UT6402 Datasheet and Replacement
Type Designator: UT6402
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.1 nS
Cossⓘ - Output Capacitance: 102 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
Package: SOT-23 SOT-26
UT6402 substitution
UT6402 Datasheet (PDF)
ut6402.pdf

UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE 31 DESCRIPTION 2SOT-23The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching 4speed, low on-resistance, excellent thermal and electrical 5capabilities, operation with low gate voltages. 6This device is suitable for use as a load swit
ut6401.pdf

UNISONIC TECHNOLOGIES CO., LTD UT6401 Power MOSFET 5A, 30V P-CHANNEL ENHANCEMENT MODE 31 DESCRIPTION 2SOT-23The UTC UT6401 is P-channel enhancement mode Power (SC-59)MOSFET, designed with high density cell, with fast switching 4speed, low on-resistance, excellent thermal and electrical 5capabilities, operation with low gate charge. 6This device is suitable for u
Datasheet: UT3414 , UT3416 , UT3418 , UT3N01Z , UT4414 , UT45N03 , UT4800 , UT50N03 , IRF520 , UT75N02 , UT8205A , UTD351 , UTD410 , UTD452 , UTM2054 , UTM2513 , UTN3055 .
History: IRFR15N20D | R6006KND3 | 2SJ380 | HM4240 | 50N06F | SIHLI520G
Keywords - UT6402 MOSFET datasheet
UT6402 cross reference
UT6402 equivalent finder
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UT6402 replacement
History: IRFR15N20D | R6006KND3 | 2SJ380 | HM4240 | 50N06F | SIHLI520G



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