UT6402 Specs and Replacement
Type Designator: UT6402
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.1 nS
Cossⓘ - Output Capacitance: 102 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
UT6402 substitution
- MOSFET ⓘ Cross-Reference Search
UT6402 datasheet
ut6402.pdf
UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE 3 1 DESCRIPTION 2 SOT-23 The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching 4 speed, low on-resistance, excellent thermal and electrical 5 capabilities, operation with low gate voltages. 6 This device is suitable for use as a load swit... See More ⇒
ut6401.pdf
UNISONIC TECHNOLOGIES CO., LTD UT6401 Power MOSFET 5A, 30V P-CHANNEL ENHANCEMENT MODE 3 1 DESCRIPTION 2 SOT-23 The UTC UT6401 is P-channel enhancement mode Power (SC-59) MOSFET, designed with high density cell, with fast switching 4 speed, low on-resistance, excellent thermal and electrical 5 capabilities, operation with low gate charge. 6 This device is suitable for u... See More ⇒
Detailed specifications: UT3414, UT3416, UT3418, UT3N01Z, UT4414, UT45N03, UT4800, UT50N03, 75N75, UT75N02, UT8205A, UTD351, UTD410, UTD452, UTM2054, UTM2513, UTN3055
Keywords - UT6402 MOSFET specs
UT6402 cross reference
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UT6402 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FQD5P20TM | FDB24AN06LA0
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