UT2327 Specs and Replacement

Type Designator: UT2327

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.7 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT-23

UT2327 substitution

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UT2327 datasheet

 ..1. Size:166K  utc
 ut2327.pdf pdf_icon

UT2327

UNISONIC TECHNOLOGIES CO., LTD UT2327 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2327L is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ... See More ⇒

 9.1. Size:102K  st
 but232.pdf pdf_icon

UT2327

BUT232V NPN TRANSISTOR POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS MOTOR CONTROL SMPS & UPS DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit ... See More ⇒

 9.2. Size:348K  st
 but232v.pdf pdf_icon

UT2327

BUT232V NPN TRANSISTOR POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS MOTOR CONTROL SMPS & UPS DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol... See More ⇒

 9.3. Size:224K  utc
 ut2321.pdf pdf_icon

UT2327

UNISONIC TECHNOLOGIES CO., LTD UT2321 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒

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Detailed specifications: UTT80N75, UDN302, UT2301, UT2301Z, UT2305, UT2305A, UT2311, UT2321, IRF530, UT3419, UT6302, 90N02, UK3018, UK3019, UK3919, UML2502, UP9T15G

Keywords - UT2327 MOSFET specs

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