50N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 50N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 430 pF

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: TO-220 TO-263 TO-251 TO-252 TO-220F

50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

50N06 Datasheet (PDF)

..1. 50n06.pdf Size:339K _utc

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-263 TO-251The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 11It is mainly suitable electronic

..2. 50n06.pdf Size:2133K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-TransistorProduct SummaryFeaturesV 60 VDS For fast switching converters and sync. rectificationR 15mDS(on),max SMDversion N-channel enhancement - normal levelI 50 AD 175 C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant50N06Type 50N062113 23

..3. 50n06.pdf Size:2391K _goford

GOFORD50N06Description Features VDSS RDS(ON) IDVDSS RDS(ON) ID @ (typ)@10V (typ)10V 19m 50A60V 60V 19m 50A Fast switching 100% avalanche tested Improved dv/dt capability Application UPS High efficiency switch mode power supplies Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO-

..4. 50n06.pdf Size:1202K _umw-ic

RUMW UMW 50N0660V N-Channel Enhancement Mode Power MOSFETUMW 50N06General DescriptionThe 50N06 uses advanced trench technology and design toprovide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.FeaturesVDS = 60V,ID =50ARDS(ON),12m(Typ) @ VGS =10VRDS(ON),16m(Typ) @ VGS =4.5VAdvanced Trench TechnologyExcellent RDS(ON) and L

..5. 50n06.pdf Size:3874K _cn_tuofeng

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN -CHANNEL ENHANCEMENT MODE POWER MOSFET50N06Product SummaryV 60 VDSTO-252 TO-251 R 15 m D DS(on),max SMDversionI 50 AD S SD GGFeatures Equivalent Circuit For fast switching converters and sync. rectificationD N-channel enhancement - normal levelG 175 C operating temperature Avalanche

..6. 50n06 50n06f 50n06b 50n06h 50n06g 50n06d.pdf Size:521K _chongqing_pingwei

50N06(F,B,H,G,D)50 Amps,60 Volts N-CHANNEL MOSFETFEATURE 50A,60V,R =17.5m@VGS=10V/25ADS(ON)MAXR =20m@VGS=4.5V/25ADS(ON)MAX Low gate charge Low CissTO-220AB ITO-220AB TO-262 Fast switching 100% avalanche tested 50N06 50N06F 50N06H Improved dv/dt capabilityTO-263 TO-252 TO-25150N06B 50N06G 50N06DAbsolute Maximum Ratings(T =25,unless otherwi

0.1. ipd50n06s2l-13.pdf Size:154K _1

IPD50N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 12.7mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Mark

0.2. kia50n06.pdf Size:1126K _1

KIA50N06PbKIA50N06Pb Free Plating Product50A,60V Heatsink Planar N-Channel Power MOSFETFeatures2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 VBVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF)RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche testedID = 50A

0.3. tsp50n06m tsf50n06m.pdf Size:828K _1

TSP50N06M / TSF50N06M60V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Truesemis 50A, 60V, RDS(on) = 0.023 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 33nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avala

0.4. ste250n06.pdf Size:330K _1

STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE VDSS RDS(on) IDSTE250N06 60 V

0.5. mtb50n06vlrev2.pdf Size:249K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06VL/DDesigner's Data SheetMTB50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface

0.6. mtp50n06vl.pdf Size:195K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06VL/DDesigner's Data SheetMTP50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorN Channel Enhanceme

0.7. mtp50n06vrev3.pdf Size:179K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/DDesigner's Data SheetMTP50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorN Channel Enhancem

0.8. mtp50n06el.pdf Size:232K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06EL/DDesigner's Data SheetMTP50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorN Channel Enh

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06EL/DAdvance InformationMTB50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorsTMOS POWER FET

0.10. mtp50n06v.pdf Size:166K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/DDesigner's Data SheetMTP50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorN Channel Enhancem

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06VL/DDesigner's Data SheetMTB50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface

0.12. mtb50n06v.pdf Size:248K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06V/DDesigner's Data SheetMTB50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface Mo

0.13. mtb50n06vrev3.pdf Size:289K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06V/DDesigner's Data SheetMTB50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface Mo

0.14. mtb50n06elrev1.pdf Size:97K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06EL/DAdvance InformationMTB50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorsTMOS POWER FET

