SIF13N50C Specs and Replacement

Type Designator: SIF13N50C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220 TO-220FP

SIF13N50C substitution

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SIF13N50C datasheet

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SIF13N50C

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N- MOS / N-CHA... See More ⇒

Detailed specifications: RD70HVF1, SIF10N40C, SIF10N60C, SIF10N65C, SIF10N70C, SIF110N060, SIF12N60C, SIF12N65C, SPP20N60C3, SIF160N040, SIF18N65C, SIF1N60C, SIF1N65C, SIF2N60C, SIF2N60D, SIF2N65C, SIF2N65D

Keywords - SIF13N50C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.