UT3009 Datasheet and Replacement
Type Designator: UT3009
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 78 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21.6 nS
Cossⓘ - Output Capacitance: 315 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
Package: TO-252
UT3009 substitution
UT3009 Datasheet (PDF)
ut3009.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3009 Preliminary Power MOSFET 30V, 78A N-CHANNEL FAST SWITCHING POWER MOSFETS DESCRIPTION The UTC UT3009 is an N-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON), low gate charge, ultra high cell density and high switching speed. This UTC UT3009 is suitable for most of the synchr
ut3006.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3006 Power MOSFET 55A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3006 is an N-channel enhancement MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON), cost-effectiveness and high switching speed. This UTC UT3006 is suitable for DC/DC converters, etc. FEATURES * RDS(ON)
Datasheet: UT100N03-Q , UT108N03 , UT110N03 , UT120N03 , UT136N03 , UT150N04 , UT20N03 , UT3006 , IRF530 , UT30N03 , UT3458 , UT3N06 , UT40N03 , UT40N03T , UT40N04 , UT4392 , UT4406 .
History: AP3P9R0H
Keywords - UT3009 MOSFET datasheet
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History: AP3P9R0H



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