SIF12N60C Specs and Replacement
Type Designator: SIF12N60C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
SIF12N60C substitution
- MOSFET ⓘ Cross-Reference Search
SIF12N60C datasheet
sif12n60c.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF12N60C N- MOS / N-CHANNEL POWER MOSFET SIF12N60C ... See More ⇒
sif12n65c.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF12N65C N- MOS / N-CHANNEL POWER MOSFET SIF12N65C ... See More ⇒
Detailed specifications: RD60HUF1, RD70HHF1, RD70HVF1, SIF10N40C, SIF10N60C, SIF10N65C, SIF10N70C, SIF110N060, IRFP260, SIF12N65C, SIF13N50C, SIF160N040, SIF18N65C, SIF1N60C, SIF1N65C, SIF2N60C, SIF2N60D
Keywords - SIF12N60C MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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