SIF110N060 Specs and Replacement

Type Designator: SIF110N060

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-220

SIF110N060 substitution

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SIF110N060 datasheet

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SIF110N060

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF110N060 N- MOS / N-CHANNEL POWER MOSFET SIF110N06... See More ⇒

Detailed specifications: RD45HMF1, RD60HUF1, RD70HHF1, RD70HVF1, SIF10N40C, SIF10N60C, SIF10N65C, SIF10N70C, K3569, SIF12N60C, SIF12N65C, SIF13N50C, SIF160N040, SIF18N65C, SIF1N60C, SIF1N65C, SIF2N60C

Keywords - SIF110N060 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs