50N06 datasheet, подбор замены

 ..1. Size:339K  utc
 50n06.pdf 

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-263 TO-251 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 1 It is mainly suitable electronic

 ..2. Size:2133K  shenzhen
 50n06.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-Transistor Product Summary Features V 60 V DS For fast switching converters and sync. rectification R 15 m DS(on),max SMDversion N-channel enhancement - normal level I 50 A D 175 C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant 50N06 Type 50N06 2 1 1 3 2 3

 ..3. Size:2391K  goford
 50n06.pdf 

GOFORD 50N06 Description Features VDSS RDS(ON) ID VDSS RDS(ON) ID @ (typ) @ 10V (typ) 10V 19m 50A 60V 60V 19m 50A Fast switching 100% avalanche tested Improved dv/dt capability Application UPS High efficiency switch mode power supplies Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO-

 ..4. Size:1133K  cn wxdh
 50n06 f50n06 i50n06 e50n06 b50n06 d50n06.pdf 

50N06/F50N06/I50N06/ E50N06/B50N06/D50N06 60A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 10.5m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low ga

 ..5. Size:1202K  umw-ic
 50n06.pdf 

R UMW UMW 50N06 60V N-Channel Enhancement Mode Power MOSFET UMW 50N06 General Description The 50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =50A RDS(ON),12m (Typ) @ VGS =10V RDS(ON),16m (Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and L

 ..6. Size:1573K  cn evvo
 50n06.pdf 

50N06 60V N-Channel Enhancement Mode Power MOSFET 50N06 General Description The 50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =50A RDS(ON),12m (Typ) @ VGS =10V RDS(ON),16m (Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge

 ..7. Size:3874K  cn tuofeng
 50n06.pdf 

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET 50N06 Product Summary V 60 V DS TO-252 TO-251 R 15 m D DS(on),max SMDversion I 50 A D S S D G G Features Equivalent Circuit For fast switching converters and sync. rectification D N-channel enhancement - normal level G 175 C operating temperature Avalanche

 ..8. Size:521K  chongqing pingwei
 50n06 50n06f 50n06b 50n06h 50n06g 50n06d.pdf 

50N06(F,B,H,G,D) 50 Amps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,R =17.5m @VGS=10V/25A DS(ON)MAX R =20m @VGS=4.5V/25A DS(ON)MAX Low gate charge Low C iss TO-220AB ITO-220AB TO-262 Fast switching 100% avalanche tested 50N06 50N06F 50N06H Improved dv/dt capability TO-263 TO-252 TO-251 50N06B 50N06G 50N06D Absolute Maximum Ratings(T =25 ,unless otherwi

 0.1. Size:828K  1
 tsp50n06m tsf50n06m.pdf 

TSP50N06M / TSF50N06M 60V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 50A, 60V, RDS(on) = 0.023 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 33nC) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avala

 0.2. Size:1126K  1
 kia50n06.pdf 

KIA50N06 Pb KIA50N06 Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features 2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 V BVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche tested ID = 50A

 0.3. Size:154K  1
 ipd50n06s2l-13.pdf 

IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark

 0.4. Size:899K  1
 mcac50n06y-tp.pdf 

MCAC50N06Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 60 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=48V, VGS=0V, TJ=25 C Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshol

 0.5. Size:330K  1
 ste250n06.pdf 

STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE VDSS RDS(on) ID STE250N06 60 V

 0.6. Size:289K  motorola
 mtb50n06vrev3.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06V/D Designer's Data Sheet MTB50N06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.028 OHM area product about

 0.7. Size:166K  motorola
 mtp50n06v.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06V/D Designer's Data Sheet MTP50N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 42 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOL

 0.8. Size:91K  motorola
 mtb50n06el.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06EL/D Advance Information MTB50N06EL TMOS E-FET. Motorola Preferred Device Power Field Effect Transistors TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL Logic Level TMOS (L2TMOS ) 50 AMPERES 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.028 OHM These TMOS Power FETs are designed fo

 0.9. Size:232K  motorola
 mtp50n06el.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06EL/D Designer's Data Sheet MTP50N06EL TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 50 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS eff

 0.10. Size:179K  motorola
 mtp50n06vrev3.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06V/D Designer's Data Sheet MTP50N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 42 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOL

 0.11. Size:217K  motorola
 mtb50n06vl.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06VL/D Designer's Data Sheet MTB50N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.032 OHM area product abou

 0.12. Size:248K  motorola
 mtb50n06v.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06V/D Designer's Data Sheet MTB50N06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.028 OHM area product about

 0.13. Size:97K  motorola
 mtb50n06elrev1.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06EL/D Advance Information MTB50N06EL TMOS E-FET. Motorola Preferred Device Power Field Effect Transistors TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL Logic Level TMOS (L2TMOS ) 50 AMPERES 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.028 OHM These TMOS Power FETs are designed fo

