MTB04N03E3 Specs and Replacement

Type Designator: MTB04N03E3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 115 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 432 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO-220AB

MTB04N03E3 substitution

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MTB04N03E3 datasheet

 ..1. Size:297K  cystek
 mtb04n03e3.pdf pdf_icon

MTB04N03E3

Spec. No. C889E3 Issued Date 2013.02.20 CYStech Electronics Corp. Revised Date 2013.02.26 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB04N03E3 ID 115A 3.8m VGS=10V, ID=30A RDSON(TYP) 6.1m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating... See More ⇒

 6.1. Size:338K  cystek
 mtb04n03j3.pdf pdf_icon

MTB04N03E3

Spec. No. C789J3 Issued Date 2011.12.12 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB04N03J3 ID 75A RDS(ON)@VGS=10V, ID=30A 3.1m (typ) RDS(ON)@VGS=4.5V, ID=24A 4.7m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free l... See More ⇒

 6.2. Size:318K  cystek
 mtb04n03aq8.pdf pdf_icon

MTB04N03E3

Spec. No. C889Q8 Issued Date 2013.12.02 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB04N03AQ8 ID @VGS=10V 20A RDSON@VGS=10V, ID=18A 4.4m (typ) RDSON@VGS=4.5V, ID=12A 5.8m (typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt... See More ⇒

 6.3. Size:310K  cystek
 mtb04n03q8.pdf pdf_icon

MTB04N03E3

Spec. No. C789Q8 Issued Date 2011.12.16 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB04N03Q8 ID 25A RDSON@VGS=10V, ID=18A 3.5m (typ) RDSON@VGS=4.5V, ID=12A 4.8m (typ) Description The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s... See More ⇒

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Detailed specifications: MTA90N03ZN3, MTB02N03H8, MTB02N03J3, MTB02N03Q8, MTB030N04N3, MTB032P06V8, MTB03N03H8, MTB04N03AQ8, IRFZ44N, MTB04N03H8, MTB04N03J3, MTB04N03Q8, MTB050N15J3, MTB050P10E3, MTB050P10F3, MTB05N03HQ8, MTB060N06I3

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