FRS430R PDF and Equivalents Search

 

FRS430R Specs and Replacement


   Type Designator: FRS430R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 60 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.52 Ohm
   Package: TO257AA
 

 FRS430R substitution

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FRS430R datasheet

 8.1. Size:55K  intersil
 frs430.pdf pdf_icon

FRS430R

FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 3A, 500V, RDS(on) = 2.52 TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒

Detailed specifications: FRS240D , FRS240H , FRS240R , FRS244D , FRS244H , FRS244R , FRS430D , FRS430H , 2SK3568 , FRS440D , FRS440H , FRS440R , FRS9130D , FRS9130H , FRS9130R , FRS9140D , FRS9140H .

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