 0.14. Size:195K  motorola
 mtp50n06vl.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06VL/D Designer's Data Sheet MTP50N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 42 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 0.15. Size:249K  motorola
 mtb50n06vlrev2.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06VL/D Designer's Data Sheet MTB50N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.032 OHM area product abou

 0.16. Size:156K  philips
 phd50n06lt.pdf 

Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal

 0.17. Size:65K  philips
 php50n06lt 3.pdf 

Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal

 0.18. Size:56K  philips
 phb50n06t 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 50 A trench technology the devic

 0.19. Size:54K  philips
 php50n06 1.pdf 

Philips Semiconductors Product specification PowerMOS transistor PHP50N06 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 52 A Switched Mode Power Supplies Ptot Total power dissipation 150 W (SMPS), mo

 0.20. Size:55K  philips
 phb50n06lt.pdf 

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 50 A the device fea

 0.21. Size:397K  st
 stp50n06l.pdf 

STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP50N06L 60 V

 0.22. Size:201K  st
 stp50n06-.pdf 

STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP50N06 60 V

 0.23. Size:320K  st
 stv50n06.pdf 

 0.24. Size:396K  st
 stp50n06.pdf 

STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP50N06 60 V

 0.25. Size:404K  st
 stp50n06l-fi.pdf 

STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP50N06L 60 V

 0.26. Size:373K  fairchild semi
 rfg50n06 rfp50n06 rf1s50n06sm.pdf 

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

 0.27. Size:1038K  fairchild semi
 fqb50n06 fqi50n06.pdf 

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially

 0.28. Size:644K  fairchild semi
 fqp50n06.pdf 

TM QFET FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast

 0.29. Size:1015K  fairchild semi
 fqb50n06tm fqi50n06tu.pdf 

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially

 0.30. Size:670K  fairchild semi
 fqpf50n06l.pdf 

May 2001 TM QFET FQPF50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32.6A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially

 0.31. Size:1022K  fairchild semi
 fqb50n06ltm fqi50n06ltu.pdf 

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee

 0.32. Size:628K  fairchild semi
 fqpf50n06.pdf 

May 2001 TM QFET FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to

 0.33. Size:1052K  fairchild semi
 fqb50n06l fqi50n06l.pdf 

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee

 0.34. Size:694K  fairchild semi
 fqp50n06l.pdf 

May 2001 TM QFET FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially t

 0.35. Size:107K  njs
 mtp50n06v.pdf 

 0.36. Size:1067K  rohm
 rsd050n06fra.pdf 

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD050N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. Applications Switching Packaging specif

 0.37. Size:1224K  rohm
 rsd050n06.pdf 

Data Sheet 4V Drive Nch MOSFET RSD050N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. Applications Switching Packaging specifications Inner circ

 0.38. Size:1164K  rohm
 rsd150n06.pdf 

Data Sheet 4V Drive Nch MOSFET RSD150N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Applications Switching Packaging specifications Inner ci

 0.39. Size:1225K  rohm
 rsd050n06tl.pdf 

Data Sheet 4V Drive Nch MOSFET RSD050N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. Applications Switching Packaging specifications Inner circ

 0.40. Size:1006K  rohm
 rsd150n06fra.pdf 

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD150N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Applications Switching Packaging spec

 0.41. Size:152K  vishay
 sum50n06-16l.pdf 

SUM50N06-16L Vishay Siliconix N-Channel 60-V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.016 at VGS = 10 V 50 RoHS* 60 0.022 at VGS = 4.5 V 43 COMPLIANT D TO-263 G DRAIN connected to TAB G D S Top View S Ordering Information SUM50N06-16L SUM50N06-1

 0.42. Size:69K  vishay
 sud50n06-07l.pdf 

New Product SUD50N06-07L Vishay Siliconix N-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( ) ID (A)c 175 C Junction Temperature 0.0074 at VGS = 10 V RoHS 96 60 COMPLIANT 0.0088 at VGS = 4.5 V 88 D TO-252 G Drain Connected to Tab G D S Top View S Ordering Information SUD50N06-07L-E3 (Lead (Pb)-

 0.43. Size:127K  vishay
 sqp50n06-09l.pdf 

SQP50N06-09L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.009 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.013 Material categorization ID (A) 50 For definitions of compliance please see Configuration Single ww

 0.44. Size:139K  vishay
 sqr50n06-07l.pdf 

SQR50N06-07L Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0076 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.009 Package with Low Thermal Resistance ID (A) 50 100 % Rg and UIS Tested Configuration Single AEC-Q101 Qu

 0.45. Size:70K  vishay
 sud50n06-08h.pdf 

New Product SUD50N06-08H Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)c Qg (Typ) 175 C Junction Temperature 0.0078 at VGS = 10 V RoHS 60 93 94 100 % Rg Tested COMPLIANT High Threshold at High Temperature TO-252 D G Drain Connected to Tab G D S Top View S Ordering In

