All MOSFET. SIF4N60D Datasheet

 

SIF4N60D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIF4N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.3 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-220 TO-220FP TO-262 TO-263 TO-251 TO-251S TO-252

 SIF4N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIF4N60D Datasheet (PDF)

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