MTA65N15H8 Datasheet and Replacement
Type Designator: MTA65N15H8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: DFN5X6
MTA65N15H8 substitution
MTA65N15H8 Datasheet (PDF)
mta65n15h8.pdf

Spec. No. : C739H8 Issued Date : 2014.02.11 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 150VMTA65N15H8ID @VGS=10V 20A60m VGS=10V, ID=15A 59m RDSON(TYP) VGS=5V, ID=10A 60m VGS=3V, ID=3A Description The MTA65N15H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combinati
mta65n20h8.pdf

Spec. No. : C866H8 Issued Date : 2014.02.10 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTA65N20H8ID @VGS=10V 24A74m VGS=10V, ID=11A RDSON(TYP) 74m VGS=5V, ID=5A Description The MTA65N20H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, r
Datasheet: MTA06N03J3 , MTA06N03NJ3 , MTA090P02J3 , MTA17A02CDN6 , MTA17A02CDV8 , MTA25N02J3 , MTA340N02N3 , MTA55N02N3 , IRF9640 , MTA65N20H8 , MTA90N03ZN3 , MTB02N03H8 , MTB02N03J3 , MTB02N03Q8 , MTB030N04N3 , MTB032P06V8 , MTB03N03H8 .
History: IPI057N08N3G | 1H10 | IPD65R600E6 | SPA22N65G | SMK1820FJ | KIA6N70H-220F | HSM3206
Keywords - MTA65N15H8 MOSFET datasheet
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History: IPI057N08N3G | 1H10 | IPD65R600E6 | SPA22N65G | SMK1820FJ | KIA6N70H-220F | HSM3206



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