0.15. phd50n06lt.pdf Size:156K _philips

Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

0.16. phb50n06t 1.pdf Size:56K _philips

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 50 Atrench technology the devic

0.17. php50n06lt 3.pdf Size:65K _philips

0.18. phb50n06lt.pdf Size:55K _philips

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 50 Athe device fea

0.19. php50n06 1.pdf Size:54K _philips

Philips Semiconductors Product specification PowerMOS transistor PHP50N06 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 52 ASwitched Mode Power Supplies Ptot Total power dissipation 150 W(SMPS), mo

0.20. stv50n06.pdf Size:320K _st

0.21. stp50n06-.pdf Size:201K _st

STP50N06STP50N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP50N06 60 V

0.22. stp50n06l.pdf Size:397K _st

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0.24. stp50n06l-fi.pdf Size:404K _st

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0.25. fqp50n06l.pdf Size:694K _fairchild_semi

May 2001TMQFETFQP50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been especially t

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October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially

0.27. fqp50n06.pdf Size:644K _fairchild_semi

TMQFETFQP50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to Fast

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October 2008QFETFQB50N06L / FQI50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has bee

0.30. fqpf50n06.pdf Size:628K _fairchild_semi

May 2001TMQFETFQPF50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to

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RFG50N06, RFP50N06, RF1S50N06SMData Sheet January 200250A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silico

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May 2001TMQFETFQPF50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32.6A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been especially

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Data Sheet4V Drive Nch MOSFET RSD150N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner ci

0.36. rsd150n06fra.pdf Size:1006K _rohm

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD150N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationsSwitchingPackaging spec

0.37. rsd050n06fra.pdf Size:1067K _rohm

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD050N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specif

0.38. rsd050n06.pdf Size:1224K _rohm

Data Sheet4V Drive Nch MOSFET RSD050N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner circ

0.39. rsd050n06tl.pdf Size:1225K _rohm

0.40. sqd50n06-09l.pdf Size:170K _vishay

SQD50N06-09Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.009 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.013 100 % Rg and UIS TestedID (A) 50 Compliant to RoHS Directive 2002/95/ECConfiguration Singl

0.41. sqr50n06-07l.pdf Size:139K _vishay

SQR50N06-07LVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0076 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.009 Package with Low Thermal ResistanceID (A) 50 100 % Rg and UIS TestedConfiguration Single AEC-Q101 Qu

0.42. sum50n06-16l.pdf Size:152K _vishay

SUM50N06-16LVishay SiliconixN-Channel 60-V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.016 at VGS = 10 V50RoHS*600.022 at VGS = 4.5 V43 COMPLIANTDTO-263GDRAIN connected to TABG D STop ViewSOrdering Information: SUM50N06-16LSUM50N06-1

0.43. sqp50n06-09l.pdf Size:127K _vishay

SQP50N06-09Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.009 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.013 Material categorization:ID (A) 50For definitions of compliance please seeConfiguration Singleww

0.44. sqd50n06-07l.pdf Size:168K _vishay

SQD50N06-07Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0076 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.009 Package with Low Thermal ResistanceID (A) 50 100 % Rg and UIS TestedConfiguration Single

0.45. sud50n06-07l.pdf Size:69K _vishay

New ProductSUD50N06-07LVishay SiliconixN-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)c 175 C Junction Temperature0.0074 at VGS = 10 V RoHS 9660COMPLIANT 0.0088 at VGS = 4.5 V 88DTO-252GDrain Connected to TabG D STop ViewSOrdering Information: SUD50N06-07L-E3 (Lead (Pb)-

0.46. sud50n06.pdf Size:71K _vishay

SUD50N06-09LVishay SiliconixN-Channel 60 V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.0093 at VGS = 10 V 50RoHS*600.0122 at VGS = 4.5 V 50 COMPLIANTTO-252DGDrain Connected to TabG D STop ViewSOrdering Information: SUD50N06-09LSUD50N06

0.47. sud50n06-09l.pdf Size:157K _vishay

SUD50N06-09LVishay SiliconixN-Channel 60 V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.0093 at VGS = 10 V 50 Material categorization:600.0122 at VGS = 4.5 V 50 For definitions of compliance please see www.vishay.com/doc?99912TO-252DGDrain Connected

