UT3443 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT3443
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.1 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.4 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 32 nS
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: SOT-26
UT3443 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT3443 Datasheet (PDF)
ut3443.pdf
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UNISONIC TECHNOLOGIES CO., LTD UT3443 Preliminary Power MOSFET P-CHANNEL 2.5-V (G-S) MOSFET DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTCs advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate rating. FEATURES * VDS(V)= -20V * ID=-4.5A *RDS(ON)
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