MTB032P06V8 MOSFET PDF: P-Ch, 60V, 25A. Datasheet. Full specification with pinout and replacement list

MTB032P06V8 Specs and Replacement

   Type Designator: MTB032P06V8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 109 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: DFN3X3

MTB032P06V8 substitution

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MTB032P06V8 datasheet

..1. Size:655K cystek
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Spec. No. C924V8 Issued Date 2013.06.06 CYStech Electronics Corp. Revised Date 2014.08.11 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTB032P06V8 ID -25A RDSON@VGS=10V, ID=-6A 29m (typ) RDSON@VGS=-4.5V, ID=-4A 33m (typ) Description The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of ... See More ⇒

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Spec. No. C884N3 Issued Date 2014.08.20 CYStech Electronics Corp. Revised Date Page No. 1/ 9 40V N-Channel Enhancement Mode MOSFET BVDSS 40V MTB030N04N3 ID @VGS=10V 8A VGS=10V, ID=7.9A 25.3m RDSON(TYP) VGS=4.5V, ID=7.3A 34.2m Features Low on-resistance Low voltage gate drive Excellent thermal and electrical capabilities Pb-free l... See More ⇒

9.2. Size:477K cystek
mtb030n10rq8.pdf pdf_icon

Spec. No. C053Q8 Issued Date 2016.11.04 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTB030N10RQ8 BVDSS 100V ID @ TA=25 C, VGS=10V 6.2A RDS(ON)@VGS=10V, ID=10A 22.7 m (typ) Features RDS(ON)@VGS=4.5V, ID=8A 27.5 m (typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Rep... See More ⇒

9.3. Size:221K cystek
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Spec. No. C788H8 Issued Date 2010.09.23 CYStech Electronics Corp. Revised Date 2010.10.06 Page No. 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB03N03H8 ID 75A RDSON(max) 3m Description The MTB03N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r... See More ⇒

Detailed specifications: MTA55N02N3 , MTA65N15H8 , MTA65N20H8 , MTA90N03ZN3 , MTB02N03H8 , MTB02N03J3 , MTB02N03Q8 , MTB030N04N3 , IRFP064N , MTB03N03H8 , MTB04N03AQ8 , MTB04N03E3 , MTB04N03H8 , MTB04N03J3 , MTB04N03Q8 , MTB050N15J3 , MTB050P10E3 .