UT5504 Datasheet and Replacement
Type Designator: UT5504
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 131 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO-251 TO-252 SOP-8
UT5504 substitution
UT5504 Datasheet (PDF)
ut5504.pdf

UNISONIC TECHNOLOGIES CO., LTD UT5504 Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT5504 is a P-channel enhancement mode power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTCsadvanced technology. The UTC UT5504 can be used in applications such as D
Datasheet: UTT36P03 , UTT4407 , UTT4425 , UTT4815 , UTT60P03 , BSS84Z , UT30P04 , UT3P06 , IRFB4227 , UT9564 , UTD413 , UTT15P06 , UTT18P06 , UTT20P04 , UTT25P06 , UTT30P04 , UTT30P06 .
History: AP6N6R5LMT-L | SLD80R850SJ | CSD19532Q5B | ME60P06T-G | STY34NB50 | BUK953R2-40E | MMN8822
Keywords - UT5504 MOSFET datasheet
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History: AP6N6R5LMT-L | SLD80R850SJ | CSD19532Q5B | ME60P06T-G | STY34NB50 | BUK953R2-40E | MMN8822



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