UTD413 Specs and Replacement

Type Designator: UTD413

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.2 nS

Cossⓘ - Output Capacitance: 143 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO-251 TO-252

UTD413 substitution

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UTD413 datasheet

 ..1. Size:209K  utc
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UTD413

UNISONIC TECHNOLOGIES CO., LTD UTD413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC s advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package. Standard Product UTD413 is Pb-free. FEATURES * RD... See More ⇒

 9.1. Size:258K  utc
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UTD413

UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE 1 DESCRIPTION SOT-223 The UTD410 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications. FEATURES 1 * VDS=30V, ID=8A TO-252 * RDS(ON) =48m @VGS =10V SYMBOL ORDERING INFORMATI... See More ⇒

Detailed specifications: UTT4425, UTT4815, UTT60P03, BSS84Z, UT30P04, UT3P06, UT5504, UT9564, IRFB4115, UTT15P06, UTT18P06, UTT20P04, UTT25P06, UTT30P04, UTT30P06, UTT40P04, UTT50P04

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs