UP2003 Specs and Replacement

Type Designator: UP2003

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-251 TO-252

UP2003 substitution

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UP2003 datasheet

 ..1. Size:219K  utc
 up2003.pdf pdf_icon

UP2003

UNISONIC TECHNOLOGIES CO., LTD UP2003 Power MOSFET 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒

 9.1. Size:325K  siemens
 bup200d.pdf pdf_icon

UP2003

BUP 200 D IGBT With Antiparallel Diode Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 200 D 1200V 3.6A TO-220 AB Q67040-A4420-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector... See More ⇒

 9.2. Size:300K  siemens
 bup200.pdf pdf_icon

UP2003

BUP 200 IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 200 1200V 3.6A TO-220 AB Q67078-A4400-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate... See More ⇒

Detailed specifications: UTD351, UTD410, UTD452, UTM2054, UTM2513, UTN3055, UTP45N02, UTT200N02, IRFB7545, UT2309, UT30P03, UT3310, UT3401, UT3401Z, UT3403, UT3409, UT3443

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