2N50

UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

1.126. 2n50.pdf Size:167K _utc

2N50
2N50

UNISONIC TECHNOLOGIES CO., LTD 2N50 Power MOSFET Preliminary 2 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 2N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand

1.127. 2n4901-03 2n5067-69.pdf Size:171K _mospec

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2N50

A A A A

1.128. 2n5015.pdf Size:11K _semelab

2N50

2N5015 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 1000V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.129. 2n5013.pdf Size:11K _semelab

2N50

2N5013 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 800V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.130. 2n5095.pdf Size:11K _semelab

2N50

2N5095 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 400V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ca

1.131. 2n5099.pdf Size:11K _semelab

2N50

2N5099 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 550V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ca

1.132. 2n5011.pdf Size:11K _semelab

2N50

2N5011 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 600V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.133. 2n5012.pdf Size:11K _semelab

2N50

2N5012 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 700V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.134. 2n5014.pdf Size:15K _semelab

2N50

2N5014 MECHANICAL DATA Dimensions in mm (inches) SILICON EPITAXIAL NPN TRANSISTOR FEATURES General purpose power transistor for switch- ing and linear applications in a hermetic TO39 package. !

1.135. 2n5038 2n5039.pdf Size:95K _bocasemi

2N50
2N50

A Boca Semiconductor Corp. (BSC) http://www.bocasemi.com A http://www.bocasemi.com http://www.bocasemi.com

1.136. 2n5088 89.pdf Size:214K _cdil

2N50
2N50

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE C B E Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS Collector -Base Voltage VCBO 35 30 V Collector -Emitter Voltage VCE0 30 25 V Emitter -Base Voltage VEBO 4.5 V Collector Current- Continuous IC 5

1.137. 2n5020 2n5021.pdf Size:89K _interfet

2N50

Databook.fxp 1/13/99 2:09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/C Storage Temperature Range 65C to + 200C At 25C free

1.138. 2n5067 2n5068 2n5069.pdf Size:41K _jmnic

2N50
2N50

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5067 2N5068 2N5069 DESCRIPTION ·With TO-3 package ·Complement to type 2N4901,2N4902,2N4903 ·Low collector-emitter saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and s

1.139. 2n5050 2n5051 2n5052.pdf Size:49K _jmnic

2N50
2N50

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION · ·With TO-66 package ·High breakdown voltage ·Excellent safe operating area APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maxim

1.140. 2n5038 2n5039.pdf Size:92K _jmnic

2N50
2N50

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5038/2N5039 DESCRIPTION ·With TO-3 package ·High current APPLICATIONS ·They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITION

1.141. 2n5018.pdf Size:263K _linear-systems

2N50
2N50

2N5018 SERIES SINGLE P-CHANNEL Linear Integrated Systems JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75? TO-18 ABSOLUTE MAXIMUM RATINGS1 BOTTOM VIEW @ 25 C (unless otherwise stated) Maximum Temperatures G 2 3 D Storage Temperature -55 to 200C Junction Operating Temperature -55 to 200C 1 S Maximum Power Dissip

1.142. 2n5019.pdf Size:263K _linear-systems

2N50
2N50

2N5018 SERIES SINGLE P-CHANNEL Linear Integrated Systems JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75? TO-18 ABSOLUTE MAXIMUM RATINGS1 BOTTOM VIEW @ 25 °C (unless otherwise stated) Maximum Temperatures G 2 3 D Storage Temperature -55 to 200°C Junction Operating Temperature -55 to 200°C 1 S Maximum Power Dis

1.143. 2n5031.pdf Size:83K _microsemi

2N50
2N50

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC 2 1. Emitter Maximum Unilateral Gain 12 dB (typ) @ 400 MHz 2. Base 1 3 3. Collector 4 4. Case TO-72 DESCRIPTION: General

1.144. 2n5005.pdf Size:153K _semicoa

2N50
2N50

Data Sheet No. 2N5005 Generic Part Number: Type 2N5005 2N5005 Geometry 9702 Polarity PNP REF: MIL-PRF-19500/512 Qual Level: JAN - JANTXV Features: Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/512 which TO-59

1.145. 2n5002.pdf Size:51K _semicoa

2N50
2N50

Data Sheet No. 2N5002 Generic Part Number: Type 2N5002 2N5002 Geometry 9202 Polarity NPN REF: MIL-PRF-19500/534 Qual Level: JAN - JANTXV Features: Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/534 which TO-59

