UTT50N06 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UTT50N06
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 114 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 430 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: TO-252 TO-220
- подбор MOSFET транзистора по параметрам
UTT50N06 Datasheet (PDF)
utt50n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50N06 is an N-channel power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance.The UTC UTT50N06 is generally applied in low power switching mode power appliances and electronic ballast.
utt50p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT50P06 Power MOSFET -50A, -60V P-CHANNEL (D-S) POWER MOSFET 1TO-220 DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand 1high energy in the avalanche. This UTC UTT50P06 is suitable for l
utt50p04.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT50P04 Preliminary Power MOSFET -40V, -60A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT50P04 is suitable for motor drive
utt50p10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT50P10 Preliminary Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * VDS=-100V * ID =-50A * RDS(ON)
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AM7466N | TK12E60W | IPZA60R060P7 | CEP830G | 2SJ389L | DMP1555UFA | STB80NF06
History: AM7466N | TK12E60W | IPZA60R060P7 | CEP830G | 2SJ389L | DMP1555UFA | STB80NF06



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102 | mj15003g | oc75 transistor | irfp260m | 2sc1213