UTT50N06. Аналоги и основные параметры
Наименование производителя: UTT50N06
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 114 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 430 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Аналог (замена) для UTT50N06
- подборⓘ MOSFET транзистора по параметрам
UTT50N06 даташит
utt50n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50N06 is an N-channel power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT50N06 is generally applied in low power switching mode power appliances and electronic ballast.
utt50p06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT50P06 Power MOSFET -50A, -60V P-CHANNEL (D-S) POWER MOSFET 1 TO-220 DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand 1 high energy in the avalanche. This UTC UTT50P06 is suitable for l
utt50p04.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT50P04 Preliminary Power MOSFET -40V, -60A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT50P04 is suitable for motor drive
utt50p10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT50P10 Preliminary Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * VDS=-100V * ID =-50A * RDS(ON)
Другие IGBT... UTT10N10, UTT120N06, UTT150N06, UTT20N10, UTT25N08, UTT30N08, UTT30N10, UTT36N10, IRF4905, UTT60N06, UTT60N10, UTT6N10, UTT75N08, UTT75N75, UTT80N06, UTT80N08, UTT80N75
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
Popular searches
tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102 | mj15003g | oc75 transistor | irfp260m | 2sc1213




