All MOSFET. UT4812 Datasheet

 

UT4812 Datasheet and Replacement


   Type Designator: UT4812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
   Package: SOP-8
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UT4812 Datasheet (PDF)

 ..1. Size:252K  utc
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UT4812

UNISONIC TECHNOLOGIES CO., LTD UT4812 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4812 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. The UT4812 is suitable for using as a load switch or in PWM applications. FEATURES * 30V/6.9A * Low RDS(ON) * Reliable and Rugged SYMBOL (7) (8) (5) (6)Lead-free: UT481

 0.1. Size:147K  utc
ut4812z.pdf pdf_icon

UT4812

UNISONIC TECHNOLOGIES CO., LTD UT4812Z Power MOSFET 30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4812Z can provide excellent RDS(ON) and low gate charge by using advanced trench technology. The UTC UT4812Z is suitable for using as a load switch or in PWMapplications. FEATURES * Low RDS(ON) * Reliable and Rugged * Halogen Free SYMBOL ORDERIN

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History: SI7655ADN | CED05N8 | MC08N005C | AON6794 | G2003 | IRLR024 | BL10N70-A

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