All MOSFET. UT3009 Datasheet

 

UT3009 Datasheet and Replacement


   Type Designator: UT3009
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 20.8 nC
   tr ⓘ - Rise Time: 21.6 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: TO-252
 

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UT3009 Datasheet (PDF)

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UT3009

UNISONIC TECHNOLOGIES CO., LTD UT3009 Preliminary Power MOSFET 30V, 78A N-CHANNEL FAST SWITCHING POWER MOSFETS DESCRIPTION The UTC UT3009 is an N-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON), low gate charge, ultra high cell density and high switching speed. This UTC UT3009 is suitable for most of the synchr

 9.1. Size:169K  utc
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UT3009

UNISONIC TECHNOLOGIES CO., LTD UT3006 Power MOSFET 55A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3006 is an N-channel enhancement MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON), cost-effectiveness and high switching speed. This UTC UT3006 is suitable for DC/DC converters, etc. FEATURES * RDS(ON)

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