UP2003 MOSFET. Datasheet pdf. Equivalent
Type Designator: UP2003
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 25 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 410 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO-251 TO-252
UP2003 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UP2003 Datasheet (PDF)
up2003.pdf
UNISONIC TECHNOLOGIES CO., LTD UP2003 Power MOSFET 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
bup200d.pdf
BUP 200 DIGBT With Antiparallel DiodePreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diodePin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 200 D 1200V 3.6A TO-220 AB Q67040-A4420-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector
bup200.pdf
BUP 200IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 200 1200V 3.6A TO-220 AB Q67078-A4400-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