 0.46. Size:71K  vishay
 sud50n06.pdf 

SUD50N06-09L Vishay Siliconix N-Channel 60 V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.0093 at VGS = 10 V 50 RoHS* 60 0.0122 at VGS = 4.5 V 50 COMPLIANT TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD50N06-09L SUD50N06

 0.47. Size:157K  vishay
 sud50n06-09l.pdf 

SUD50N06-09L Vishay Siliconix N-Channel 60 V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.0093 at VGS = 10 V 50 Material categorization 60 0.0122 at VGS = 4.5 V 50 For definitions of compliance please see www.vishay.com/doc?99912 TO-252 D G Drain Connected

 0.48. Size:168K  vishay
 sqd50n06-07l.pdf 

SQD50N06-07L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0076 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.009 Package with Low Thermal Resistance ID (A) 50 100 % Rg and UIS Tested Configuration Single

 0.49. Size:170K  vishay
 sqd50n06-09l.pdf 

SQD50N06-09L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.013 100 % Rg and UIS Tested ID (A) 50 Compliant to RoHS Directive 2002/95/EC Configuration Singl

 0.50. Size:268K  infineon
 spd50n06s2-14.pdf 

SPD50N06S2-14 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 14.4 m Enhancement mode ID 50 A 175 C operating temperature P- TO252 -3-11 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPD50N06S2-14 P- TO252 -3-11 Q67060-S7418 PN0614 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbo

 0.51. Size:162K  infineon
 ipd50n06s4l-08 ipd50n06s4l-08 ds 10.pdf 

IPD50N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 7.8 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-08 PG-TO252-3-11 4N06L08 Maximum ra

 0.52. Size:618K  infineon
 ipd250n06n3.pdf 

pe # ! ! # A03 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 0.53. Size:148K  infineon
 ipd50n06s2l-13.pdf 

IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark

 0.54. Size:731K  infineon
 ipb050n06ng ipp050n06ng.pdf 

IPP050N06N G IPB050N06N G Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 4 7 m + >= = O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' #) ' ' Package O O Mar

 0.55. Size:149K  infineon
 ipd50n06s2-14 ipd50n06s2-14 ds 1 1.pdf 

IPD50N06S2-14 Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 14.4 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N06S2-14

 0.56. Size:164K  infineon
 ipd50n06s4-09 ipd50n06s4-09 ds 12.pdf 

IPD50N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 9.0 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4-09 PG-TO252-3-11 4N0609 Maximum ratings, a

 0.57. Size:1008K  infineon
 ipd350n06lg.pdf 

% # ! % (>.;?6?@ %>E Features D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> mW D n) m x P ( 381>>581>35=5>C

 0.58. Size:163K  infineon
 ipd50n06s4l-12 ipd50n06s4l-12 ds 10.pdf 

IPD50N06S4L-12 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 12 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-12 PG-TO252-3-11 4N06L12 Maximum rat

 0.59. Size:148K  ixys
 ixtq150n06p.pdf 

IXTQ 150N06P VDSS = 60 V PolarHTTM ID25 = 150 A Power MOSFET RDS(on) 10 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C60 V VDGR TJ = 25 C to 175 C; RGS = 1 M 60 V VGS Continuous 20 V G VGSM Transient 30 V D (TAB) S ID25 TC = 25 C 150 A IDRMS Ext

 0.60. Size:899K  mcc
 mcac50n06y.pdf 

MCAC50N06Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 60 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=48V, VGS=0V, TJ=25 C Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshol

 0.61. Size:40K  omnirel
 oms150n06f.pdf 

OMS150N06FL OMS60L60FL Preliminary Data Sheet OMS120N10FL OMS50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 Amp Modules, H-Bridge Configuration FEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Easy-To-Connect To Package DESCRIPTION These modules are ideally suited for high d

 0.62. Size:1062K  onsemi
 fqb50n06 fqi50n06.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.63. Size:645K  onsemi
 fqp50n06.pdf 

TM QFET FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast

 0.64. Size:145K  utc
 utc50n06l.pdf 

UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 It is mainly suitable electronic ballast, and low po

 0.65. Size:190K  utc
 utt150n06.pdf 

UNISONIC TECHNOLOGIES CO., LTD UTT150N06 Preliminary Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT150N06 is generally applied in synchronous Rectification or DC t

 0.66. Size:352K  utc
 utt50n06.pdf 

UNISONIC TECHNOLOGIES CO., LTD UTT50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50N06 is an N-channel power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT50N06 is generally applied in low power switching mode power appliances and electronic ballast.

