5N50K Datasheet and Replacement
Type Designator: 5N50K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220F
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5N50K Datasheet (PDF)
5n50k.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting1UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the TO-220Frequirements of the minimum on-state resistance and perfect switching performance. It also can
g5n50t g5n50f g5n50j g5n50k.pdf

G5N50KGOFORDDescription 500V N-CHANNEL ENHANCEMENT MODE POWER MOSFET ApplicationFeaturesR DS(ON)(Max)IVDSS D .@ VGS = 10V DC Motor Control and Class D Amplifier 500V 5A Uninterruptible Power Supply (UPS) 1.4 Fast switching HID 100% avalanche tested Improved dv/dt capability RoHS Compliant & Halogen-Free Package Ordering Informa
hm5n50k hm5n50i.pdf

HM5N50K/HM5N50IHM5N50K/HM5N50I500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 500V, RDS(on) = 2.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AP50WN520P
Keywords - 5N50K MOSFET datasheet
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History: AP50WN520P



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