0.48. sud50n06-08h.pdf Size:70K _vishay

New ProductSUD50N06-08HVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)c Qg (Typ) 175 C Junction Temperature0.0078 at VGS = 10 V RoHS 60 93 94 100 % Rg Tested COMPLIANT High Threshold at High TemperatureTO-252DGDrain Connected to TabG D STop ViewSOrdering In

0.49. ipb050n06ng ipp050n06ng.pdf Size:731K _infineon

IPP050N06N G IPB050N06N G Power-TransistorProduct SummaryFeaturesV D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>=R 4 7 m + >= =O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' #) ' ' Package O O Mar

0.50. ipd50n06s2l-13.pdf Size:148K _infineon

0.51. ipd350n06lg.pdf Size:1008K _infineon

% # ! % (>.;?6?@%>EFeaturesD P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>mWD n) m xP ( 381>>581>35=5>C

0.52. ipd50n06s4l-12 ipd50n06s4l-12 ds 10.pdf Size:163K _infineon

IPD50N06S4L-12OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 12mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4L-12 PG-TO252-3-11 4N06L12Maximum rat

0.53. ipd50n06s4l-08 ipd50n06s4l-08 ds 10.pdf Size:162K _infineon

IPD50N06S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 7.8mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4L-08 PG-TO252-3-11 4N06L08Maximum ra

0.54. ipd50n06s2-14 ipd50n06s2-14 ds 1 1.pdf Size:149K _infineon

IPD50N06S2-14 Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 14.4mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD50N06S2-14

0.55. ipd50n06s4-09 ipd50n06s4-09 ds 12.pdf Size:164K _infineon

IPD50N06S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 9.0mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4-09 PG-TO252-3-11 4N0609Maximum ratings, a

0.56. ipd250n06n3.pdf Size:618K _infineon

pe # ! ! #:A03 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

0.57. spd50n06s2-14.pdf Size:268K _infineon

SPD50N06S2-14OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 14.4 m Enhancement modeID 50 A 175C operating temperatureP- TO252 -3-11 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPD50N06S2-14 P- TO252 -3-11 Q67060-S7418PN0614Maximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbo

0.58. ixtq150n06p.pdf Size:148K _ixys

IXTQ 150N06P VDSS = 60 VPolarHTTMID25 = 150 APower MOSFET RDS(on) 10 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 175 C60 VVDGR TJ = 25 C to 175 C; RGS = 1 M 60 VVGS Continuous 20 VGVGSM Transient 30 VD(TAB)SID25 TC = 25 C 150 AIDRMS Ext

0.59. mcac50n06y.pdf Size:899K _mcc

MCAC50N06YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 60 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=48V, VGS=0V, TJ=25CZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshol

0.60. oms150n06f.pdf Size:40K _omnirel

OMS150N06FL OMS60L60FLPreliminary Data SheetOMS120N10FL OMS50F60FLH-BRIDGE, MULTI-CHIP MODULES IN ANINDUSTRIAL ISOLATED PACKAGE60 To 600 Volt, 50 To 150 Amp Modules,H-Bridge ConfigurationFEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Easy-To-Connect To PackageDESCRIPTIONThese modules are ideally suited for high d

0.61. fqb50n06 fqi50n06.pdf Size:1062K _onsemi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.62. fqp50n06.pdf Size:645K _onsemi

0.63. 50n06l-tn3-r 50n06g-tn3-r 50n06l-tnd-r 50n06g-tnd-r 50n06l-tq2-t 50n06g-tq2-t 50n06l-tq2-r 50n06g-tq2-r.pdf Size:333K _utc

0.64. 50n06l-ta3-t 50n06g-ta3-t 50n06l-tf3-t 50n06g-tf3-t 50n06l-tf3t-t 50n06g-tf3t-t 50n60l-tm3-t 50n60g-tm3-t.pdf Size:333K _utc

0.65. utt50n06.pdf Size:352K _utc

UNISONIC TECHNOLOGIES CO., LTD UTT50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50N06 is an N-channel power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance.The UTC UTT50N06 is generally applied in low power switching mode power appliances and electronic ballast.

