All MOSFET. MTB032P06V8 Datasheet

 

MTB032P06V8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB032P06V8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 109 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: DFN3X3

 MTB032P06V8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB032P06V8 Datasheet (PDF)

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 mtb032p06v8.pdf

MTB032P06V8 MTB032P06V8

Spec. No. : C924V8 Issued Date : 2013.06.06 CYStech Electronics Corp. Revised Date : 2014.08.11 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTB032P06V8 ID -25A RDSON@VGS=10V, ID=-6A 29m(typ) RDSON@VGS=-4.5V, ID=-4A 33m(typ) Description The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

 9.1. Size:625K  cystek
 mtb030n04n3.pdf

MTB032P06V8 MTB032P06V8

Spec. No. : C884N3 Issued Date : 2014.08.20 CYStech Electronics Corp. Revised Date : Page No. : 1/ 9 40V N-Channel Enhancement Mode MOSFET BVDSS 40V MTB030N04N3 ID @VGS=10V 8A VGS=10V, ID=7.9A 25.3m RDSON(TYP) VGS=4.5V, ID=7.3A 34.2m Features Low on-resistance Low voltage gate drive Excellent thermal and electrical capabilities Pb-free l

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 mtb030n10rq8.pdf

MTB032P06V8 MTB032P06V8

Spec. No. : C053Q8 Issued Date : 2016.11.04 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB030N10RQ8 BVDSS 100VID @ TA=25C, VGS=10V 6.2A RDS(ON)@VGS=10V, ID=10A 22.7 m(typ)Features RDS(ON)@VGS=4.5V, ID=8A 27.5 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Rep

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 mtb03n03h8.pdf

MTB032P06V8 MTB032P06V8

Spec. No. : C788H8 Issued Date : 2010.09.23 CYStech Electronics Corp.Revised Date : 2010.10.06 Page No. : 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB03N03H8ID 75ARDSON(max) 3m Description The MTB03N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SRT15N090HTC

 

 
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