UP672 MOSFET. Datasheet pdf. Equivalent
Type Designator: UP672
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.7 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: SOT-363
UP672 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UP672 Datasheet (PDF)
up672.pdf
UNISONIC TECHNOLOGIES CO., LTD UP672 Preliminary Power MOSFET N-CHANNEL MOSFET ARRAY FOR SWITCHING 456 DESCRIPTION 3The UTC UP672 includes two MOSFET devices in a SOT-36321package. It achieves high-density mounting and saves mounting SOT-363costs. FEATURES * Automatic mounting supported SYMBOL (3)(6)D2D1(5)(2)G2G1S2S1(4)(1)N-Chann
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918