All MOSFET. 50N06 Datasheet

 

50N06 Datasheet and Replacement


   Type Designator: 50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-220 TO-263 TO-251 TO-252 TO-220F
 

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50N06 Datasheet (PDF)

 ..1. Size:339K  utc
50n06.pdf pdf_icon

50N06

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-263 TO-251The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 11It is mainly suitable electronic

 ..2. Size:2133K  shenzhen
50n06.pdf pdf_icon

50N06

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-TransistorProduct SummaryFeaturesV 60 VDS For fast switching converters and sync. rectificationR 15mDS(on),max SMDversion N-channel enhancement - normal levelI 50 AD 175 C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant50N06Type 50N062113 23

 ..3. Size:2391K  goford
50n06.pdf pdf_icon

50N06

GOFORD50N06Description Features VDSS RDS(ON) IDVDSS RDS(ON) ID @ (typ)@10V (typ)10V 19m 50A60V 60V 19m 50A Fast switching 100% avalanche tested Improved dv/dt capability Application UPS High efficiency switch mode power supplies Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO-

 ..4. Size:1133K  cn wxdh
50n06 f50n06 i50n06 e50n06 b50n06 d50n06.pdf pdf_icon

50N06

50N06/F50N06/I50N06/E50N06/B50N06/D50N0660A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.5mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resistance Low ga

Datasheet: 15N06 , 12N10 , 15N20 , 19N10 , 22N20 , 25N06 , 25N10 , 30N06 , 8N60 , 60N06 , 60N08 , 6N10 , 70N06 , 75N75 , 7N10 , 7N10Z , 80N08 .

Keywords - 50N06 MOSFET datasheet

 50N06 cross reference
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