UT3310 Datasheet and Replacement
Type Designator: UT3310
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO-251 TO-252
UT3310 substitution
UT3310 Datasheet (PDF)
ut3310.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3310 Power MOSFET Preliminary P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3310 is a P-channel enhancement mode Power MOSFET. The UTC UT3310 uses advanced technology to provide customers with fast switching, low on-resistance andcost-effectiveness. The UTC UT3310 is generally applied in low voltage and battery power appl
Datasheet: UTM2054 , UTM2513 , UTN3055 , UTP45N02 , UTT200N02 , UP2003 , UT2309 , UT30P03 , EMB04N03H , UT3401 , UT3401Z , UT3403 , UT3409 , UT3443 , UT3P01Z , UT4411 , UT4413 .
History: UT2309 | DCCF160M120G1 | P5506NK | IXFH56N30X3 | STB19NB20-1 | FQD17N08LTF | IPL60R2K1C6S
Keywords - UT3310 MOSFET datasheet
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UT3310 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: UT2309 | DCCF160M120G1 | P5506NK | IXFH56N30X3 | STB19NB20-1 | FQD17N08LTF | IPL60R2K1C6S
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