FRS9130D Specs and Replacement

Type Designator: FRS9130D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 176 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.565 Ohm

Package: TO257AA

FRS9130D substitution

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FRS9130D datasheet

 7.1. Size:55K  intersil
 frs9130.pdf pdf_icon

FRS9130D

FRS9130D, FRS9130R, FRS9130H 6A, -100V, 0.565 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 6A, -100V, RDS(on) = 0.565 TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(S... See More ⇒

 9.1. Size:54K  intersil
 frs9140.pdf pdf_icon

FRS9130D

FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 11A, -100V, RDS(on) = 0.315 TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒

Detailed specifications: FRS244H, FRS244R, FRS430D, FRS430H, FRS430R, FRS440D, FRS440H, FRS440R, SI2302, FRS9130H, FRS9130R, FRS9140D, FRS9140H, FRS9140R, FRS9230D, FRS9230H, FRS9230R

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