All MOSFET. 70N06 Datasheet

 

70N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 70N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 79 nS

Drain-Source Capacitance (Cd): 530 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO-220_TO-263_TO-262

70N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

70N06 Datasheet (PDF)

1.1. rfg70n06_rfp70n06_rf1s70n06_rf1s70n06sm.pdf Size:229K _fairchild_semi

70N06
70N06

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs • 70A, 60V These are N-Channel power MOSFETs manufactured using • rDS(on) = 0.014Ω the MegaFET process. This process, which uses feature • Temperature Compensated PSPICE® Model sizes approaching those of LSI circuits, gives optimum utilization of silic

1.2. fqa170n06.pdf Size:690K _fairchild_semi

70N06
70N06

May 2001 TM QFET FQA170N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 170A, 60V, RDS(on) = 0.0056? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 620 pF) This advanced technology has been especially tailored to Fast

1.3. sfp70n06.pdf Size:546K _samsung

70N06
70N06

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.012 Rugged Gate Oxide Technology Lower Input Capacitance ID = 70 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.009 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

1.4. sup70n06-14_sub70n06-14.pdf Size:94K _vishay

70N06
70N06

1.5. ipb070n06lg_ipp070n06lg_rev1.27.pdf Size:736K _infineon

70N06
70N06

IPB070N06L G IPP070N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( & ! #** ( & ! Type Package Marking #* ( & ! G? O ? ? G? N

1.6. ipb070n06ng_ipp070n06ng_ipi070n06ngrev1.4.pdf Size:894K _infineon

70N06
70N06

IPB070N06N G IPP070N06N G IPI070N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! #*# ( ( ! Type Package Marking #*

1.7. 70n06.pdf Size:339K _utc

70N06
70N06

UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching 1 TO-262 speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 15m?@VGS = 10 V 1 *

1.8. rff70n06.pdf Size:86K _intersil

70N06
70N06

RFF70N06 Data Sheet March 1999 File Number 4073.2 25A, 60V, 0.025 Ohm, N-Channel Power Features MOSFET • 25A†, 60V The RFF70N06 N-Channel power MOSFET is manufactured • rDS(ON) = 0.025Ω using the MegaFET process. This process, which uses • Temperature Compensating PSPICE™ Model feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting

1.9. kf70n06p_f.pdf Size:91K _kec

70N06
70N06

KF70N06P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF70N06P A It’s mainly suitable for low viltage applications such as automotive, O C DC/DC converters and a load switch in battery powered applications F E DIM MILLIMETERS G _ + A 9.9 0.2 B B 15.95 MAX FEATURES Q C 1.3+0.1/-0.05 _ ·VDSS= 60V, ID= 70A (KF70N06P) I + D 0.8

1.10. br70n06.pdf Size:858K _blue-rocket-elect

70N06
70N06

BR70N06(BRCS70N06R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features R 小,门电荷低,C 小,开关速度快。 DS(on) rss Low RDS(on), low gate charge, low Crss, fast switching. 用途 / Applications 用于低压电路如:汽车电路、DC/DC 转换、便携

1.11. hfp70n06.pdf Size:849K _shantou-huashan

70N06
70N06

 Shantou Huashan Electronic Devices Co.,Ltd. HFP70N06 N-Channel Enhancement Mode Field Effect Transistor █ Applications TO-220 • Servo motor control. • Power MOSFET gate drivers. • DC/DC converters • Other switching applications. 1- G 2-D 3-S █ Features • 70A, 60V(See Note), RDS(on) <13mVΩ@VGS = 10 V • Fast switching • 100% avalanche tested • Min

1.12. ftk70n06.pdf Size:570K _first_silicon

70N06
70N06

SEMICONDUCTOR FTK70N06 TECHNICAL DATA 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 15 mΩ Features ID = 70 A RDS(on) (Max 0.015 Ω)@VGS =10V ■ Gate Charge (Typical 39nC) ■ TO-220 Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ 1 2 3 Maximum Junction Temperature Range (175°C) ■ 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC

1.13. ndt70n06.pdf Size:532K _kexin

70N06
70N06

SMD Type MOSFET Transistors N-Channel Trench Power MOSFET NDT70N06 TO-252 Unit: mm Features +0.15 6.50-0.15 +0.1 2.30 -0.1 VDS = 60V; ID = 88A +0.2 5.30-0.2 +0.8 0.50 -0.7 RDS(ON) 6.6m (VGS = 10V) Ultra Low On-Resistance High UIS and UIS 100% Test 0.127 +0.1 0.80-0.1 max + 0.1 1Gate 2.3 0.60- 0.1 +0.15 4.60 -0.15 2Drain 3Source Absolute Maximum Ratings Ta =

Datasheet: 22N20 , 25N06 , 25N10 , 30N06 , 50N06 , 60N06 , 60N08 , 6N10 , IRF8010 , 75N75 , 7N10 , 7N10Z , 80N08 , UF1010A , UF1010E , UF3710 , UF4N20 .

 


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