All MOSFET. UT2327 Datasheet

 

UT2327 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT2327
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 9.7 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT-23

 UT2327 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT2327 Datasheet (PDF)

 ..1. Size:166K  utc
 ut2327.pdf

UT2327 UT2327

UNISONIC TECHNOLOGIES CO., LTD UT2327 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2327L is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

 9.1. Size:102K  st
 but232.pdf

UT2327 UT2327

BUT232VNPN TRANSISTOR POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: MOTOR CONTROL SMPS & UPS DC/DC & DC/AC CONVERTERSISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit

 9.2. Size:348K  st
 but232v.pdf

UT2327 UT2327

BUT232VNPN TRANSISTOR POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: MOTOR CONTROL SMPS & UPS DC/DC & DC/AC CONVERTERSISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol

 9.3. Size:224K  utc
 ut2321.pdf

UT2327 UT2327

UNISONIC TECHNOLOGIES CO., LTD UT2321 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDMS7656AS

 

 
Back to Top