 0.67. Size:333K  utc
 50n06l-ta3-t 50n06g-ta3-t 50n06l-tf3-t 50n06g-tf3-t 50n06l-tf3t-t 50n06g-tf3t-t 50n60l-tm3-t 50n60g-tm3-t.pdf 

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-263 TO-251 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 1 It is mainly suitable electronic

 0.68. Size:333K  utc
 50n06l-tn3-r 50n06g-tn3-r 50n06l-tnd-r 50n06g-tnd-r 50n06l-tq2-t 50n06g-tq2-t 50n06l-tq2-r 50n06g-tq2-r.pdf 

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-263 TO-251 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 1 It is mainly suitable electronic

 0.69. Size:77K  harris semi
 rfg50n06 rfp50n06 rf1s50n06 rf1s50n06sm.pdf 

RFG50N06, RFP50N06, S E M I C O N D U C T O R RF1S50N06, RF1S50N06SM 50A, 60V, Avalanche Rated N-Channel December 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 50A, 60V SOURCE rDS(ON) = 0.022 DRAIN GATE Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse Width Curve (BOTTOM SIDE METAL) UIS Rating Curve +175oC Op

 0.70. Size:74K  intersil
 rfp50n06.pdf 

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilizati

 0.71. Size:154K  intersil
 rfg50n06le rfp50n06le rf1s50n06lesm.pdf 

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level Features N-Channel Power MOSFETs 50A, 60V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approa

 0.72. Size:381K  secos
 ssd50n06-15d.pdf 

SSD50N06-15D N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power m

 0.73. Size:63K  kec
 kf50n06p.pdf 

KF50N06P SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction , electronic lamp ballasts based on hal

 0.74. Size:370K  cet
 cep50n06 ceb50n06.pdf 

CEP50N06/CEB50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

 0.75. Size:289K  analog power
 am50n06-15d.pdf 

Analog Power AM50N06-15D N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 13 @ VGS = 10V 51 Low thermal impedance 60 18 @ VGS = 4.5V 44 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 0.76. Size:106K  analog power
 am50n06-20d.pdf 

Analog Power AM50N06-20D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 20 @ VGS = 10V 41 converters and power management in portable and 60 29 @ VGS = 4.5V 34 batte

 0.77. Size:1911K  jilin sino
 jcs50n06vh jcs50n06rh jcs50n06ch jcs50n06fh.pdf 

N R N-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge

 0.78. Size:723K  jilin sino
 jt050n065wed.pdf 

N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS Package IC 50 A VCES 650V Vcesat-typ 1.6V Vge=15V APPLICATIONS General purpose inverters UPS UPS Motor control FEATURES Low gate charge Trench FS

 0.79. Size:324K  cystek
 mtn50n06e3.pdf 

Spec. No. C445E3 Issued Date 2009.05.12 CYStech Electronics Corp. Revised Date 2013.02.26 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 60V RDSON(MAX) 22 m MTN50N06E3 ID 50A Description The MTN50N06E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 0.80. Size:932K  blue-rocket-elect
 brcs50n06bd.pdf 

BRCS50N06BD Rev.A Sep.-2022 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features R C DS(on) rss Low R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications

 0.81. Size:906K  blue-rocket-elect
 brcs50n06ra.pdf 

BRCS50N06RA Rev.A Sep.-2020 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. Halogen-free Product. / Applications

 0.82. Size:837K  blue-rocket-elect
 brcs50n06dp.pdf 

BRCS50N06DP Rev.B Aug.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications

 0.83. Size:861K  blue-rocket-elect
 brcs50n06ip.pdf 

 0.84. Size:773K  blue-rocket-elect
 brd50n06.pdf 

BRD50N06 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

 0.85. Size:756K  blue-rocket-elect
 brb50n06.pdf 

BRB50N06(BRCS50N06B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

 0.86. Size:1026K  blue-rocket-elect
 br50n06.pdf 

BR50N06 Rev. F Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

 0.87. Size:833K  blue-rocket-elect
 bri50n06.pdf 

BRI50N06 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast speed switching. / Applications DC/DC

 0.88. Size:418K  nell
 50n06a 50n06af 50n06f 50n06g.pdf 

RoHS 50N06 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (50A, 60Volts) DESCRIPTION D The Nell 50N06 is a three-terminal silicon D device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. G S They are designed for use in applications

 0.89. Size:292K  shantou-huashan
 hfp50n06.pdf 

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 175 1 G Tj Operating Junction Temperature 150 2 D PD Allowable Power Dissipation

 0.90. Size:617K  shantou-huashan
 hfp50n06v.pdf 

Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06V N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. DC/DC converters Low Power Switching mode power appliances. Other switching applications. 1- G 2-D 3-S Features 50A, 60V(See Note), RDS(on)

 0.91. Size:120K  china
 irf50n06.pdf 

3 0 lmnopqrsurvwxwrnwnoxyzq zr x 45367879 8 3 97 67 6!" # $ % &0'& 3 'R % ()*+-./)0112345678()0+9221 2+*;12 +*=033?@A QCE6O5-PS2TB"NUV6S2WUNLESXWY *B>*=*21=?A>E/FE/=A1D2C@2C+G+*1; 2*@)2C +?1=)CA1AG+ AC =A1D21@*A103+H*@=)*1; IJ4 =A1@CA332C+KL@)0+9221AAC3AH;0@2=)0C;2N3AH QZ*;)ACB01=2@C21=)@2=)1A3A;?>AC2[@C2B23?3AH CE6O5-P01 >0+@+H*@=)*1;+

