UT4812Z Specs and Replacement
Type Designator: UT4812Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.1 nS
Cossⓘ - Output Capacitance: 102 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
Package: SOP-8
UT4812Z substitution
- MOSFET ⓘ Cross-Reference Search
UT4812Z datasheet
ut4812z.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4812Z Power MOSFET 30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4812Z can provide excellent RDS(ON) and low gate charge by using advanced trench technology. The UTC UT4812Z is suitable for using as a load switch or in PWM applications. FEATURES * Low RDS(ON) * Reliable and Rugged * Halogen Free SYMBOL ORDERIN... See More ⇒
ut4812.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4812 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4812 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. The UT4812 is suitable for using as a load switch or in PWM applications. FEATURES * 30V/6.9A * Low RDS(ON) * Reliable and Rugged SYMBOL (7) (8) (5) (6) Lead-free UT481... See More ⇒
Detailed specifications: 10NN15, 12NN10, 2N7002ZDW, UD9926, UM6K1N, UP9971, UT4232, UT4812, IRF540N, UT4822, UT4957, UT6898, UT7317, UTM4953, RD00HHS1, RD00HVS1, RD01MUS1
Keywords - UT4812Z MOSFET specs
UT4812Z cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: UT6898
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