UT4414 MOSFET: N-Ch, 30V, 8.5A. Full datasheet with pinout, specifications and replacement transistor list

UT4414 Datasheet (PDF)

..1. Size:119K utc
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UNISONIC TECHNOLOGIES CO., LTD UT4414 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT4414 is an N-channel enhancement mode FET with excellent trench technology to provide customers perfect RDS(ON) and low gate charge. The source leads are separated to allow a Kelvin SOP-8connection to the source, which may be used to bypas

9.1. Size:191K utc
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UNISONIC TECHNOLOGIES CO., LTD UT4413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=8.5m @ VGS= -10V * Low capacitance * Low gate charge *

9.2. Size:218K utc
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UNISONIC TECHNOLOGIES CO., LTD UT4410 Power MOSFET N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTCs high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be

9.3. Size:262K utc
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UNISONIC TECHNOLOGIES CO., LTD UT4411 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 32m @VGS = 10 V * Low capacitance * Optimized gate char

Datasheet: UT3055 , UT3400 , UT3404 , UT3406 , UT3414 , UT3416 , UT3418 , UT3N01Z , IRFZ24N , UT45N03 , UT4800 , UT50N03 , UT6402 , UT75N02 , UT8205A , UTD351 , UTD410 .