All MOSFET. SIF2N60C Datasheet

 

SIF2N60C MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIF2N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.2 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO-220 TO-220FP TO-251 TO-251S TO-252

 SIF2N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIF2N60C Datasheet (PDF)

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