All MOSFET. RD01MUS1 Datasheet

 

RD01MUS1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RD01MUS1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Package: SOT-89

 RD01MUS1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RD01MUS1 Datasheet (PDF)

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