All MOSFET. SIF2N60D Datasheet

 

SIF2N60D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIF2N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.8 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO-220 TO-220FP TO-251 TO-251S TO-252

 SIF2N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIF2N60D Datasheet (PDF)

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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