SIF12N65C Specs and Replacement

Type Designator: SIF12N65C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO-220 TO-220FP

SIF12N65C substitution

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SIF12N65C datasheet

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SIF12N65C

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF12N65C N- MOS / N-CHANNEL POWER MOSFET SIF12N65C ... See More ⇒

 7.1. Size:293K  sisemi
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SIF12N65C

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF12N60C N- MOS / N-CHANNEL POWER MOSFET SIF12N60C ... See More ⇒

Detailed specifications: RD70HHF1, RD70HVF1, SIF10N40C, SIF10N60C, SIF10N65C, SIF10N70C, SIF110N060, SIF12N60C, 4435, SIF13N50C, SIF160N040, SIF18N65C, SIF1N60C, SIF1N65C, SIF2N60C, SIF2N60D, SIF2N65C

Keywords - SIF12N65C MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.