1.146. 2n5004.pdf Size:51K _semicoa

2N50
2N50

Data Sheet No. 2N5004 Generic Part Number: Type 2N5004 2N5004 Geometry 9202 Polarity NPN REF: MIL-PRF-19500/534 Qual Level: JAN - JANTXV Features: Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown are TO-59 per MIL-PRF-19500/534 which

1.147. 2n5003.pdf Size:152K _semicoa

2N50
2N50

Data Sheet No. 2N5003 Generic Part Number: Type 2N5003 2N5003 Geometry 9702 Polarity PNP REF: MIL-PRF-19500/512 Qual Level: JAN - JANTXV Features: Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are TO-59 per MIL-PRF-19500/512 which

1.148. 2n5067 2n5068 2n5069.pdf Size:117K _inchange_semiconductor

2N50
2N50

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N4901/4902/4903 Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For general­purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N5067 2N5068 2N5069 Fig.1 simplified outline (TO-3) and symbol Collect

1.149. 2n5050 2n5051 2n5052.pdf Size:125K _inchange_semiconductor

2N50
2N50

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ High breakdown voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5050 2N5051 2N5052 Fig.1 simplified outline (TO-66) and symbol Absolut

1.150. 2n5038 2n5039.pdf Size:118K _inchange_semiconductor

2N50
2N50

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION Ў¤ With TO-3 package Ў¤ High speed Ў¤ Low collector saturation voltage APPLICATIONS They are especially intended for high current and fast switching applications Ў¤ PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maxim

1.151. h2n5087.pdf Size:49K _hsmc

2N50
2N50

Spec. No. : HE6210 HI-SINCERITY Issued Date : 1998.02.01 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ..............

1.152. aotf12n50.pdf Size:433K _aosemi

2N50
2N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.153. aob12n50.pdf Size:434K _aosemi

2N50
2N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.154. aok22n50l.pdf Size:436K _aosemi

2N50
2N50

AOK22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 22A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.26Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.155. aot22n50.pdf Size:534K _aosemi

2N50
2N50

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.156. aotf22n50.pdf Size:534K _aosemi

2N50
2N50

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.157. aowf12n50.pdf Size:281K _aosemi

2N50
2N50

AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS The AOW12N50 & AOWF12N50 have been fabricated 600V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.52Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss

1.158. aok22n50.pdf Size:490K _aosemi

2N50
2N50

AOK22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 22A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.26Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.159. aot22n50l.pdf Size:534K _aosemi

2N50
2N50

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.160. aot12n50.pdf Size:433K _aosemi

2N50
2N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.161. aow12n50.pdf Size:281K _aosemi

2N50
2N50

AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS The AOW12N50 & AOWF12N50 have been fabricated 600V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.52Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss

1.162. aob12n50l.pdf Size:257K _aosemi

2N50
2N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.163. 2n5006 2n5008.pdf Size:97K _ssdi

2N50
2N50

1.164. 2n4999 2n5001.pdf Size:98K _ssdi

2N50
2N50

1.165. 2n5013 2n5014 2n5015.pdf Size:89K _ssdi

2N50
2N50

1.166. 2n5095 2n5097.pdf Size:91K _ssdi

2N50
2N50

1.167. 2n5094 2n5096.pdf Size:95K _ssdi

2N50
2N50

1.168. 2n5045.pdf Size:207K _solitron

2N50
2N50



1.169. mdf12n50bth.pdf Size:1149K _magnachip

2N50
2N50



1.170. mdp12n50bth.pdf Size:1149K _magnachip

2N50
2N50

MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65Ω General Description Features The MDP/F12N50B uses advanced Magnachip’s VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) ≤ 0.65Ω @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc

1.171. mdp12n50fth.pdf Size:1068K _magnachip

2N50
2N50

 MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip’s MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GS state resistance, high switching performance and excellent R ≤ 0.7Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic

1.172. mdf12n50fth.pdf Size:1068K _magnachip

2N50
2N50

 MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip’s MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GS state resistance, high switching performance and excellent R ≤ 0.7Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic

Datasheet: UF830 , UF830Z , UF840 , UK3568 , UF450 , UF460 , 1N50 , 1N50Z , 2N4416 , 3N50 , 3N50Z , 4N50 , 5N50 , 5N50K , 6N50 , 7N50 , 8N50 .

 
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