MTA65N15H8 Specs and Replacement
Type Designator: MTA65N15H8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: DFN5X6
MTA65N15H8 substitution
- MOSFET ⓘ Cross-Reference Search
MTA65N15H8 datasheet
mta65n15h8.pdf
Spec. No. C739H8 Issued Date 2014.02.11 CYStech Electronics Corp. Revised Date Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTA65N15H8 ID @VGS=10V 20A 60m VGS=10V, ID=15A 59m RDSON(TYP) VGS=5V, ID=10A 60m VGS=3V, ID=3A Description The MTA65N15H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combinati... See More ⇒
mta65n20h8.pdf
Spec. No. C866H8 Issued Date 2014.02.10 CYStech Electronics Corp. Revised Date Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTA65N20H8 ID @VGS=10V 24A 74m VGS=10V, ID=11A RDSON(TYP) 74m VGS=5V, ID=5A Description The MTA65N20H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, r... See More ⇒
Detailed specifications: MTA06N03J3, MTA06N03NJ3, MTA090P02J3, MTA17A02CDN6, MTA17A02CDV8, MTA25N02J3, MTA340N02N3, MTA55N02N3, K2611, MTA65N20H8, MTA90N03ZN3, MTB02N03H8, MTB02N03J3, MTB02N03Q8, MTB030N04N3, MTB032P06V8, MTB03N03H8
Keywords - MTA65N15H8 MOSFET specs
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