UT3310 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT3310
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 0.5 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 6 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 180 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: TO-251 TO-252
UT3310 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT3310 Datasheet (PDF)
..1. Size:157K utc
ut3310.pdf
ut3310.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3310 Power MOSFET Preliminary P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3310 is a P-channel enhancement mode Power MOSFET. The UTC UT3310 uses advanced technology to provide customers with fast switching, low on-resistance andcost-effectiveness. The UTC UT3310 is generally applied in low voltage and battery power appl
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