UT3443 Datasheet and Replacement
Type Designator: UT3443
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 32 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT-26
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UT3443 Datasheet (PDF)
ut3443.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3443 Preliminary Power MOSFET P-CHANNEL 2.5-V (G-S) MOSFET DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTCs advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate rating. FEATURES * VDS(V)= -20V * ID=-4.5A *RDS(ON)
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - UT3443 MOSFET datasheet
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History: MCH3484 | DMN30H4D0L



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