MTA090P02J3 Specs and Replacement

Type Designator: MTA090P02J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO-252

MTA090P02J3 substitution

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MTA090P02J3 datasheet

 ..1. Size:362K  cystek
 mta090p02j3.pdf pdf_icon

MTA090P02J3

Spec. No. C322J3 Issued Date 2014.03.27 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -20V MTA090P02J3 ID @ VGS=-4.5V -10A RDS(ON)@VGS= -4.5V, ID= -6A 78m (typ) RDS(ON)@VGS= -2.5V, ID= -3A 120m (typ) Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free ... See More ⇒

 8.1. Size:367K  cystek
 mta090n02kc3.pdf pdf_icon

MTA090P02J3

Spec. No. C983C3 CYStech Electronics Corp. Issued Date 2014.11.19 Revised Date Page No. 1/8 20V N-Channel Enhancement Mode MOSFET MTA090N02KC3 BVDSS 20V ID @VGS=4V, TA=25 C 1.4A RDSON@VGS=4V, ID=1A 63m (typ) RDSON@VGS=2.5V,ID=1A 83m (typ) Features RDSON@VGS=1.8V,ID=500mA 160m (typ) Simple drive requirement Small package outline Pb-free lead... See More ⇒

Detailed specifications: BSS84S6R, MBNP2026G6, MBNP2074G6, MEN09N03BJ3, MEP4435Q8, MSFA0M02X8, MTA06N03J3, MTA06N03NJ3, IRFZ46N, MTA17A02CDN6, MTA17A02CDV8, MTA25N02J3, MTA340N02N3, MTA55N02N3, MTA65N15H8, MTA65N20H8, MTA90N03ZN3

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