UT108N03 Specs and Replacement

Type Designator: UT108N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 108 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 102 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO-220 TO-251 TO-252

UT108N03 substitution

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UT108N03 datasheet

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UT108N03

UNISONIC TECHNOLOGIES CO., LTD UT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET 1 TO-252 DESCRIPTION As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low 1 gate charge for superior switching performance. TO-251 FEATURES * RDS(... See More ⇒

Detailed specifications: UD4809, UF1404, UK1398, UM6K31N, UMBF170, UP672, UT100N03, UT100N03-Q, SPP20N60C3, UT110N03, UT120N03, UT136N03, UT150N04, UT20N03, UT3006, UT3009, UT30N03

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