All MOSFET. UTD484 Datasheet

 

UTD484 Datasheet and Replacement


   Type Designator: UTD484
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17.5 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0121 Ohm
   Package: TO-251 TO-252
 

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UTD484 Datasheet (PDF)

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UTD484

UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 15m @VGS = 10 V * Low capac

Datasheet: UT75N03 , UT85N03 , UT90N03 , UT9971P , UTD408 , UTD420 , UTD436 , UTD454 , IRF2807 , UTF1404 , UTL1426 , UTM3023 , UTT100N05 , UTT108N03 , UTT120N04 , UTT150N03 , UTT200N03 .

History: TPC8062-H | RFD7N10LE | TPC8024-H | NVTFS6H854NL

Keywords - UTD484 MOSFET datasheet

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