All MOSFET. 15N25 Datasheet

 

15N25 Datasheet and Replacement


   Type Designator: 15N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO-220F1
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15N25 Datasheet (PDF)

 ..1. Size:145K  utc
15n25.pdf pdf_icon

15N25

UNISONIC TECHNOLOGIES CO., LTD 15N25 Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N25 is an N-channel enhancement MOSFET usingUTCs advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 15N25 is universally applied in low voltage such as automotive,

 0.1. Size:1196K  belling
bl15n25-p bl15n25-a bl15n25-u bl15n25-d.pdf pdf_icon

15N25

BL15N25 Power MOSFET 1Description Step-Down Converter BL15N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 0.2. Size:1022K  matsuki electric
me15n25f me15n25f-g.pdf pdf_icon

15N25

ME15N25F/ME15N25F-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)220m@VGS=10V The ME15N25F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

 0.3. Size:1248K  matsuki electric
me15n25 me15n25-g.pdf pdf_icon

15N25

ME15N25/ME15N25-G N- Channel 250V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME15N25 is the N-Channel logic enhancement mode power RDS(ON)265m@VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi

Datasheet: 18N40 , 20N40 , 25N40 , UF730 , UF740 , UF3N25 , UF634 , 12N25 , IRFZ46N , 18N25 , UF2N30 , 10N30 , 12N30 , UF3205 , 2N7000Z , 2N7002LL , 2N7002Z .

History: NP48N055CLE | BSB280N15NZ3G | 12N65KG-TF1-T | AP97T07GW-HF | R5016ANJ | ELM13401CA | DH150N12B

Keywords - 15N25 MOSFET datasheet

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