UT3443 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT3443
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 32 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT-26
UT3443 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT3443 Datasheet (PDF)
ut3443.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3443 Preliminary Power MOSFET P-CHANNEL 2.5-V (G-S) MOSFET DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTCs advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate rating. FEATURES * VDS(V)= -20V * ID=-4.5A *RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDC697P | FDD8447LF085 | SI4953ADY
History: FDC697P | FDD8447LF085 | SI4953ADY
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918