 0.92. Size:125K  jdsemi
 cm50n06.pdf 

R CM50N06 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 2 3 TO-220 4

 0.93. Size:336K  first silicon
 ftk50n06d.pdf 

SEMICONDUCTOR FTK50N06D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

 0.94. Size:222K  first silicon
 ftk50n06 ftk50n06p f.pdf 

SEMICONDUCTOR FTK50N06P / F TECHNICAL DATA Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET P 1 TO-220 DESCRIPTION The FTK50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max F threshold voltages of 4 volt. 1 It is mainly suitable electronic

 0.95. Size:255K  first silicon
 ftk50n06dd.pdf 

SEMICONDUCTOR FTK50N06DD TECHNICAL DATA N-Channel Power MOSFET (60V/50A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Rating Symbol Unit V 60 V DSS

 0.96. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf 

 0.97. Size:519K  silan
 svd50n06t svd50n06d svd50n06m svd50n06mj.pdf 

SVD50N06T/D/M/MJ 50A 60V N 2 SVD50N06T/D/M/MJ N MOS VDMOS 1 1 3 TO-252-2L 3

 0.98. Size:249K  bruckewell
 ms50n06.pdf 

MS50N06 N-Channel Enhancement Mode Power MOSFET Description The MS50N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 0.99. Size:747K  winsemi
 sfp50n06r.pdf 

SFP50N06R SFP50N06R SFP50N06R SFP50N06R Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features R (Max0.023 )@V =10V DS(on) GS Gate Charge(Typical 25nC) Maximum Junction Temperature Range(175 ) General Description This Power MOSFET is produced using Winsemi s trench layout-based process. This technology improv

 0.100. Size:586K  winsemi
 wfp50n06c.pdf 

WFP50N06C WFP50N06C WFP50N06C WFP50N06C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features R (Max 23m )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usin

 0.101. Size:585K  winsemi
 wfp50n06.pdf 

WFP50N06 WFP50N06 WFP50N06 WFP50N06 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features R (Max 22m )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Wi

 0.102. Size:476K  winsemi
 sfp50n06.pdf 

SFP50N06 SFP50N06 SFP50N06 SFP50N06 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features R (Max 22m )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Win

 0.103. Size:97K  chenmko
 chm50n06pagp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM50N06PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 36 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

 0.104. Size:68K  chenmko
 chm50n06ngp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM50N06NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 50 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

 0.105. Size:738K  feihonltd
 fhp50n06 fhu50n06d fhd50n06d.pdf 

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt

 0.106. Size:374K  feihonltd
 fhp50n06c.pdf 

 0.107. Size:242K  feihonltd
 fhp50n06a.pdf 

 0.108. Size:765K  feihonltd
 fha150n06c.pdf 

N N-CHANNEL MOSFET FHA150N06C MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 55 V Crss ( 850pF) Low Crss (typical 850pF ) Rdson-typ @Vgs=10V 7.2 m Fast switching Qg-typ 118nC 100% 100% avalanche tested dv/dt Improved

 0.109. Size:299K  feihonltd
 fhu50n06a fhd50n06a.pdf 

 0.110. Size:249K  foshan
 cs50n06.pdf 

 0.111. Size:394K  kia
 kia50n06b.pdf 

50A 60V 50N06B N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features R =10.5m @ V =10V DS(on) GS Lead free and green device available Low Rds-on to minimize conductive loss High avalanche current 2. Applications Power supply UPS Battery management system 3.Symbol Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1of 6 Rev 1.1JAN2014

 0.112. Size:253K  lzg
 cs50n06d.pdf 

 0.113. Size:1310K  matsuki electric
 me50n06a me50n06a-g.pdf 

ME50N06A/ME50N06A-G N- Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50N06A is the N-Channel logic enhancement mode power RDS(ON) 22m @VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi

 0.114. Size:1138K  matsuki electric
 me50n06t me50n06t-g.pdf 

ME50N06T/ME50N06T-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 22m @VGS=10V The ME50N06T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit

 0.115. Size:345K  samwin
 sw50n06.pdf 

SAMWIN SW50N06 General Description Features This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This N-Channel MOSFET technology enable power MOSFET to have better BVDSS (Minimum) 60V characteristics, such as fast switching time, low on RDS(ON) (Maximum) 0.023ohm resistance, low gate charge and especially excellent ID 50 A avalanche character

 0.116. Size:994K  sanrise-tech
 sre50n065fsud6.pdf 

Datasheet 50A 650V Trench Fieldstop IGBT with anti-parallel diode SRE50N065FSUD6 General Description Symbol The SRE50N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE50N065FSUD6 package is TO-247. Figure 1 Symbol of SRE50N

