FRS430R MOSFET. Datasheet pdf. Equivalent
Type Designator: FRS430R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 60 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.52 Ohm
Package: TO257AA
FRS430R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRS430R Datasheet (PDF)
frs430.pdf
FRS430D, FRS430R,FRS430H3A, 500V, 2.52 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 3A, 500V, RDS(on) = 2.52TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRS240D , FRS240H , FRS240R , FRS244D , FRS244H , FRS244R , FRS430D , FRS430H , 13N50 , FRS440D , FRS440H , FRS440R , FRS9130D , FRS9130H , FRS9130R , FRS9140D , FRS9140H .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918