UTT15P06 Specs and Replacement
Type Designator: UTT15P06
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
UTT15P06 substitution
- MOSFET ⓘ Cross-Reference Search
UTT15P06 datasheet
utt15p06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT15P06 Preliminary Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)=90m ... See More ⇒
utt150n03.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC s advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. The UTC UTT150N03 is generally applied in DC to DC convertor, ... See More ⇒
utt150n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT150N06 Preliminary Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT150N06 is generally applied in synchronous Rectification or DC t... See More ⇒
Detailed specifications: UTT4815, UTT60P03, BSS84Z, UT30P04, UT3P06, UT5504, UT9564, UTD413, 2N7000, UTT18P06, UTT20P04, UTT25P06, UTT30P04, UTT30P06, UTT40P04, UTT50P04, UTT50P06
Keywords - UTT15P06 MOSFET specs
UTT15P06 cross reference
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