UTT15P06. Аналоги и основные параметры

Наименование производителя: UTT15P06

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 30 ns

Cossⓘ - Выходная емкость: 115 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm

Тип корпуса: TO-220 TO-251 TO-252

Аналог (замена) для UTT15P06

- подборⓘ MOSFET транзистора по параметрам

 

UTT15P06 даташит

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 utt15p06.pdf pdf_icon

UTT15P06

UNISONIC TECHNOLOGIES CO., LTD UTT15P06 Preliminary Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)=90m

 9.1. Size:182K  utc
 utt150n03.pdf pdf_icon

UTT15P06

UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC s advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. The UTC UTT150N03 is generally applied in DC to DC convertor,

 9.2. Size:190K  utc
 utt150n06.pdf pdf_icon

UTT15P06

UNISONIC TECHNOLOGIES CO., LTD UTT150N06 Preliminary Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT150N06 is generally applied in synchronous Rectification or DC t

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