0.66. utc50n06l.pdf Size:145K _utc

UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1It is mainly suitable electronic ballast, and low po

0.67. utt150n06.pdf Size:190K _utc

UNISONIC TECHNOLOGIES CO., LTD UTT150N06 Preliminary Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT150N06 is generally applied in synchronous Rectification or DC t

0.68. rfg50n06le rfp50n06le rf1s50n06lesm.pdf Size:154K _intersil

RFG50N06LE, RFP50N06LE, RF1S50N06LESMData Sheet October 1999 File Number 4072.350A, 60V, 0.022 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 50A, 60VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproa

0.69. rfp50n06.pdf Size:74K _intersil

RFG50N06, RFP50N06, RF1S50N06SMData Sheet July 1999 File Number 3575.450A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilizati

0.70. ssd50n06-15d.pdf Size:381K _secos

SSD50N06-15D N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power m

0.71. kf50n06p.pdf Size:63K _kec

KF50N06PSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction , electronic lamp ballasts based on hal

0.72. cep50n06 ceb50n06.pdf Size:370K _cet

CEP50N06/CEB50N06N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

0.73. am50n06-20d.pdf Size:106K _analog_power

Analog Power AM50N06-20DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 20 @ VGS = 10V 41converters and power management in portable and 6029 @ VGS = 4.5V 34batte

0.74. am50n06-15d.pdf Size:289K _analog_power

Analog Power AM50N06-15DN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)13 @ VGS = 10V51 Low thermal impedance 6018 @ VGS = 4.5V44 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

0.75. jcs50n06vh jcs50n06rh jcs50n06ch jcs50n06fh.pdf Size:1614K _jilin_sino

N RN-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge

0.76. mtn50n06e3.pdf Size:324K _cystek

Spec. No. : C445E3 Issued Date : 2009.05.12 CYStech Electronics Corp.Revised Date : 2013.02.26 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS 60VRDSON(MAX) 22 m MTN50N06E3 ID 50ADescription The MTN50N06E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

0.77. brb50n06.pdf Size:756K _blue-rocket-elect

BRB50N06(BRCS50N06B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

0.78. br50n06.pdf Size:1026K _blue-rocket-elect

BR50N06 Rev. F Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

0.79. brd50n06.pdf Size:773K _blue-rocket-elect

BRD50N06 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

0.80. 50n06a 50n06af 50n06f 50n06g.pdf Size:418K _nell

RoHS 50N06 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(50A, 60Volts)DESCRIPTIOND The Nell 50N06 is a three-terminal silicon Ddevice with current conduction capabilityof 50A, fast switching speed, low on-stateresistance, breakdown voltage rating of 60V,and max. threshold voltage of 4 volts.GS They are designed for use in applications

0.81. hfp50n06.pdf Size:292K _shantou-huashan

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~1751G Tj Operating Junction Temperature 1502D PD Allowable Power Dissipation

0.82. hfp50n06v.pdf Size:617K _shantou-huashan

Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06VN-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. DC/DC converters Low Power Switching mode power appliances. Other switching applications. 1- G 2-D 3-S Features 50A, 60V(See Note), RDS(on)

0.83. irf50n06.pdf Size:120K _china

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0.84. cm50n06.pdf Size:125K _jdsemi

RCM50N06 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 2 3 TO-220 4

0.85. ftk50n06 ftk50n06p f.pdf Size:222K _first_silicon

SEMICONDUCTORFTK50N06P / FTECHNICAL DATAPower MOSFET50 Amps, 60 VoltsN-CHANNEL POWER MOSFET P :1TO-220 DESCRIPTION The FTK50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max F :threshold voltages of 4 volt. 1It is mainly suitable electronic

0.86. ftk50n06d.pdf Size:336K _first_silicon

SEMICONDUCTORFTK50N06DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

0.87. ftk50n06dd.pdf Size:255K _first_silicon

SEMICONDUCTORFTK50N06DDTECHNICAL DATAN-Channel Power MOSFET (60V/50A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Rating Symbol Unit V 60 V DSS

0.88. svd50n06t svd50n06d svd50n06m svd50n06mj.pdf Size:519K _silan

SVD50N06T/D/M/MJ 50A60V N 2SVD50N06T/D/M/MJ N MOS VDMOS 113TO-252-2L3

0.89. ms50n06.pdf Size:249K _bruckewell

MS50N06 N-Channel Enhancement Mode Power MOSFET Description The MS50N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

