All MOSFET. 70N06 Datasheet

 

70N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 70N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 79 nS

Drain-Source Capacitance (Cd): 530 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO-220 TO-263 TO-262

70N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

70N06 Datasheet (PDF)

0.1. rf1s70n06.pdf Size:227K _fairchild_semi

70N06
70N06

RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic

0.2. rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf Size:229K _fairchild_semi

70N06
70N06

RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic

 0.3. fqa170n06.pdf Size:690K _fairchild_semi

70N06
70N06

May 2001TMQFETFQA170N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 170A, 60V, RDS(on) = 0.0056 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC)planar stripe, DMOS technology. Low Crss ( typical 620 pF)This advanced technology has been especially tailore

0.4. sfp70n06.pdf Size:546K _samsung

70N06
70N06

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.012 Rugged Gate Oxide Technology Lower Input CapacitanceID = 70 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.009 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 0.5. sup70n06-14 sub70n06-14.pdf Size:94K _vishay

70N06
70N06

SUP/SUB70N06-14Vishay SiliconixN-Channel 60-V (D-S), 175 C MOSFETPRODUCT SUMMARY V(BR)DSS (V) rDS(on) ()ID (A)Pb-free60 0.014 Available70aRoHS*COMPLIANTTO-220AB DTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N06-14Top ViewN-Channel MOSFETSUP70N06-14Ordering Information: SUB70N06-14 SUB70N06-14-E3 (Lead (Pb)-free) SUP70N06-14-E3 (Lead (P

0.6. ipb070n06lg ipp070n06lg7.pdf Size:736K _infineon

70N06
70N06

IPB070N06L G IPP070N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

0.7. ipb070n06ng ipp070n06ng ipi070n06ngrev1.4.pdf Size:894K _infineon

70N06
70N06

IPB070N06N G IPP070N06N GIPI070N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1

0.8. ndba170n06a.pdf Size:418K _onsemi

70N06
70N06

Ordering number : ENA2250 NDBA170N06A N-Channel Power MOSFEThttp://onsemi.com 60V, 170A, 3.3m, TO-263 Features On-resistance RDS(on)=2.5m(typ.) Electrical Connection Input Capacitance Ciss=15800pF(typ.) N-channel Halogen free compliance D(2, 4)Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value UnitG(1)V Drain to Sourc

0.9. 70n06.pdf Size:339K _utc

70N06
70N06

UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching 1TO-262speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 15m@VGS = 10 V

0.10. rff70n06.pdf Size:86K _intersil

70N06
70N06

RFF70N06Data Sheet March 1999 File Number 4073.225A, 60V, 0.025 Ohm, N-Channel Power FeaturesMOSFET 25A, 60VThe RFF70N06 N-Channel power MOSFET is manufactured rDS(ON) = 0.025using the MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI circuits givesoptimum utilization of silicon, resulting

0.11. kf70n06p f.pdf Size:91K _kec

70N06
70N06

KF70N06P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF70N06PAIts mainly suitable for low viltage applications such as automotive, OCDC/DC converters and a load switch in battery powered applicationsFE DIM MILLIMETERSG_+A 9.9 0.2BB 15.95 MAXFEATURES QC 1.3+0.1/-0.05_VDSS= 60V, ID= 70A (KF70N06P) I+D 0

0.12. br70n06.pdf Size:858K _blue-rocket-elect

70N06
70N06

BR70N06(BRCS70N06R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow RDS(on), low gate charge, low Crss, fast switching. / Applications DC/DC

0.13. hfp70n06.pdf Size:849K _shantou-huashan

70N06
70N06

Shantou Huashan Electronic Devices Co.,Ltd. HFP70N06 N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 70A, 60V(See Note), RDS(on)

0.14. ftk70n06.pdf Size:570K _first_silicon

70N06
70N06

SEMICONDUCTORFTK70N06TECHNICAL DATA60V N-Channel MOSFETBVDSS = 60 VRDS(on) = 15 mFeaturesID = 70 ARDS(on) (Max 0.015 )@VGS =10VGate Charge (Typical 39nC)TO-220 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested123Maximum Junction Temperature Range (175C)1.Gate 2. Drain 3. SourceDGSAbsolute Maximum Ratings TC

0.15. ndt70n06.pdf Size:532K _kexin

70N06
70N06

SMD Type MOSFETTransistorsN-Channel Trench Power MOSFETNDT70N06TO-252Unit: mm Features+0.156.50-0.15+0.12.30 -0.1 VDS = 60V; ID = 88A +0.25.30-0.2 +0.80.50 -0.7 RDS(ON) 6.6m (VGS = 10V) Ultra Low On-Resistance High UIS and UIS 100% Test0.127+0.10.80-0.1max+ 0.11Gate2.3 0.60- 0.1+0.154.60 -0.152Drain3Source Absolute Maximum Ratings Ta =

0.16. wfp70n06.pdf Size:508K _winsemi

70N06
70N06

WFP70N06WFP70N06WFP70N06WFP70N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 70A,60V, RDS(on)(Max0.014)@VGS=10V Ultra-low Gate charge(Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General DescriptionThi

0.17. sfp70n06.pdf Size:565K _winsemi

70N06
70N06

SFP70N06SFP70N06SFP70N06SFP70N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 70A,60V, R (Max0.014)@V =10VDS(on) GS Ultra-low Gate charge(Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General Description

0.18. wfp70n06t.pdf Size:603K _winsemi

70N06
70N06

WFP70N06TWFP70N06TWFP70N06TWFP70N06TSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 68A,60V, R (Max18m)@V =10VDS(on) GS Ultra-low Gate charge(Typical 20nC) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produ

0.19. ltp70n06.pdf Size:590K _liteon

70N06
70N06

LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 14 m, DC-DC converter and DC motor control Typ = 10 m UPS ID = 70 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

0.20. hx70n06-ta3 hx70n6.pdf Size:908K _sipower

70N06
70N06

0.21. rfg70n06.pdf Size:211K _inchange_semiconductor

70N06
70N06

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor RFG70N06FEATURESWith TO-247 packagingUIS rating curvePeak current vs pulse width curveHigh power and current handling capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsABSOLUTE MAXIMUM RATIN

0.22. 70n06 .pdf Size:236K _inchange_semiconductor

70N06
70N06

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 70N06DESCRIPTIONDrain Current I =70A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in applications such as swithi

0.23. rfp70n06.pdf Size:230K _inchange_semiconductor

70N06
70N06

INCHANGE Semiconductorisc N-Channel MOSFET Transistor RFP70N06DESCRIPTIONDrain Current I =70A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Designed for use in applications such as sw

0.24. 70n06.pdf Size:231K _inchange_semiconductor

70N06
70N06

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 70N06DESCRIPTIONDrain Current I =70A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in applications such as swithi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top