SIF8N50C Specs and Replacement

Type Designator: SIF8N50C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm

Package: TO-220 TO-220FP

SIF8N50C substitution

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SIF8N50C datasheet

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SIF8N50C

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF8N50C N- MOS / N-CHANNEL POWER MOSFET SIF8N50C N- MOS / N-CHANN... See More ⇒

Detailed specifications: SIF6N70C, SIF7N60C, SIF7N60D, SIF7N65C, SIF7N65D, SIF7N70C, SIF7N80C, SIF80N060, 18N50, 2SK3018S3, 2SK3019C3, 2SK3541Y3, BSS123N3, BSS138C3, BSS84KS3, BSS84N3, BSS84S6R

Keywords - SIF8N50C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.