UTT50N06 Specs and Replacement
Type Designator: UTT50N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
UTT50N06 substitution
- MOSFET ⓘ Cross-Reference Search
UTT50N06 datasheet
utt50n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50N06 is an N-channel power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT50N06 is generally applied in low power switching mode power appliances and electronic ballast. ... See More ⇒
utt50p06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT50P06 Power MOSFET -50A, -60V P-CHANNEL (D-S) POWER MOSFET 1 TO-220 DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand 1 high energy in the avalanche. This UTC UTT50P06 is suitable for l... See More ⇒
utt50p04.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT50P04 Preliminary Power MOSFET -40V, -60A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT50P04 is suitable for motor drive... See More ⇒
utt50p10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT50P10 Preliminary Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * VDS=-100V * ID =-50A * RDS(ON)... See More ⇒
Detailed specifications: UTT10N10, UTT120N06, UTT150N06, UTT20N10, UTT25N08, UTT30N08, UTT30N10, UTT36N10, IRF4905, UTT60N06, UTT60N10, UTT6N10, UTT75N08, UTT75N75, UTT80N06, UTT80N08, UTT80N75
Keywords - UTT50N06 MOSFET specs
UTT50N06 cross reference
UTT50N06 equivalent finder
UTT50N06 pdf lookup
UTT50N06 substitution
UTT50N06 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: UTT30N08
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG
Popular searches
tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102 | mj15003g | oc75 transistor | irfp260m | 2sc1213
