All MOSFET. UT108N03 Datasheet

 

UT108N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT108N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 108 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 102 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-220 TO-251 TO-252

 UT108N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT108N03 Datasheet (PDF)

 ..1. Size:180K  utc
 ut108n03.pdf

UT108N03 UT108N03

UNISONIC TECHNOLOGIES CO., LTD UT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET 1TO-252 DESCRIPTION As advanced N-channel level power MOSFET, the UT108N03 is produced using UTCs advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low 1gate charge for superior switching performance. TO-251 FEATURES * RDS(

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N6903JANTX

 

 
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