SIF13N50C Datasheet and Replacement
Type Designator: SIF13N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220 TO-220FP
SIF13N50C substitution
SIF13N50C Datasheet (PDF)
sif13n50c.pdf

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF13N50CN- MOS / N-CHANNEL POWER MOSFET SIF13N50CN- MOS / N-CHA
Datasheet: RD70HVF1 , SIF10N40C , SIF10N60C , SIF10N65C , SIF10N70C , SIF110N060 , SIF12N60C , SIF12N65C , AON7410 , SIF160N040 , SIF18N65C , SIF1N60C , SIF1N65C , SIF2N60C , SIF2N60D , SIF2N65C , SIF2N65D .
History: 4N70 | PR804BA33 | FDMS86263P | SSI65R190S2 | 2SK2318 | NTD12N10T4 | SWU12N70D
Keywords - SIF13N50C MOSFET datasheet
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History: 4N70 | PR804BA33 | FDMS86263P | SSI65R190S2 | 2SK2318 | NTD12N10T4 | SWU12N70D



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