 0.117. Size:993K  sanrise-tech
 sre50n065fsu.pdf 

Datasheet 50A 650V Trench Fieldstop IGBT SRE50N065FSU General Description Symbol The SRE50N065FSU is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. G The SRE50N065FSU package is TO-247. E Features High Breakdown Voltage to 650V Figure 1 Symbol of SRE50N065

 0.118. Size:227K  semihow
 hfs50n06.pdf 

July 2005 BVDSS = 60 V RDS(on) = 18 m HFS50N06 ID = 50 A 60V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

 0.119. Size:368K  semihow
 hfp50n06a hfs50n06a.pdf 

Oct 2016 HFP50N06A / HFS50N06A 60V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 50 A Excellent Switching Characteristics RDS(on), Typ 18 100% Avalanche Tested Qg, Typ 27 nC RoHS Compliant HFP50N06A HFS50N06A Symbol TO-220 TO-220F S S

 0.120. Size:418K  semihow
 hfi50n06a hfw50n06a.pdf 

Oct 2016 HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 50 A Excellent Switching Characteristics RDS(on), Typ 18 100% Avalanche Tested Qg, Typ 27 nC RoHS Compliant HFI50N06A HFW50N06A Symbol TO-262 TO-263 D S

 0.121. Size:244K  semihow
 hrd50n06k hru50n06k.pdf 

Sep 2015 BVDSS = 60 V RDS(on) typ HRD50N06K / HRU50N06K ID = 40 A 60V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD50N06K HRU50N06K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 11.

 0.122. Size:237K  semihow
 hfi50n06 hfw50n06.pdf 

Nov 2009 BVDSS = 60 V RDS(on) = 18 m HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW50N06 HFI50N06 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Operati

 0.123. Size:929K  sipower
 hx50n06-ta3 hx5n6.pdf 

 0.124. Size:1093K  sirectifier
 sii150n06.pdf 

SII150N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 180(150) TC= 25(60)oC A ICRM 300 TC= 60oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 595 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter IF 150 A IFRM 300 tP =1ms A 2 VR

 0.125. Size:1159K  sirectifier
 sii50n06.pdf 

SII50N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 75(50) TC= 25(80)oC, Tvj= 150oC A ICRM 100 TC= 80oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 280 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter VRRM 600 V IF 50 A IFRM 10

 0.126. Size:101K  sirectifier
 sg50n06dt.pdf 

SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0

 0.127. Size:101K  sirectifier
 sg50n06t.pdf 

SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0

 0.128. Size:149K  sirectifier
 sg50n06d2s.pdf 

SG50N06D2S, SG50N06D3S Discrete IGBTs Dim. Millimeter Inches Dimensions SOT-227(ISOTOP) Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033

 0.129. Size:152K  sirectifier
 sg50n06s.pdf 

SG50N06S, SG50N06DS Discrete IGBTs C Dim. Millimeter Inches E Dimensions SOT-227(ISOTOP) Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 G=Gate, C=Collector, F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 E=Emitter H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0

 0.130. Size:149K  sirectifier
 sg50n06d3s.pdf 

SG50N06D2S, SG50N06D3S Discrete IGBTs Dim. Millimeter Inches Dimensions SOT-227(ISOTOP) Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033

 0.131. Size:152K  sirectifier
 sg50n06ds.pdf 

SG50N06S, SG50N06DS Discrete IGBTs C Dim. Millimeter Inches E Dimensions SOT-227(ISOTOP) Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 G=Gate, C=Collector, F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 E=Emitter H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0

 0.132. Size:955K  slkor
 sl50n06d sl50n06i.pdf 

SL50N06D/SL50N06I N-Channel 60-V(D-S) Power MOSFET V(BR)DSS RDS(on)MAX ID Equivalent Circuit 60 V 20m @ 10 V 50A General Description 2 SL50N06D The high voltage MOSFET uses an advanced termination 3 scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche

 0.133. Size:1124K  thinkisemi
 dfp50n06.pdf 

DFP50N06 Pb DFP50N06 Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features 2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 V BVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche tested ID = 50A

 0.134. Size:1122K  thinkisemi
 hs50n06pa.pdf 

 0.135. Size:443K  way-on
 wmk50n06ts.pdf 

WMK50N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMK50N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 60V, I = 50A DS D R

 0.136. Size:2029K  allpower
 ap50n06k.pdf 

 0.137. Size:891K  allpower
 app50n06.pdf 

 0.138. Size:1054K  anbon
 ad50n06s.pdf 

AD50N06S N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 60V 20m @10V 50A Feature Application High density cell design for ultra low Rdson Power switching application Fully characterized avalanche voltage and current Hard switched and high frequency circuits Good stability and uniformity with high EAS Uninterruptible power supply Excellent p

