UT3N06 Specs and Replacement

Type Designator: UT3N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.13 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO-251 TO-252 SOT-23 SOT-89

UT3N06 substitution

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UT3N06 datasheet

 ..1. Size:232K  utc
 ut3n06.pdf pdf_icon

UT3N06

UNISONIC TECHNOLOGIES CO., LTD UT3N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL Drain Gate ... See More ⇒

 0.1. Size:241K  utc
 ut3n06g-ab3-r ut3n06g-ae3-r ut3n06l-tm3-t ut3n06g-tm3-t ut3n06l-tn3-r ut3n06g-tn3-r.pdf pdf_icon

UT3N06

UNISONIC TECHNOLOGIES CO., LTD UT3N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL Drain Gate ... See More ⇒

 0.2. Size:1473K  cn vbsemi
 ut3n06g-ae3.pdf pdf_icon

UT3N06

UT3N06G-AE3 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) ... See More ⇒

 9.1. Size:215K  utc
 ut3n01z.pdf pdf_icon

UT3N06

UNISONIC TECHNOLOGIES CO., LTD UT3N01Z Power MOSFET N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device s general purpose is for switching device applications. FEATURES * RDS(ON) ... See More ⇒

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Detailed specifications: UT120N03, UT136N03, UT150N04, UT20N03, UT3006, UT3009, UT30N03, UT3458, IRF530, UT40N03, UT40N03T, UT40N04, UT4392, UT4406, UT4410, UT4430, UT4446

Keywords - UT3N06 MOSFET specs

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