UTD413 Datasheet and Replacement
Type Designator: UTD413
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12.2 nS
Cossⓘ - Output Capacitance: 143 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO-251 TO-252
UTD413 substitution
UTD413 Datasheet (PDF)
utd413.pdf
UNISONIC TECHNOLOGIES CO., LTD UTD413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD413 can provide excellent RDS(ON) and low gate charge by using UTCs advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package. Standard Product UTD413 is Pb-free. FEATURES * RD
utd410.pdf
UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE 1 DESCRIPTION SOT-223The UTD410 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications. FEATURES 1* VDS=30V, ID=8A TO-252* RDS(ON) =48m @VGS =10V SYMBOL ORDERING INFORMATI
Datasheet: UTT4425 , UTT4815 , UTT60P03 , BSS84Z , UT30P04 , UT3P06 , UT5504 , UT9564 , IRFB4115 , UTT15P06 , UTT18P06 , UTT20P04 , UTT25P06 , UTT30P04 , UTT30P06 , UTT40P04 , UTT50P04 .
History: 2N7002W-TP | 2N7092
Keywords - UTD413 MOSFET datasheet
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UTD413 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: 2N7002W-TP | 2N7092
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