0.90. wfp50n06c.pdf Size:586K _winsemi

WFP50N06CWFP50N06CWFP50N06CWFP50N06CSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesR (Max 23m)@V =10V DS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usin

0.91. sfp50n06r.pdf Size:747K _winsemi

SFP50N06RSFP50N06RSFP50N06RSFP50N06RSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max0.023)@V =10VDS(on) GS Gate Charge(Typical 25nC) Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produced using Winsemis trench layout-basedprocess. This technology improv

0.92. sfp50n06.pdf Size:476K _winsemi

SFP50N06SFP50N06SFP50N06SFP50N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max 22m)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Win

0.93. wfp50n06.pdf Size:585K _winsemi

WFP50N06WFP50N06WFP50N06WFP50N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesR (Max 22m)@V =10V DS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Wi

0.94. chm50n06pagp.pdf Size:97K _chenmko

CHENMKO ENTERPRISE CO.,LTDCHM50N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 36 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

0.95. chm50n06ngp.pdf Size:68K _chenmko

CHENMKO ENTERPRISE CO.,LTDCHM50N06NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 50 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.

0.96. fhp50n06c.pdf Size:374K _feihonltd

0.97. fhp50n06 fhu50n06d fhd50n06d.pdf Size:738K _feihonltd

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt

0.98. fhp50n06a.pdf Size:242K _feihonltd

0.99. fhu50n06a fhd50n06a.pdf Size:299K _feihonltd

0.100. fha150n06c.pdf Size:765K _feihonltd

N N-CHANNEL MOSFET FHA150N06C MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 55 V Crss ( 850pF) Low Crss (typical 850pF ) Rdson-typ @Vgs=10V 7.2 m Fast switching Qg-typ 118nC 100% 100% avalanche tested dv/dt Improved

0.101. cs50n06.pdf Size:249K _foshan

BR50N06(CS50N06) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C

0.102. kia50n06b.pdf Size:394K _kia

50A60V50N06BN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =10.5m@ V =10VDS(on) GS Lead free and green device available Low Rds-on to minimize conductive loss High avalanche current2. Applications Power supply UPS Battery management system3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1of 6 Rev 1.1JAN2014

0.103. cs50n06d.pdf Size:253K _lzg

BRD50N06(CS50N06D) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C

0.104. me50n06t me50n06t-g.pdf Size:1138K _matsuki_electric

ME50N06T/ME50N06T-GN-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)22m@VGS=10V The ME50N06T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit

0.105. me50n06a me50n06a-g.pdf Size:465K _matsuki_electric

ME50N06A/ME50N06A-G N- Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)22m@VGS=10V The ME50N06A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit

0.106. sw50n06.pdf Size:345K _samwin

SAMWIN SW50N06General DescriptionFeaturesThis power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This N-Channel MOSFETtechnology enable power MOSFET to have better BVDSS (Minimum) : 60Vcharacteristics, such as fast switching time, low on RDS(ON) (Maximum) : 0.023ohmresistance, low gate charge and especially excellent ID : 50 Aavalanche character

0.107. hfi50n06 hfw50n06.pdf Size:237K _semihow

Nov 2009BVDSS = 60 VRDS(on) = 18 mHFW50N06 / HFI50N06ID = 50 A60V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW50N06 HFI50N06 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operati

0.108. hfs50n06.pdf Size:227K _semihow

July 2005BVDSS = 60 VRDS(on) = 18 mHFS50N06ID = 50 A60V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) :

0.109. hx50n06-ta3 hx5n6.pdf Size:929K _sipower

0.110. sg50n06t.pdf Size:101K _sirectifier

SG50N06T, SG50N06DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0

0.111. sg50n06ds.pdf Size:152K _sirectifier

SG50N06S, SG50N06DSDiscrete IGBTsC Dim. Millimeter InchesEDimensions SOT-227(ISOTOP)Min. Max. Min. Max.A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169E 4.09 4.29 0.161 0.169G=Gate, C=Collector, F 14.91 15.11 0.587 0.595G 30.12 30.30 1.186 1.193E=EmitterH 37.80 38.20 1.489 1.505J 11.68 12.22 0.460 0.481K 8.92 9.60 0

0.112. sg50n06dt.pdf Size:101K _sirectifier

0.113. sg50n06s.pdf Size:152K _sirectifier

0.114. sg50n06d2s.pdf Size:149K _sirectifier

SG50N06D2S, SG50N06D3SDiscrete IGBTsDim. Millimeter InchesDimensions SOT-227(ISOTOP)Min. Max. Min. Max.A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169E 4.09 4.29 0.161 0.169F 14.91 15.11 0.587 0.595G 30.12 30.30 1.186 1.193H 37.80 38.20 1.489 1.505J 11.68 12.22 0.460 0.481K 8.92 9.60 0.351 0.378L 0.76 0.84 0.030 0.033

0.115. sii50n06.pdf Size:1159K _sirectifier

SII50N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 75(50) TC= 25(80)oC, Tvj= 150oC AICRM 100 TC= 80oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 280 W_VGES +20VDiode Wechselrichter/ Diode Inverter VRRM 600 VIF 50 AIFRM10

0.116. sii150n06.pdf Size:1093K _sirectifier

SII150N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 180(150) TC= 25(60)oC AICRM 300 TC= 60oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 595 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 150 AIFRM300 tP =1ms A2VR

0.117. sg50n06d3s.pdf Size:149K _sirectifier

0.118. dfp50n06.pdf Size:1124K _thinkisemi

DFP50N06PbDFP50N06Pb Free Plating Product50A,60V Heatsink Planar N-Channel Power MOSFETFeatures2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 VBVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF)RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche testedID = 50A

0.119. hs50n06pa.pdf Size:1122K _thinkisemi

HS50N06PAPbHS50N06PAPb Free Plating Product50A,60V Heatsink Planar N-Channel Power MOSFETFeatures2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 VBVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF)RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche testedID = 50A

0.120. ad50n06s.pdf Size:1054K _anbon

AD50N06S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 60V 20m@10V 50A Feature Application High density cell design for ultra low Rdson Power switching application Fully characterized avalanche voltage and current Hard switched and high frequency circuits Good stability and uniformity with high EAS Uninterruptible power supply Excellent p

0.121. cs50n06f cs50n06p cs50n06u cs50n06d.pdf Size:499K _convert

nvertSuzhou Convert Semiconductor Co ., Ltd.CS50N06F,CS50N06P,CS50N06U,CS50N06D60V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS50N06F TO-

0.122. hd50n06d hu50n06d.pdf Size:2042K _haolin_elec

Nov 2019BVDSS = 60 VRDS(on) = 15 mHD50N06D / HU50N06DID = 50 A60V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD50N06D HU50N06D Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.)

0.123. ptd50n06.pdf Size:1316K _cn_puolop

PTD50N06 60V/50A N-Channel Advanced Power MOSFET Features General Features Low On-Resistance VDS =60V,ID =50A Fast Switching RDS(ON)

0.124. sk50n06a.pdf Size:1515K _cn_shikues

SK50N06A60V N-Channel MOSFET BVDSS RDS(ON),typ. ID General Features 60V 13.5m 55A Proprietary New Trench Technology RDS(ON),typ.=13.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications G Automotive D S DC Motor Control Class D Amplifier TO-252 Package No to Scale T =25 unless otherwise sp

0.125. tx50n06.pdf Size:1312K _xds

TX50N06N channel 60V MOSFETDescription FeaturesThe TX50N06 is the N-Channel logic enhancementVDS60Vmode power field effect transistors are produced using high cellRDS(on)Max.20mdensity, DMOS trench technology.This high density process isIDespecially tailored to minimize on-state resistance.These50Adevices are particularly suited for low voltage application. High

0.126. sqd50n06-09l.pdf Size:1411K _cn_vbsemi

SQD50N06-09Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

0.127. ceu50n06.pdf Size:827K _cn_vbsemi

CEU50N06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit U

0.128. hs50n06da.pdf Size:988K _cn_vbsemi

HS50N06DAwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

0.129. suu50n06-07l.pdf Size:744K _cn_vbsemi

SUU50N06-07Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 55 Material categorization:600.012 at VGS = 4.5 V 47TO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Sy

