All MOSFET. UT108N03 Datasheet

 

UT108N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT108N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 107 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 108 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 56 nC
   Rise Time (tr): 102 nS
   Drain-Source Capacitance (Cd): 580 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
   Package: TO-220 TO-251 TO-252

 UT108N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT108N03 Datasheet (PDF)

 ..1. Size:180K  utc
 ut108n03.pdf

UT108N03 UT108N03

UNISONIC TECHNOLOGIES CO., LTD UT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET 1TO-252 DESCRIPTION As advanced N-channel level power MOSFET, the UT108N03 is produced using UTCs advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low 1gate charge for superior switching performance. TO-251 FEATURES * RDS(

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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