All MOSFET. 1N40 Datasheet

 

1N40 MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N40

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 4.5 Ohm

Package: TO-220_SOT-92

1N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N40 Datasheet (PDF)

1.1. hfw11n40.pdf Size:169K _update_mosfet

1N40
1N40

Dec 2005 BVDSS = 400 V RDS(on) typ HFW11N40 ID = 11.4 A 400V N-Channel MOSFET D2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

1.2. hfs11n40.pdf Size:167K _update_mosfet

1N40
1N40

Dec 2005 BVDSS = 400 V RDS(on) typ HFS11N40 ID = 11.4 A 400V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RD

 1.3. hfp11n40.pdf Size:179K _update_mosfet

1N40
1N40

Dec 2005 BVDSS = 400 V RDS(on) typ HFP11N40 ID = 11.4 A 400V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(

1.4. phx1n40e 1.pdf Size:24K _philips2

1N40
1N40

Philips Semiconductors Objective specification PowerMOS transistor PHX1N40E Isolated version of PHP2N40E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack, plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 1.75 A blocking voltag

 1.5. phx1n40 1.pdf Size:59K _philips2

1N40
1N40

Philips Semiconductors Product specification PowerMOS transistor PHX1N40 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 1.7 A off-state characteristics, fast Ptot Total power di

1.6. fqb11n40tm.pdf Size:565K _fairchild_semi

1N40
1N40

November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tai

1.7. fqb11n40ctm.pdf Size:970K _fairchild_semi

1N40
1N40

October 2008 QFET® FQB11N40C/FQI11N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 85pF) This advanced technology has been especia

1.8. fqp11n40.pdf Size:699K _fairchild_semi

1N40
1N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has bee

1.9. fqp11n40c fqpf11n40c.pdf Size:1216K _fairchild_semi

1N40
1N40

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially tailored to m

1.10. fqb11n40c.pdf Size:972K _fairchild_semi

1N40
1N40

November 2013 FQB11N40C N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ Description Features These N-Channel enhancement mode power field effect • 10.5 A, 400V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, ID = 5.25 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 28 nC) technology has been especially tai

1.11. fqi11n40tu.pdf Size:565K _fairchild_semi

1N40
1N40

November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tai

1.12. fqpf11n40ct.pdf Size:1213K _fairchild_semi

1N40
1N40

May 2008 ® QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 28 nC) DMOS technology. • Low Crss ( typical 85pF) This advanced technology has been especially

1.13. fqaf11n40.pdf Size:695K _fairchild_semi

1N40
1N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 8.8A, 400V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has bee

1.14. fqpf11n40t.pdf Size:709K _fairchild_semi

1N40
1N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.6A, 400V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been

1.15. 1n40.pdf Size:167K _utc

1N40
1N40

UNISONIC TECHNOLOGIES CO., LTD 1N40 Preliminary Power MOSFET 1 Amps, 400 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can with

1.16. 11n40.pdf Size:239K _utc

1N40
1N40

UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 11.4A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS = 400V * ID = 11.4A * RDS(O

1.17. khb011n40p1.pdf Size:1322K _kec

1N40
1N40

KHB011N40P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS(Min.)= 400V

1.18. khb011n40f2.pdf Size:1322K _kec

1N40
1N40

KHB011N40P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS(Min.)= 400V

1.19. khb011n40f1.pdf Size:1322K _kec

1N40
1N40

KHB011N40P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS(Min.)= 400V

1.20. ap01n40g-hf.pdf Size:56K _a-power

1N40
1N40

AP01N40G-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower Gate Charge BVDSS 400V D Ў 100% Avalanche Test RDS(ON) 16? Ў Fast Switching Performance ID 0.2A G Ў Simple Drive Requirement S D Description Advanced Power MOSFETs from APEC provide the designer with S the best combination of fast switching, ruggedized device design,

1.21. ap01n40hj-hf.pdf Size:57K _a-power

1N40
1N40

AP01N40H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower Gate Charge BVDSS 400V D Ў 100% Avalanche Rated RDS(ON) 16? Ў Fast Switching Performance ID 0.5A G Ў Simple Drive Requirement S Ў RoHS Compliant & Halogen-Free Description G D AP01N40 series are from Advanced Power innovated design and TO-252(H) S silicon proce

1.22. ap01n40j.pdf Size:65K _a-power

1N40
1N40

AP01N40J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge BVDSS 400V D ▼ 100% Avalanche Rated RDS(ON) 16Ω ▼ Fast Switching Performance ID 0.5A G ▼ Simple Drive Requirement S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

Datasheet: 3N50 , 3N50Z , 4N50 , 5N50 , 5N50K , 6N50 , 7N50 , 8N50 , IRFP260 , 2N40 , 3N40 , 4N40 , 5N40 , 6N40 , 7N40 , 8N40 , 9N40 .

 
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