SIF4N65C MOSFET. Datasheet pdf. Equivalent

   Type Designator: SIF4N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.8 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220 TO-220S TO-262 TO-263 TO-251 TO-251S TO-252

SIF4N65C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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