 0.139. Size:499K  convert
 cs50n06f cs50n06p cs50n06u cs50n06d.pdf 

nvert Suzhou Convert Semiconductor Co ., Ltd. CS50N06F,CS50N06P,CS50N06U,CS50N06D 60V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS50N06F TO-

 0.140. Size:4641K  first semi
 fir150n06pg.pdf 

FIR150N06PG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220AB Description The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

 0.141. Size:4356K  first semi
 fir50n06lg.pdf 

FIR50N06LG N-Channel Enhancement Mode Power Mosfet-E PIN Connection TO-252 Description The FIR50N06LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 0.142. Size:2042K  haolin elec
 hd50n06d hu50n06d.pdf 

Nov 2019 BVDSS = 60 V RDS(on) = 15 m HD50N06D / HU50N06D ID = 50 A 60V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD50N06D HU50N06D Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.)

 0.143. Size:513K  jiejie micro
 jmti50n06b.pdf 

JMTI50N06B Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,50A Load Switch R

 0.144. Size:1184K  jiejie micro
 jmtk50n06b.pdf 

60V, 50A, 13.7m N-channel Power Trench MOSFET JMTK50N06B Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 50 A RDS(ON)_Typ(@VGS=10V 12.2 mW Applications RDS(ON)_Typ(@VGS=4.5V 13.7 mW Load Switch PWM Application

 0.145. Size:1316K  cn puolop
 ptd50n06.pdf 

PTD50N06 60V/50A N-Channel Advanced Power MOSFET Features General Features Low On-Resistance VDS =60V,ID =50A Fast Switching RDS(ON)

 0.146. Size:1515K  cn shikues
 sk50n06a.pdf 

SK50N06A 60V N-Channel MOSFET BVDSS RDS(ON),typ. ID General Features 60V 13.5m 55A Proprietary New Trench Technology RDS(ON),typ.=13.5 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications G Automotive D S DC Motor Control Class D Amplifier TO-252 Package No to Scale T =25 unless otherwise sp

 0.147. Size:1312K  xds
 tx50n06.pdf 

TX50N06 N channel 60V MOSFET Description Features The TX50N06 is the N-Channel logic enhancement VDS 60V mode power field effect transistors are produced using high cell RDS(on)Max. 20m density, DMOS trench technology.This high density process is ID especially tailored to minimize on-state resistance.These 50A devices are particularly suited for low voltage application. High

 0.148. Size:834K  cn vbsemi
 vbzm50n06.pdf 

VBZM50N06 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.013 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

 0.149. Size:860K  cn vbsemi
 cmd50n06b.pdf 

CMD50N06B www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

 0.150. Size:988K  cn vbsemi
 hs50n06da.pdf 

HS50N06DA www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

 0.151. Size:840K  cn vbsemi
 vbzfb50n06.pdf 

VBZFB50N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.010 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.012 ID (A) 50 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

 0.152. Size:827K  cn vbsemi
 ceu50n06.pdf 

CEU50N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit U

 0.153. Size:860K  cn vbsemi
 fqd50n06.pdf 

FQD50N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit U

 0.154. Size:1066K  cn vbsemi
 vbze50n06.pdf 

VBZE50N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.009 at VGS = 10 V 60 Material categorization 60 0.011at VGS = 4.5 V 50 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

 0.155. Size:824K  cn vbsemi
 ipd50n06s2-14.pdf 

IPD50N06S2-14 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Li

 0.156. Size:819K  cn vbsemi
 fqb50n06.pdf 

FQB50N06 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source

 0.157. Size:899K  cn vbsemi
 sud50n06-09l.pdf 

SUD50N06-09L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

 0.158. Size:932K  cn vbsemi
 vbzl50n06.pdf 

VBZL50N06 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY 100 % Rg and UIS Tested VDS 30 V Compliant to RoHS Directive 2011/65/EU RDS(on) VGS = 10 V 3 m RDS(on) VGS = 4.5 V 4 m APPLICATIONS ID 150 A OR-ing Configuration Single Server DC/DC D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE M

 0.159. Size:744K  cn vbsemi
 suu50n06-07l.pdf 

SUU50N06-07L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 55 Material categorization 60 0.012 at VGS = 4.5 V 47 TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Sy

 0.160. Size:1411K  cn vbsemi
 sqd50n06-09l.pdf 

SQD50N06-09L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

 0.161. Size:564K  cn yangzhou yangjie elec
 yjp150n06aq.pdf 

RoHS COMPLIANT YJP150N06AQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications

 0.162. Size:456K  cn yangzhou yangjie elec
 yjb150n06bq.pdf 

RoHS COMPLIANT YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications

 0.163. Size:716K  cn hmsemi
 hm50n06ka.pdf 

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 0.164. Size:529K  cn hmsemi
 hm50n06i.pdf 

