UTT50N06 - Даташиты. Аналоги. Основные параметры
Наименование производителя: UTT50N06
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 114 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 430 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: TO-252 TO-220
Аналог (замена) для UTT50N06
UTT50N06 Datasheet (PDF)
utt50n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50N06 is an N-channel power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance.The UTC UTT50N06 is generally applied in low power switching mode power appliances and electronic ballast.
utt50p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT50P06 Power MOSFET -50A, -60V P-CHANNEL (D-S) POWER MOSFET 1TO-220 DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand 1high energy in the avalanche. This UTC UTT50P06 is suitable for l
utt50p04.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT50P04 Preliminary Power MOSFET -40V, -60A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT50P04 is suitable for motor drive
utt50p10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT50P10 Preliminary Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * VDS=-100V * ID =-50A * RDS(ON)
Другие MOSFET... UTT10N10 , UTT120N06 , UTT150N06 , UTT20N10 , UTT25N08 , UTT30N08 , UTT30N10 , UTT36N10 , IRF4905 , UTT60N06 , UTT60N10 , UTT6N10 , UTT75N08 , UTT75N75 , UTT80N06 , UTT80N08 , UTT80N75 .



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