15N25 Spec and Replacement
Type Designator: 15N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 67 nC
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO-220F1
15N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
15N25 Specs
15n25.pdf
UNISONIC TECHNOLOGIES CO., LTD 15N25 Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N25 is an N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 15N25 is universally applied in low voltage such as automotive, ... See More ⇒
bl15n25-p bl15n25-a bl15n25-u bl15n25-d.pdf
BL15N25 Power MOSFET 1 Description Step-Down Converter BL15N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒
me15n25f me15n25f-g.pdf
ME15N25F/ME15N25F-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 220m @VGS=10V The ME15N25F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process ... See More ⇒
me15n25 me15n25-g.pdf
ME15N25/ME15N25-G N- Channel 250V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME15N25 is the N-Channel logic enhancement mode power RDS(ON) 265m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi... See More ⇒
Detailed specifications: 18N40 , 20N40 , 25N40 , UF730 , UF740 , UF3N25 , UF634 , 12N25 , SI2302 , 18N25 , UF2N30 , 10N30 , 12N30 , UF3205 , 2N7000Z , 2N7002LL , 2N7002Z .
Keywords - 15N25 MOSFET specs
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