HM50N06I N-Channel Enhancement Mode Power MOSFET Description The HM50N06I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 0.165. Size:588K  cn hmsemi
 hm50n06.pdf 

HM50N06 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)

 0.166. Size:730K  cn hmsemi
 hm50n06d.pdf 

HM50N06D N-Channel Enhancement Mode Power MOSFET Description The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =50A RDS(ON)

 0.167. Size:927K  cn hmsemi
 hm50n06a.pdf 

HM50N06A N-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 0.168. Size:590K  cn hmsemi
 hms150n06d.pdf 

HMS150N06D N-Channel Super Trench Power MOSFET Description The HMS150N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti

 0.169. Size:577K  cn hmsemi
 hm50n06k.pdf 

HM50N06K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)

 0.170. Size:256K  cn minos
 mpg50n06p.pdf 

Silicon N-Channel Power MOSFET Description The MPG50N06 uses advanced trench technology and design to provide Excellent R . It can be used in a wide variety of DS(ON) applications. General Features V =60V,I =50A DS D R 14m @V =10V (Typ 11.0 m ) dson GS R 16m @V =4.5V (Typ 12.5m ) dson GS Low ON Resistance Low Reverse transfer capacitances 100% Single P

 0.171. Size:1036K  cn minos
 mdt50n06d.pdf 

60V N-Channel Power MOSFE Description The MDT50N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R

 0.172. Size:697K  cn minos
 mp50n06.pdf 

Silicon N-Channel Power MOSFET Description The MP50N06 uses advanced trench technology and design to provide Excellent R . It can be used in a DS(ON) wide variety of applications. General Features Schematic diagram V =60V,I =50A DS D R 14m @V =10V (Typ 11.0 m ) dson GS R n 16m @V =4.5V (Typ 12.5m ) dso GS Low ON Resistance Low Reverse transfer capacitances

 0.173. Size:1691K  cn shandong baocheng elec
 e50n06 d50n06 h50n06 t50n06.pdf 

50N06 60V N-Channel Power MOSFET TO-263 TO-252 Features Low FOM RDS(on) Qgd 100% avalanche tested Easy to use/drive RoHS compliant TO-251 TO-220 Drain Applications DC/DC Converter Battery Protection Charge/Discharge Gate Load Switch Synchronous Rectification Source Key Performance Parameters Parameter Value Unit VDS@ Tc=25 60 V RDS(on),

 0.174. Size:261K  inchange semiconductor
 phd50n06lt.pdf 

Isc N-Channel MOSFET Transistor PHD50N06LT FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 0.175. Size:242K  inchange semiconductor
 ipd350n06l.pdf 

isc N-Channel MOSFET Transistor IPD350N06L,IIPD350N06L FEATURES Static drain-source on-resistance RDS(on) 35m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Ga

 0.176. Size:231K  inchange semiconductor
 fqp50n06.pdf 

 0.177. Size:145K  inchange semiconductor
 mtp50n06v.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor MTP50N06V FEATURES Drain Current ID=42A@ TC=25 Drain Source Voltage- VDSS= 60V(Min) Static Drain-Source On-Resistance RDS(on) = 0.028 (Max) DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these

 0.178. Size:230K  inchange semiconductor
 rfp50n06.pdf 

isc N-Channel MOSFET Transistor RFP50N06 DESCRIPTION Drain Current I =50A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as swithing Regulators,switc

 0.179. Size:249K  inchange semiconductor
 fqd50n06.pdf 

isc N-Channel MOSFET Transistor FQD50N06 FEATURES Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters

 0.180. Size:202K  inchange semiconductor
 fqpf50n06.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQPF50N06 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIM

 0.181. Size:230K  inchange semiconductor
 fqp50n06l.pdf 

isc N-Channel MOSFET Transistor FQP50N06L DESCRIPTION Drain Current I =50A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching Switch mode power supplies

 0.182. Size:225K  inchange semiconductor
 50n06fi.pdf 

isc N-Channel MOSFET Transistor 50N06FI DESCRIPTION Drain Current I =27A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching Switc

 0.183. Size:484K  chongqing pingwei
 150n06y.pdf 

150N06Y 150 Amps,60 Volts N-CHANNEL MOSFET FEATURE TO-247 150A,60V,R =6m @V =10V/30A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 150N06Y Drain-Source Voltage V 60 DSS V Gate-Source Voltage V 30 GSS Continuous

 0.184. Size:2440K  cn apm
 ap50n06nf.pdf 

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 0.185. Size:824K  cn apm
 ap50n06p ap50n06t.pdf 

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 0.186. Size:1589K  cn apm
 ap50n06bd ap50n06by.pdf 

AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS D R

 0.187. Size:2272K  cn apm
 ap50n06d.pdf 

AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 0.188. Size:3648K  cn apm
 ap50n06df.pdf 

AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 0.189. Size:1600K  cn apm
 ap50n06y.pdf 

AP50N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP50N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =50A DS D R