SIF80N060 Specs and Replacement

Type Designator: SIF80N060

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 354 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-220

SIF80N060 substitution

- MOSFET ⓘ Cross-Reference Search

 

SIF80N060 datasheet

 ..1. Size:317K  sisemi
 sif80n060.pdf pdf_icon

SIF80N060

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF80N060 N- MOS / N-CHANNEL POWER MOSFET SIF80N060 ... See More ⇒

Detailed specifications: SIF5N65C, SIF6N70C, SIF7N60C, SIF7N60D, SIF7N65C, SIF7N65D, SIF7N70C, SIF7N80C, AO3407, SIF8N50C, 2SK3018S3, 2SK3019C3, 2SK3541Y3, BSS123N3, BSS138C3, BSS84KS3, BSS84N3

Keywords - SIF80N060 MOSFET specs

 SIF80N060 cross reference

 SIF80N060 equivalent finder

 SIF80N060 pdf lookup

 SIF80N060 substitution

 SIF80N060 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.