All MOSFET. UT108N03 Datasheet

 

UT108N03 Datasheet and Replacement


   Type Designator: UT108N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 108 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 102 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-220 TO-251 TO-252
 

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UT108N03 Datasheet (PDF)

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UT108N03

UNISONIC TECHNOLOGIES CO., LTD UT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET 1TO-252 DESCRIPTION As advanced N-channel level power MOSFET, the UT108N03 is produced using UTCs advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low 1gate charge for superior switching performance. TO-251 FEATURES * RDS(

Datasheet: UD4809 , UF1404 , UK1398 , UM6K31N , UMBF170 , UP672 , UT100N03 , UT100N03-Q , AON7410 , UT110N03 , UT120N03 , UT136N03 , UT150N04 , UT20N03 , UT3006 , UT3009 , UT30N03 .

History: SM6A12NSU | PSMN013-100PS | PMK35EP | PA110NK | SGSP311 | NTMFS08N003C | RT3U11M

Keywords - UT108N03 MOSFET datasheet

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