UTD484 Specs and Replacement

Type Designator: UTD484

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 142 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0121 Ohm

Package: TO-251 TO-252

UTD484 substitution

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UTD484 datasheet

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 utd484.pdf pdf_icon

UTD484

UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 15m @VGS = 10 V * Low capac... See More ⇒

Detailed specifications: UT75N03, UT85N03, UT90N03, UT9971P, UTD408, UTD420, UTD436, UTD454, STF13NM60N, UTF1404, UTL1426, UTM3023, UTT100N05, UTT108N03, UTT120N04, UTT150N03, UTT200N03

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.