SIF12N65C Datasheet and Replacement
Type Designator: SIF12N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO-220 TO-220FP
SIF12N65C substitution
SIF12N65C Datasheet (PDF)
sif12n65c.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF12N65CN- MOS / N-CHANNEL POWER MOSFET SIF12N65C
sif12n60c.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF12N60CN- MOS / N-CHANNEL POWER MOSFET SIF12N60C
Datasheet: RD70HHF1 , RD70HVF1 , SIF10N40C , SIF10N60C , SIF10N65C , SIF10N70C , SIF110N060 , SIF12N60C , 2SK3568 , SIF13N50C , SIF160N040 , SIF18N65C , SIF1N60C , SIF1N65C , SIF2N60C , SIF2N60D , SIF2N65C .
Keywords - SIF12N65C MOSFET datasheet
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History: SSG4392N | IRHN7450
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