0.130. vbzl50n06.pdf Size:932K _cn_vbsemi

VBZL50N06www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS 30V Compliant to RoHS Directive 2011/65/EURDS(on) VGS = 10 V 3 mRDS(on) VGS = 4.5 V 4 mAPPLICATIONSID 150A OR-ingConfiguration Single Server DC/DCDD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE M

0.131. cmd50n06b.pdf Size:860K _cn_vbsemi

CMD50N06Bwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

0.132. ipd50n06s2-14.pdf Size:824K _cn_vbsemi

IPD50N06S2-14www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Li

0.133. vbzfb50n06.pdf Size:840K _cn_vbsemi

VBZFB50N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.010 Material categorization:RDS(on) () at VGS = 4.5 V 0.012ID (A) 50Configuration SingleTO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

0.134. vbze50n06.pdf Size:1066K _cn_vbsemi

VBZE50N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.009 at VGS = 10 V 60 Material categorization:600.011at VGS = 4.5 V 50DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

0.135. fqd50n06.pdf Size:860K _cn_vbsemi

FQD50N06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit U

0.136. vbzm50n06.pdf Size:834K _cn_vbsemi

VBZM50N06www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.013 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

0.137. fqb50n06.pdf Size:819K _cn_vbsemi

FQB50N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

0.138. sud50n06-09l.pdf Size:899K _cn_vbsemi

SUD50N06-09Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

0.139. yjb150n06bq.pdf Size:456K _cn_yangzhou_yangjie_elec

RoHS COMPLIANT YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications

0.140. yjp150n06aq.pdf Size:564K _cn_yangzhou_yangjie_elec

RoHS COMPLIANT YJP150N06AQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications

0.141. hm50n06k.pdf Size:577K _cn_hmsemi

HM50N06KN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)

0.142. hms150n06d.pdf Size:590K _cn_hmsemi

HMS150N06DN-Channel Super Trench Power MOSFET Description The HMS150N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti

0.143. hm50n06d.pdf Size:730K _cn_hmsemi

HM50N06D N-Channel Enhancement Mode Power MOSFET Description The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =50A RDS(ON)

0.144. hm50n06a.pdf Size:927K _cn_hmsemi

HM50N06AN-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

0.145. hm50n06.pdf Size:588K _cn_hmsemi

HM50N06N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)

0.146. hm50n06i.pdf Size:529K _cn_hmsemi

HM50N06IN-Channel Enhancement Mode Power MOSFET Description The HM50N06I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

0.147. hm50n06ka.pdf Size:716K _cn_hmsemi

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

0.148. fqp50n06l.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor FQP50N06LDESCRIPTIONDrain Current I =50A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingSwitch mode power supplies

0.149. ipd350n06l.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD350N06L,IIPD350N06LFEATURESStatic drain-source on-resistance:RDS(on)35mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Ga

0.150. fqp50n06.pdf Size:231K _inchange_semiconductor

isc N-Channel MOSFET Transistor FQP50N06DESCRIPTIONDrain Current I =50A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingSwitch mode power supplies

0.151. 50n06fi.pdf Size:225K _inchange_semiconductor

isc N-Channel MOSFET Transistor 50N06FIDESCRIPTIONDrain Current I =27A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingSwitc

0.152. phd50n06lt.pdf Size:261K _inchange_semiconductor

Isc N-Channel MOSFET Transistor PHD50N06LTFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

0.153. fqd50n06.pdf Size:249K _inchange_semiconductor

isc N-Channel MOSFET Transistor FQD50N06FEATURESDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingSwitch mode power suppliesDC-DC converters

0.154. mtp50n06v.pdf Size:145K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor MTP50N06V FEATURES Drain Current ID=42A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.028(Max) DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these

0.155. fqpf50n06.pdf Size:202K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQPF50N06FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIM

0.156. rfp50n06.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor RFP50N06DESCRIPTIONDrain Current I =50A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Designed for use in applications such as swithingRegulators,switc

0.157. 150n06y.pdf Size:484K _chongqing_pingwei

150N06Y150 Amps,60 Volts N-CHANNEL MOSFETFEATURETO-247 150A,60V,R =6m@V =10V/30ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT150N06YDrain-Source Voltage V 60DSSVGate-Source Voltage V 30GSSContinuous

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF1405 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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